C2710
Abstract: No abstract text available
Text: C orpora te Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > C ircuit Protection Devices > Product Feature Selector > Product Details C2710 Product Details
|
Original
|
C2710
C2710
|
PDF
|
ifm D 45128
Abstract: kd 2060 transistor
Text: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents
|
Original
|
CR0032
CR0032)
ifm D 45128
kd 2060 transistor
|
PDF
|
TEMPLATEA
Abstract: kd 2060 transistor
Text: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents
|
Original
|
CR0303
CR0303)
document09
TEMPLATEA
kd 2060 transistor
|
PDF
|
ICS9LPRS319
Abstract: wistron AT24RF08C 1R3J AD1984JCP max17003 SRV05-2-GP tai 24c04 tai 24c02 WISTRON power sequence
Text: 10 9 8 April 20 '07 7 Clock Generator ICS9LPRS319 19 H 6 Intel Merom Processor ITP 6 3,4,5 3,4 Thermal Sensor LM26 5 AGTL+ FSB 2 RP-note4 Block Diagram L1:Component 667/800MHz H Intel Crestline-GM DDR2 400/533/667 G INTEGRATED GRAHPICS Channel B UNBUFFERED
|
Original
|
ICS9LPRS319
667/800MHz
200-PIN
4T401
533/667MHz
EC047
EC048
EC049
EC050
EC051
wistron
AT24RF08C
1R3J
AD1984JCP
max17003
SRV05-2-GP
tai 24c04
tai 24c02
WISTRON power sequence
|
PDF
|
GMBT8050L
Abstract: No abstract text available
Text: ISSUED DATE :2004/08/25 REVISED DATE : GM BT8050L N P N E P I TA X I A L T R A N S I S T O R Description The GMBT8050L large current is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10
|
Original
|
BT8050L
GMBT8050L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-12 18 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT • 0.3 MICRON REFRACTORY METAL/GOLD GATE • HIGH ASSOCIATED GAIN • 900 MICRON GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION
|
Original
|
MwT-12
MwT-12
|
PDF
|
transistor MWTA 06
Abstract: mwta 06
Text: MwT-17 500 MHz-12 GHz High Linearity GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES • 1 WATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION
|
Original
|
MwT-17
Hz-12
MwT-17
transistor MWTA 06
mwta 06
|
PDF
|
level measurement with displacer
Abstract: Fisher displacer DLC3000 liquid level transmitter displacer calculation Displacer Liquid Level Transmitter displacer DLC3000 displacer DLC3000 displacer datasheet e6068x PN16
Text: ZTD series intelligence displacer level interface transmitter Description ZTD series intelligence displacer level interface transmitter is produced by Dandong Top Electric Instrument Co. Ltd. cooperating with Fisher Controls Company. We import the original FIELDVUE DLC3000 series intelligence
|
Original
|
DLC3000
275HART
level measurement with displacer
Fisher displacer DLC3000
liquid level transmitter displacer calculation
Displacer Liquid Level Transmitter
displacer
displacer DLC3000
displacer datasheet
e6068x
PN16
|
PDF
|
Ericsson GM 12
Abstract: CD/Ericsson GM 22
Text: Ericsson Ericsson Internal Internal PRODUCT SPECIFICATION TABLE OF CONTENTS E Prepared Prepared also (also subject subject responsible responsible ifif other other) No. No. SEC/S SEC/S Stella Stella Song Song Approved Approved BMR461 series PoL Regulators
|
Original
|
BMR461
1/1301-BMR
461Technical
52-EN/LZT
effic0068-2-27
J-STD-020C
MIL-STD-202G,
Ericsson GM 12
CD/Ericsson GM 22
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other EAB/FAC/P Johan Susanne Hörman Eriksson Approved BMR461 series POL Regulators EAB/FAC/P [Susanne Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 12 A / 60 W
|
Original
|
BMR461
1/1301-BMR
461Technical
01-BMR
12Vin,
J-STD-020C
MIL-STD-202G,
|
PDF
|
Ericsson GM 12
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 46 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 50 A / 165 W
|
Original
|
1/1301-BMR
464Technical
Ericsson GM 12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT SPECIFICATION TABLE OF CONTENTS Prepared also subject responsible if other EYISHDU SEC/S Stella Song Approved BMR464 series SEC/D You) PoL Regulators (Julia 1 (1) (4) No. Checked Input 4.5-14 V, Output up to 50 A / 165 W 1/1301-BMR
|
Original
|
BMR464
1/1301-BMR
464Technical
52-EN/LZT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W
|
Original
|
1/1301-BMR
463Technical
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►|45p ►j w p Units in |im 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-LIKE CARBON DLC PASSIVATION
|
OCR Scan
|
appli300
|
PDF
|
|
|
lg 5528
Abstract: No abstract text available
Text: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION
|
OCR Scan
|
4268Solar
lg 5528
|
PDF
|
transistor MWTA 06
Abstract: 60/transistor MWTA 06
Text: M M ic r o w a v e techno lo g y 2 WATT POWER OUTPUT AT 6 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 5 mm GATE WIDTH DIAMOND-UKE CARBON DLC PASSIVATION T - 1 4 12 GHz High Power GaAs FET M • • • • • w M M M « r iÉ n B H iin iÉ É n iD n n n în
|
OCR Scan
|
MwT-14
bl541Q0
D000b35
transistor MWTA 06
60/transistor MWTA 06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz
|
OCR Scan
|
MwT-10
MwT-10
MwT10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-14 _ 12 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 2 WATT POWER OUTPUT AT 6 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAI7GOLD GATE • 5 mm GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION DESCRIPTION
|
OCR Scan
|
MwT-14
MwT-14
MvvT-14
|
PDF
|
MwT-10
Abstract: No abstract text available
Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL/GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz
|
OCR Scan
|
MwT-10
MwT-10
MwT10
wT-10.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH
|
OCR Scan
|
MwT-13
MwT-13
MwT-13HP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi
|
OCR Scan
|
MwT-13
L-136-J
MwT-13
MwT-13HP
bl24100
|
PDF
|
MWT13HP
Abstract: No abstract text available
Text: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAL/GOLD GATE DIAMOND-LIKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH
|
OCR Scan
|
MwT-13
MwT-13
MwT-13HP
MWT13HP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP DlC SflHTlG? 000G041 flMO « D I X SflE D Data Sheet No.: SESA-200-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 0 3-IS 2 AMP SUPER-EFFICIENT RECTIFIERS DO-1S/DT-1S FEATURES:
|
OCR Scan
|
000G041
SESA-200-A
UL94V-0
ive60Hz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: s * 7T^1E43 OODDEDb T •■ SEMJ 37E D SANSHA ELECTRIC MFG CO SSG150C TRIAC r 7 / ' ~’ / , . For general A.C . power control applications such as A.C . switches, light controls, speed controls and heater controls etc. • General A.C. power use • ItiRMSI^ISOA
|
OCR Scan
|
SSG150C
SSG150C
SS6150C
|
PDF
|