ma21a
Abstract: No abstract text available
Text: BAV19 . BAV21 BAV19 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2012-05-16 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case
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Original
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BAV19
BAV21
DO-35
OD-27)
BAV100.
BAV102
BAV19
BAV20
ma21a
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PDF
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equivalent bav20
Abstract: BAV100 BAV102 BAV18 BAV19 BAV20 BAV21
Text: BAV18 . BAV21 BAV18 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2011-10-17 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case
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Original
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BAV18
BAV21
DO-35
OD-27)
BAV100.
BAV102
equivalent bav20
BAV100
BAV102
BAV18
BAV19
BAV20
BAV21
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PDF
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J BAV21
Abstract: BAV100 BAV102 BAV18 BAV19 BAV20 BAV21
Text: BAV18 . BAV21 BAV18 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2005-08-15 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case
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Original
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BAV18
BAV21
DO-35
OD-27)
BAV100.
BAV102
J BAV21
BAV100
BAV102
BAV18
BAV19
BAV20
BAV21
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PDF
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equivalent bav20
Abstract: BAV19 equivalent
Text: BAV19 . BAV21 BAV19 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2012-07-03 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung 100.200 V Glass case Glasgehäuse
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Original
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BAV19
BAV21
DO-35
OD-27)
BAV100.
BAV102
BAV19
BAV20
equivalent bav20
BAV19 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV18 . BAV21 BAV18 . BAV21 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case Glasgehäuse 3.9
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Original
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BAV18
BAV21
DO-35
OD-27)
BAV100.
BAV102
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PDF
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SMD Dioden
Abstract: LL101A LL101C SD101A SD101B SD101C SMD Schottky Dioden
Text: SD101A . SD101C SD101A . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2006-04-27 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.60 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35
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Original
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SD101A
SD101C
DO-35
OD-27
LL101A.
LL101C
SMD Dioden
LL101A
LL101C
SD101A
SD101B
SD101C
SMD Schottky Dioden
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PDF
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SD103A
Abstract: No abstract text available
Text: SD103A . SD103C SD103A . SD103C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2012-07-03 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V ±0.4 Glass case Glasgehäuse 3.9 ±3 Ø 1.9±0.1 62.5
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Original
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SD103A
SD103C
DO-35
OD-27)
LL103C.
LL103A
SD103A
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PDF
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glass dioden smd
Abstract: No abstract text available
Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2012-07-03 Nominal current Nennstrom 15 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Glass case Glasgehäuse ~ DO-35 ~ SOD-27 Weight approx.
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Original
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SD101B
SD101C
DO-35
OD-27
LL101B.
LL101C
SD101C
SD101B
glass dioden smd
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PDF
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Untitled
Abstract: No abstract text available
Text: SD103A . SD103C SD103A . SD103C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2012-05-10 Nominal current Nennstrom 3.9 62.5 Ø 1.9 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V Glass case Glasgehäuse DO-35
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Original
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SD103A
SD103C
DO-35
OD-27)
LL103C.
LL103A
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PDF
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SOD-27
Abstract: LL101A LL101C SD101A SD101B SD101C
Text: SD101A . SD101C SD101A . SD101C Si-Schottky-Barrier Diodes Si-Schottky-Barrier Dioden Version 2006-04-27 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.60 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA
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Original
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SD101A
SD101C
DO-35
OD-27
LL101A.
LL101C
SOD-27
LL101A
LL101C
SD101A
SD101B
SD101C
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PDF
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SOD-27
Abstract: LL103A LL103C SD103A SD103B SD103C
Text: SD103A . SD103C SD103A . SD103C Si-Schottky-Barrier Diodes Si-Schottky-Barrier Dioden Version 2008-04-17 Nominal current Nennstrom 3.9 62.5 Ø 1.9 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V Glass case Glasgehäuse
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Original
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SD103A
SD103C
DO-35
OD-27)
LL103C.
LL103A
SOD-27
LL103A
LL103C
SD103A
SD103B
SD103C
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PDF
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LL101B
Abstract: LL101C SD101B SD101C SMD Schottky Dioden
Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.50 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35
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Original
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SD101B
SD101C
DO-35
OD-27
LL101B.
LL101C
LL101B
LL101C
SD101B
SD101C
SMD Schottky Dioden
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PDF
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Untitled
Abstract: No abstract text available
Text: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 40.50 V Glass case Glasgehäuse 3.9 62.5 15 mA DO-35
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Original
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SD101B
SD101C
DO-35
OD-27
LL101B.
LL101C
SD101C
SD101B
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PDF
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SOD-27
Abstract: LL103A LL103C SD103A SD103B SD103C
Text: SD103A . SD103C SD103A . SD103C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2008-04-17 Nominal current Nennstrom 3.9 62.5 Ø 1.9 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V Glass case Glasgehäuse DO-35
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Original
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SD103A
SD103C
DO-35
OD-27)
LL103C.
LL103A
SOD-27
LL103A
LL103C
SD103A
SD103B
SD103C
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PDF
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ZPD4.3
Abstract: ZPD12 equivalent
Text: ZPD2.7 . ZPD75 500 mW ZPD2.7 . ZPD75 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2012-05-10 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Ø 1.9 500 mW Nominal Z-voltage Nominale Z-Spannung 2.7.75 V Glass case
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Original
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ZPD75
DO-35
OD-27)
ZMM75
ZPD4.3
ZPD12 equivalent
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PDF
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Zener
Abstract: ZPD18 ZPD5.6 equivalent ZPD8.2 ZMM75 ZPD10 ZPD11 ZPD12 ZPD13 ZPD15
Text: ZPD2.7 . ZPD75 500 mW ZPD2.7 . ZPD75 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2010-12-02 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Ø 1.9 500 mW Nominal Z-voltage Nominale Z-Spannung 2.7.75 V Glass case
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Original
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ZPD75
DO-35
OD-27)
ZMM75
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
Zener
ZPD18
ZPD5.6 equivalent
ZPD8.2
ZMM75
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
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PDF
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smd ag zener
Abstract: ma 156 zener diode zpd 6 ZPD 6,6 ZPD5,1 ZMM75 ZPD10 ZPD11 ZPD12 ZPD13
Text: ZPD1 . ZPD75 500 mW ZPD1 . ZPD75 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2008-09-05 3.9 62.5 Ø 1.9 Maximum power dissipation Maximale Verlustleistung 500 mW Nominal Z-voltage Nominale Z-Spannung 1.75 V Glass case
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Original
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ZPD75
DO-35
OD-27)
ZMM75
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
smd ag zener
ma 156
zener diode zpd 6
ZPD 6,6
ZPD5,1
ZMM75
ZPD10
ZPD11
ZPD12
ZPD13
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PDF
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Diode 4148 MINIMELF
Abstract: No abstract text available
Text: LL 4148, LL 4150, LL 4151, LL 4448, Si-Allzweck-Dioden für die Oberflächenmontage Surface Mount Small Signal Si-Diodes 150 niA Nominal current Nennstrom 50. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung SOD-80 Glass case MiniMELF
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OCR Scan
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OD-80
R0D1RS14
Diode 4148 MINIMELF
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PDF
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smd glass dioden
Abstract: No abstract text available
Text: ZMM 1.ZMM 51 500 mW Silizium-Z-Dioden für die Oberflächenmontage Surface mount Silicon-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 0.75.51 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% Glass case MiniMELF Glasgehäuse MiniMELF
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OCR Scan
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OD-80
R0D1RS14
smd glass dioden
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PDF
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Zener ZPD
Abstract: zpd diode zener diode zpd 6 diode u2 a05 zpd 6.2 zener zpd1-zpd51 MW1 SMD diode MINImelf zener diode smd ZPD47 Zener ZPD 3.3
Text: ZPD 1.ZPD 51 500 mW Silizium-Z-Dioden Silicon-Z-Diodes 0.75.51 V Nominal breakdown voltage Nenn-Arbeitsspannung ±5% Tolerance of zener voltage Toleranz der Arbeitsspannung ECU mox. h j - . , . n ax . ÇvO - K 0.56 DO-35 Glass case Glasgehäuse 0.13 g
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OCR Scan
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DO-35
000017S
Zener ZPD
zpd diode
zener diode zpd 6
diode u2 a05
zpd 6.2 zener
zpd1-zpd51
MW1 SMD diode
MINImelf zener diode smd
ZPD47
Zener ZPD 3.3
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PDF
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Untitled
Abstract: No abstract text available
Text: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35
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OCR Scan
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DO-35
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PDF
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Diode BAV 19
Abstract: No abstract text available
Text: BAV 18.BA V 21 Si-Allzweck-Dioden Small Signal Si-Diodes 200 mA Nominal current Nennstrom 50.200 V Repetitive peak reverse voltage Periodische Spitzensperrspannung ecu ar ffÛX. 01.9 5£ 'f; nax. Svo - h“ 0.56 £ftJ Dimensions / Maße in mm DO-35 Glass case
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OCR Scan
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DO-35
R0D1RS14
000017S
Diode BAV 19
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PDF
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marking SH SOT23
Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Text: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123
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OCR Scan
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0235bDS
DO-35
OD-123
OT-23
marking SH SOT23
smd marking 619
BB505B
smd marking bb
marking 12 SOD123
SOD-123
BB801
BB409
BA 811
SIEMENS marking
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PDF
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Untitled
Abstract: No abstract text available
Text: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.
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OCR Scan
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G0174
000017S
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PDF
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