GGMD333 Search Results

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Text: SSP1N50A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V DS = 500V ■ Lower RDS(0N) : 4.046 ^ (Typ.)