MOTOROLA SEMICONDUCTOR AN1542
Abstract: IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet AC INRUSH CURRENT LIMITER DSA0035015 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must
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AN1542/D
AN1542
AN1542/D*
MOTOROLA SEMICONDUCTOR AN1542
IGD 507 an
MOTOROLA smd SCR
AN1542
SMPS INRUSH CURRENT LIMITER
ntc thermistors for inrush current limiting
smps using SCR& mosfet
AC INRUSH CURRENT LIMITER
DSA0035015
Nippon capacitors
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IGD 507 an
Abstract: MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must
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AN1542/D
AN1542
AN1542/D*
IGD 507 an
MOTOROLA SEMICONDUCTOR AN1542
pmos Vt
AN1542
Nippon capacitors
diode gfm
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bfm 2 TERMINAL DIODE
Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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scr power control schematic
Abstract: EL 4N25 4n25 application note AN26-1 BYT11-1000 IGBT DRIVER application note AN-556 TN197 BYT11-1000 equivalent IGBT DRIVER SCHEMATIC chip
Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface
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AN556
L6353:
L6353
scr power control schematic
EL 4N25
4n25 application note
AN26-1
BYT11-1000
IGBT DRIVER application note
AN-556
TN197
BYT11-1000 equivalent
IGBT DRIVER SCHEMATIC chip
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AN-556
Abstract: 4N25 AN556 BYT11-1000 BZX85C20 L6353 STW20NA50
Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface
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AN556
L6353:
L6353
AN-556
4N25
AN556
BYT11-1000
BZX85C20
STW20NA50
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AN-556
Abstract: AN556 application note 100uf25v scr power control schematic TN197 L6353 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25
Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface
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AN556
L6353:
L6353
AN-556
AN556 application note
100uf25v
scr power control schematic
TN197
BRIDGE-RECTIFIER 8a
IGBT DRIVER SCHEMATIC chip
SCR Inverter datasheet
4N25
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Diode GFK
Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
Diode GFK
GFX DIODE
BJE 80 diode
Diode BFM
bfm 2 TERMINAL DIODE
GGT DIODE
Diode GEG
Diode GFK 42
bem diode
GEZ DIODES
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GEK DIODES
Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
GEK DIODES
Diode GFK
Diode BFX 514
GEZ DIODES
BDP 282
DIODE BFM
DIODE BFT marking code
GGP DIODE
MARKING GEK
GFX DIODE
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GFM, TVS
Abstract: GHR TVS marking ghm 1.5SMCJ Series marking GEY marking GFQ marking BGG tvs TVS GGV bfu 450 c BFU 450
Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 1500 Watt Specifications - 1.5SMCJ Series Electrical Characteristics Part Number* 1.5SMCJ5.0 1.5SMCJ5.0A 1.5SMCJ6.0
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5SMCJ10
5SMCJ10A
5SMCJ11
5SMCJ11A
5SMCJ12
5SMCJ12A
5SMCJ13
5SMCJ13A
5SMCJ14
5SMCJ14A
GFM, TVS
GHR TVS
marking ghm
1.5SMCJ Series
marking GEY
marking GFQ
marking BGG tvs
TVS GGV
bfu 450 c
BFU 450
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marking code BFK
Abstract: GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
marking code BFK
GFX DIODE
Diode GFK
DIODE BJE
gfp 35
GFM 78
GGT DIODE ON
on 440 gex diode
BFR 30 transistor
GFK 77
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BEZ DIODES
Abstract: marking GFQ marking Bdy
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
BEZ DIODES
marking GFQ
marking Bdy
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GEZ DIODES
Abstract: GEZ 63 DIODES GEZ 304 DIODES
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
DO214AB
UL94V-0
5SMCJ160
5SMCJ160A
5SMCJ170
5SMCJ170A
GEZ DIODES
GEZ 63 DIODES
GEZ 304 DIODES
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GEZ DIODES
Abstract: bgy 44
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
DO214AB
UL94V-0
MIL-STD-750
GEZ DIODES
bgy 44
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Diode GFK
Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
Diode GFK
DIODE BFT marking code
GFX DIODE
GEZ DIODE
Diode GFK 48
general semiconductor marking code GFX
BFM General Semiconductor
diode smc bfk
GGR diode
GGP 16 DIODE
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diode gfm
Abstract: GFm DIODE GFM 66 GFM 250 diode gfm 2 ED42 AGE SCR scr 209
Text: ED42_ _25 ED47 25 m °owerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/DlOde Isolated POW-R-BLOK Module 250 Amperes/600-1600 Volts ED42_ _25, ED47_ _25 SCR/Diode Isolated POW-R-BLOK™ Module 250 Amperes/600-1600 Volts
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Amperes/600-1600
ED421625
diode gfm
GFm DIODE
GFM 66
GFM 250
diode gfm 2
ED42
AGE SCR
scr 209
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GFM 75A
Abstract: diode gfm 2 GFM 74 A diode gfm GFm DIODE
Text: POWEREX INC ISE D 72T4bai DQQ3S47 5 • 'r ~ '2 5 '~ Z 3 CE420460 CE420860 m Ê Ê B Œ X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Three-Phase
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72T4bai
DQQ3S47
CE420460
CE420860
BP107,
peres/400-800
CE420460,
CE420860
Amperes/400-800
GFM 75A
diode gfm 2
GFM 74 A
diode gfm
GFm DIODE
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MCR1907-1
Abstract: MCR1907-6
Text: MCR1907-1 th ru MCR1907-6 SILICON M A X IM U M R A T IN G S <Tj = 125*C unless otherwise noted) Rating Symbol P eak R e v e rs e Blocking Voltage* MCR1907-1 -2 -3 -4 -5 -6 VROM (rep)* P eak R e v e rse Blocking V oltage (N on-R ecurrent 5 m s (max.) MCK1907-1
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MCR1907-6
MCR1907-1
MCR1907-6
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GFM 74 A
Abstract: No abstract text available
Text: POQJEREX m Ê / ISE INC B W D m 7 5 ^ 5 1 00Q3SM3 & U CE420430 CE420830 K Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Three-Phase SCR/Diode
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OCR Scan
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00Q3SM3
CE420430
CE420830
BP107,
Amperes/400-800
CE420430,
CE420830
BP107
GFM 74 A
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ana 608 LED
Abstract: dl304 DL-304 diode gfm ANA 608 CR02A
Text: POülEREX INC isE m m tE x i> • 7 5 cm b s i o o o 3 t m ñ ■ C D L3 Powerex, Inc., Hlllis Street, Youngwaod, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 T~ 4-l-C > 5 40 Tentative
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BP107,
Amperes/100-1400
MAX/10
ana 608 LED
dl304
DL-304
diode gfm
ANA 608
CR02A
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GTO thyristor
Abstract: powerex gate turn-off gto powerex gate turn-off 10A fast Gate Turn-off Thyristor GDM21030 GDM21230 DM20830 GTO triac GTO thyristor powerex THYRISTOR GTO
Text: POWEREX m M E I NC H 1SE E X D • 7£T4b21 _ 0QQ3hfll 1 GDM2 30 Tentative Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Gate Turn-Off (GTO) Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15
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BP107,
Amperes/800-1200
MAX/10
GTO thyristor
powerex gate turn-off gto
powerex gate turn-off
10A fast Gate Turn-off Thyristor
GDM21030
GDM21230
DM20830
GTO triac
GTO thyristor powerex
THYRISTOR GTO
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GFM 15A
Abstract: GTO thyristor GTO thyristor powerex 100A gate turn-off thyristor GDM21210 thyristor cp 04 95 thyristor TT 36 N GDM11210 powerex gate turn-off gto THYRISTOR GTO
Text: POQJEREX INC wuiBtex 1SE D m TEmhSI OQOHfc.b'l fi • GDM11210 GDM21210 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Gate Turn-Off (GTO) Thyristor Modules
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GDM11210
GDM21210
BP107,
Amperes/1200
GDM11210,
GDM21210
MAX/10
GFM 15A
GTO thyristor
GTO thyristor powerex
100A gate turn-off thyristor
thyristor cp 04 95
thyristor TT 36 N
powerex gate turn-off gto
THYRISTOR GTO
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Untitled
Abstract: No abstract text available
Text: T/lzZ7 INTERNATIONAL SEniCOND 4 TE TD0D37B D00D0S3 1^3 • I S E M ]> CRD International Semiconductor, Inc. E C O N O M Y LIN E DO-35 & M E L F CURRENT REGULATOR DIODES A C R D is a diode which supplies constant current to an electronic circuit, even when power supply voltage fluctuations or load impedance fluctuations occur.
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TD0D37B
D00D0S3
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Untitled
Abstract: No abstract text available
Text: POWEREX I NC 1SE D • 7BTMLB1 0 D G 3S 5 3 2 ■ T - 2 .5 ' ^ 2 3 r<M/EREX C C 42 C N 47 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode Center Tap
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BP107,
Amperes/400-1400
MAX/10
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powerex cd
Abstract: powerex nd diode gfm
Text: POWEREX INC 1SE D • 75=141,21 GOG34T1 4 ■ m Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 -7 c d l 2 40 CDL7 40 Tentative SCR/Diode Light-Triggered
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GOG34T1
BP107,
Amperes/100-1400
MAX/10
powerex cd
powerex nd
diode gfm
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