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    MGFK35V4045

    Abstract: FS21
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGFK35V4045 MGFK35V4045 S22vs. 1200mA) FS21

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 . 0 ~ 14.5 G H z-band amplifiers. T he herm etically sealed m etal-ceram ic


    OCR Scan     		PDF GFK35V4045 17add 1200mA)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5


    OCR Scan     		PDF GFK35V4045 MGFK35V4045