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    GL 3201 Search Results

    GL 3201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    132-01L Coilcraft Inc General Purpose Inductor, 0.014uH, 5%, 1 Element, 3823, ROHS COMPLIANT Visit Coilcraft Inc
    132-01LT Coilcraft Inc RF inductor, molded, 5% tol, RoHS Visit Coilcraft Inc
    UPD703201YGC-XXX-YEU-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    5962-9223201MRA Renesas Electronics Corporation NON-INV OCT/BFR LNE/DRVR Visit Renesas Electronics Corporation
    UPD703201GC-XXX-YEU-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
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    GL 3201 Price and Stock

    Carling Technologies LT-1511-632-012

    Toggle Switches LT-1511-632-012
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    Mouser Electronics LT-1511-632-012
    • 1 $21.36
    • 10 $18.59
    • 100 $17.63
    • 1000 $17.17
    • 10000 $17.17
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    GL 3201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fototransistor BPW 39

    Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
    Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.


    Original     		PDF EN60825-1 GETY6091 GPLY6899 GPLY6880 fototransistor BPW 39 fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor

    ABB DC Main Circuit breaker 2POLE

    Abstract: IEC-157-1 wiring diagram of rccb ABB STOTZ-KONTAKT S 212 abb timer stt 11 51841 stotz s 212 IEC 60947-2 ABB SZ-ESK abb s210
    Text: Technical Data System pro M Industrial Miniature Circuit-Breakers S 220 series System pro M 1 System pro M When connecting aluminum conductors, ensure that the contact surfaces of the conductors are cleaned, brushed and greased. For finely stranded conductors,


    Original     		PDF Form00 D0201 ABB DC Main Circuit breaker 2POLE IEC-157-1 wiring diagram of rccb ABB STOTZ-KONTAKT S 212 abb timer stt 11 51841 stotz s 212 IEC 60947-2 ABB SZ-ESK abb s210

    Untitled

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030E PB03-170RFPP PB03-091RFPP)

    178rf

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E PB03-178RFPP 178rf

    AGERE

    Abstract: AGR18125E AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
    Text: Product Brief November 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E PB04-012RFPP PB03-178RFPP) AGERE AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A

    AGR18125EF

    Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
    Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E PB04-078RFPP PB04-012RFPP) AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A

    "RF Power Amplifier"

    Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A
    Text: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030E AGR18030E PB04-077RFPP PB04-077RFPP) "RF Power Amplifier" AGERE AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A

    Untitled

    Abstract: No abstract text available
    Text: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030E T10-12, PB04-011RFPP PB03-170RFPP)

    AGR18060EF

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


    Original     		PDF AGR18060E PB03-171RFPP PB03-105RFPP) AGR18060EF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E a712-4106) PB03-178RFPP

    gl 3201

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


    Original     		PDF AGR18090E PB03-172RFPP PB03-090RFPP) gl 3201

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al

    100B120JW500X

    Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
    Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-068RFPP DS04-064RFPP) 100B120JW500X grm40x7r103k100al 100B470JW500X 100B100JW500X

    agere c8 c1

    Abstract: 100b8r2jw 100B6R8JW
    Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW

    J118 MOSFET

    Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J
    Text: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 AGR09085E incorporati2-4106) DS01-209RFPP J118 MOSFET j122 mosfet AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 delivering10-12, DS04-055RFPP DS04-028RFPP)

    Untitled

    Abstract: No abstract text available
    Text: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 ca1212 DS04-028RFPP DS03-057RFPP)

    Untitled

    Abstract: No abstract text available
    Text: IIC Connectors Ib IBULGIN EN60 320-1 Standard Sheet C8 Class II Cold Condition Flange Panel Mount Inlet 15.5 Figure of Eight 2.8m m Solder Tabs Connectors 2.5A, 250V a.c. Snap Fit to Panel Inlet Figure of Eight 15.5 Fits Panel sizes 1, 1.5 or 2mm 21.3 23.70


    OCR Scan     		PDF PX0784/28 PX0785/28 PX0786/PC

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Octal registered transceiver; 3-state; inverting FEATURES • • • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. CMOS low power consumption Direct Interface with TTL levels


    OCR Scan     		PDF 74LVC640 74LVC533

    marking code SOT23 SSi

    Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23
    Text: i Thaïï HEW LETT mLfiM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features • High Perform ance Bipolar T ransistor Optimized for Low Current, Low Voltage O peration • 900 MHz Performance:


    OCR Scan     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 OT-143 AT-32011) OT-23 AT-32033) marking code SOT23 SSi AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23

    TL0251

    Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
    Text: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5


    OCR Scan     		PDF LD-105VR LD-404VR 10x10 LD-602VR LD-603VR LD-701VR LD-702VR LD-706VR 13x18 LD1203VR TL0251 hp 3101 LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR

    MRF942

    Abstract: NF50
    Text: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features


    OCR Scan     		PDF MRF942/D MRF942 C68593 MRF942 NF50

    PBT-GF20

    Abstract: PBT-GF20 CONNECTOR PBT-GF20 2.2 PBT-GF30 PBT-QF30 pbtgf20 PBT-GF-20 molex CT Connector SD-64320-001 SD-98993-008
    Text: 1-FOR LLUSTRATIGN PURPOSE TtC FEMALE HOUSMG SHOWN B THE ROOT WFE OUTPUT VERSION COONi 1 2-APPPUCATDN SPECFCATKM AS-64319-001 3-WRES EXTERNAL DlAfCTER USED: FOR CPO* TERtWAL USE WRES WITH AN EXTERNAL DWETER BETWEEN *125MM FOR CPIS TERMNAh USE WRES WITH AN EXTERNAL DIAIETER BETWEEN «U O ffl


    OCR Scan     		PDF PBT-GF20Â PBT-QF30< AS-64319-001 SD-98993-008 PBT-GF20 PBT-GF20 CONNECTOR PBT-GF20 2.2 PBT-GF30 PBT-QF30 pbtgf20 PBT-GF-20 molex CT Connector SD-64320-001 SD-98993-008