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    GL480 Price and Stock

    Sharp Microelectronics of the Americas GL480

    EMITTER IR 950NM 50MA RADIAL
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    Sharp Microelectronics of the Americas GL4800

    EMITTER IR 950NM 50MA RADIAL
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    DigiKey GL4800 Tube 2,000
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    Sharp Microelectronics of the Americas GL4800E0000F

    EMITTER IR 950NM 50MA RADIAL
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    Newark GL4800E0000F Bulk 8,900 1
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    Avnet Silica GL4800E0000F 4,000 27 Weeks 1,000
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    New Advantage Corporation GL4800E0000F 18,000 1
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    Sharp Microelectronics of the Americas GL480QE0000F

    EMITTER IR 950NM 50MA RADIAL
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    Socle Technology Corporation GL480E00000F

    EMITTER IR 950NM 50MA RADIAL
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    DigiKey GL480E00000F Bag 80,000
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    Find more GL480 price and stock on Findchips.com

    GL480 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GL480 Sharp Infrared Emitting Diode Original PDF
    GL480 Sharp Infrared Emitting Diode Original PDF
    GL480 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    GL4800 Sharp Diode Thin Type Infrared Emitting Original PDF
    GL4800 Sharp Thin Type Infrared Emitting Diode Original PDF
    GL4800 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    GL4800E0000F Sharp Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 950NM 3.0MW TH Original PDF
    GL480E00000F Sharp Through hole IRED, ??13??, 0.7mW 950 nm, Bulk Original PDF
    GL480E00000F Sharp Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 950NM 3.0MW TH Original PDF
    GL480Q Sharp Infrared Emitting Diode Original PDF
    GL480Q Sharp Infrared Emitting Diode Original PDF
    GL480QE0000F Sharp Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 950NM .7MW T/H Original PDF
    GL480QE0000F Sharp Hi rel version of GL480 Original PDF

    GL480 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GL4800

    Abstract: PT4800
    Text: GL4800 GL4800 Thin Type Infrared Emitting Diode • Features ■ Outline Dimensions 1.5 ± 0.2 1.6 0.8 3.5 ± 0.2 1.7 MIN.0.5 2 - 0.9 Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature


    Original     		PDF GL4800 GL4800 PT4800

    gl480e00000f

    Abstract: GL480QE0000F alcohol sensor data sheet
    Text: GL480E00000F GL480E00000F Infrared Emitting Diode • Features ■ Agency Approvals/Compliance 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle Δθ: ±13° TYP. Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN.


    Original     		PDF GL480E00000F 2002/95/EC) D1-A01101EN gl480e00000f GL480QE0000F alcohol sensor data sheet

    T70a

    Abstract: GL483Q PT480
    Text: GL480/GL480Q/GL483Q GL480/GL480Q GM3Q • Features Infrared Emitting Diode ¤~mensions 1. Narrow beam angle AO:TYP. +13 2. Radiant flux (me : MIN. 0.7mW at 1,= 20mA) 3. Compact, high reliability by chip coating (GL 480Q/GL483Q) 4. Long lead type (GL483Q)


    Original     		PDF GL480/GL480Q/GL483Q GL480/GL480Q 480Q/GL483Q) GL483Q) GL480Q/GL483Q) PT480) GL4801GL480QIGL483Q T70a GL483Q PT480

    PT4600

    Abstract: GL460 GL4600 GL4610 GL480
    Text: GL4600/GL4610 GL4600/GL4610 Double Ended Mold Type Infrared Emitting Diode • Features ■ Outline Dimensions 1. Compact double ended mold package Packaging area : 37% smaller than GL480 2.7 MAX. 0.7 2 1.8 2 * 1 Mark 14.0 MIN. 2. Narrow beam angle (Half intensity angle : ± 13˚ )


    Original     		PDF GL4600/GL4610 GL480) GL460) GL4610) GL4600 PT4600) PT4600 GL460 GL4610 GL480

    PT480

    Abstract: GL480 GL480Q GL483Q
    Text: GL480/GL480Q/GL483Q Infrared Emitting Diode • Features ■ Outline Dimensions 1. Narrow beam angle ∆θ : TYP. ± 13˚ 2. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 3. Compact, high reliability by chip coating ( GL480Q/GL483Q ) 4. Long lead type ( GL483Q )


    Original     		PDF GL480/GL480Q/GL483Q GL480Q/GL483Q GL483Q GL480/GL480Q GL480 GL480Q PT480 GL480 GL480Q GL483Q

    GL460

    Abstract: GL461 GL461T GL480 PT460
    Text: GL4601GL461 GL460/GL461 hU* Ended Mold • Features ,~Dimensions TYW Infrared Emiing Diode Unit : m m 1. Small double-end type package (packaging area: 37% smaller than GL480) 2. High output power type (GL461 ) 3. Taped models 2,000 pcs/reel GL461T) ■ A-1. Floppy disk drives


    Original     		PDF GL4601GL461 GL460/GL461 GL480) GL461 GL461T) GL460T/GL461T) GL460 GL461 GL461T GL480 PT460

    GL460

    Abstract: GL460T GL461 GL461T GL480 PT460
    Text: GL460/GL461 GL460/GL461 Double Ended Mold Type Infrared Emitting Diode • Features ■ Outline Dimensions 1. Small double-end type package packaging area : 37% smaller than GL480 2. High output power type ( GL461 ) 3. Taped models 2,000pcs/reel ( GL460T /


    Original     		PDF GL460/GL461 GL480 GL461 000pcs/reel GL460T GL461T GL460 GL461 GL461T GL480 PT460

    PT4800

    Abstract: GL4800
    Text: GL4800 GL4800 Thin Type Infrared Emitting Diode • Features ■ Outline Dimensions 1.5 ± 0.2 1.6 0.8 3.5 ± 0.2 1.7 MIN.0.5 2 - 0.9 Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature


    Original     		PDF GL4800 PT4800 PT4800 GL4800

    GL4800

    Abstract: PT4800
    Text: GL4800 GL4800 Thin Type Infrared Emitting Diode • Features ■ Outline Dimensions 1.6 0.8 1.0 3.5 ± 0.2 1.7 MIN.0.5 2 - 0.9 2 2 0.25 2.54 1 Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature


    Original     		PDF GL4800 GL4800 PT4800

    GL4800

    Abstract: WE100 AK 1020
    Text: GL4800 GL4800 Thin Type Infrared Emiing Features Thin type Thickness : 1.5mm Beam angle (A19 : TYP. &3~) Radiant flux (Q, : MIN. 0.7mW at I,=20mA) 4. Epoxy resin package ¤~Dinle~ Diode 9 1. 2. 3. (Unit . mm) ,5*0.2 h 0.8 Pink transparent ewxy resin ,<–. — — . . —


    Original     		PDF GL4800 GL4800 WE100 AK 1020

    ultrasonic distance circuit design

    Abstract: 2 MHz ultrasonic sensor distance measure ultrasonic GL4800 GL4800E0000F PT4800
    Text: GL4800E0000F GL4800E0000F Infrared Emitting Diode • Features ■ Agency Approvals/Compliance 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle Δθ: ±30° TYP. Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN.


    Original     		PDF GL4800E0000F 2002/95/EC) D1-A01001EN ultrasonic distance circuit design 2 MHz ultrasonic sensor distance measure ultrasonic GL4800 GL4800E0000F PT4800

    GL480

    Abstract: GL480Q GL483Q PT480
    Text: GL480/GL480Q/GL483Q Infrared Emitting Diode • Features ■ Outline Dimensions 1. Narrow beam angle ∆θ : TYP. ± 13˚ 2. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 3. Compact, high reliability by chip coating ( GL480Q/GL483Q ) 4. Long lead type ( GL483Q )


    Original     		PDF GL480/GL480Q/GL483Q GL480Q/GL483Q GL483Q GL480/GL480Q GL480 GL480Q GL480 GL480Q GL483Q PT480

    PC925LE

    Abstract: GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS PC357NJ0000F
    Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,


    Original     		PDF PC357NJ0000F PC451J00000F PC364NJ0000F PC355NJ0000F PC452J00000F PC367NJ0000F PC354NJ0000F PC365NJ0000F GP1UF31xXP0F: GP1UF31xYP0F: PC925LE GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS

    Laser Diode 405 nm Sharp

    Abstract: LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series
    Text: Electronic Components http://sharp-world.com/products/device/ March 2015 2015-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs 6 CMOS Camera Modules Road Map. 6


    Original     		PDF HT9A23E Laser Diode 405 nm Sharp LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series

    TSHA3400

    Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
    Text: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538


    OCR Scan     		PDF SEP8505/8525 SEP8506/8526 SEP8405/8425 SEP8406/8426 SEP8403 HOA708 HOA0860 HOA0870 LTR-209 LTR-301 TSHA3400 "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A

    Untitled

    Abstract: No abstract text available
    Text: SHARP GL480/GL480Q/GL483Q GL480/GL480Q GL483Q Infrared Emitting Diode • Features ■ O utlne Dimensions Unit : mm 1. Narrow beam angle (A6 \ T Y P . ±13°) 2. Radiant flux (3>e : MIN. 0.7mW at Ik= 20mA) 3. Compact, high reliability by chip coating (GL4800/GL483Q)


    OCR Scan     		PDF GL480/GL480Q/GL483Q GL480/GL480Q GL483Q GL4800/GL483Q) GL483Q) L480Q/GL483Q PT480) GL480Q/GL483Q) GL480)

    Untitled

    Abstract: No abstract text available
    Text: GL4200 SHARP GL4200 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions U n it: m m 1. Compact flat package (Volume : 2/3 max. of GL480) 3 .0 2- 2. Wide beam angle C O .5 1 to con O ö i1)2 < Î r5 CT) ■ Applications


    OCR Scan     		PDF GL4200 GL480)

    PT4800

    Abstract: No abstract text available
    Text: SHARI3 GL4800 Thin Type Infrared Emitting Diode GL4800 • Features I Outline Dimensions Unit : mm 1. Thin type (Thickness : 1.5mm ) 2. Beam angle (A 6: TYP. ± 30°) 3. Radiant flux ( 0>e : MIN. 0.7mW at I F= 20m A ) J Î.O 1 ^ 2 1.5* 02 1.6 _ 2 - CO.5


    OCR Scan     		PDF GL4800 PT4800 PT4800

    l461

    Abstract: No abstract text available
    Text: SHARP GL460/GL461 Double Ended Mold Type Infrared Em itting Diode GL460/GL461 Olitine Dimensions • Features 1. Small double-end type package packaging area : 37% smaller than GL480 2. High output power type (GL461) 3. Taped models 2,000pcs/reel (GL460T/


    OCR Scan     		PDF GL460/GL461 GL480) GL461) 000pcs/reel GL460T/ GL461T) GL460T/GL461T) l461

    PT4600

    Abstract: No abstract text available
    Text: SHARP GL4600/GL4610 GL4600/GL4610 D oubleEn dedMoldTypeln,rared Emitting Diode • Features ■ Outline Dim ensions 1. Compact double ended mold package Packaging a re a : 37% smaller than GL480 2. Narrow beam angle (Half intensity angle : ± 13° ) (Radiant intensity : 3 times as large as GL460)


    OCR Scan     		PDF GL4600/GL4610 GL480) GL460) GL4610) GL4600 PT4600) PT4600

    TIL71

    Abstract: PT4800
    Text: SHARP GL4800 GL4800 Thin Type Infrared Emitting Diode • Features ■ O utlne Dimensions Unit : mm 1. Thin type (T hickness : 1.5mm) 2. Beam angle (A 6 '. T Y P . ±30°) 3. Radiant flux Emitting (S>, : M IN. 0.7mW at IF= 20m A ) 4. Epoxy resin package


    OCR Scan     		PDF GL4800 PT4800) TIL71 PT4800

    Untitled

    Abstract: No abstract text available
    Text: SHARP GL480/G L480Q/G L483Q Infrared Emitting Diode GL480/GL480Q GL483Q • Features 1. Narrow beam angle A0 : TYP. ± 13“ 2. Radiant flux ( e : MIN. 0.7m W at I f = 20m A ) 3. Compact, high reliability by chip coating (GL480Q/GL483Q) 4. Long lead type (GL483Q)


    OCR Scan     		PDF GL480/G L480Q/G L483Q GL480/GL480Q GL483Q GL480Q/GL483Q) GL483Q) PT480) GL480Q/GL483Q

    RW marking

    Abstract: No abstract text available
    Text: SHARP» GL460/GL461 GL460/GL461 Double Ended Mold Type Infrared Emitting Diode • Features ■ Outline Dimensions Unit : mm 1. Sm all dou ble-end type package 0.7 ( packaging area : 37% sm aller than GL480) 0.25 M ark GL460 None GL461 Green (GL461) 3. Taped m odels 2 ,000p cs/reel (GL460T/


    OCR Scan     		PDF GL460/GL461 GL480) GL461) GL460T/ GL461T) GL460 GL461 GL460T /GL461T RW marking

    GL480

    Abstract: No abstract text available
    Text: SH AR R GL4600/GL4610 Double-End Type Infrared Emitting Diode 1. Small double-end type package Mounting area : 37% smaller than GL480 2. Narrow beam angle (A 0 : TYP. ±13° , Radiation intensity : 3 times higher than GL460) 3. High output type (GL4610)


    OCR Scan     		PDF GL4600/GL4610 GL4600 GL4610 GL480