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    LG Corporation GM23C8100BFW

    MASK PROGRAMMABLE ROM, 1MX8, SOP44
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    GM23C Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GM23C4000 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000-15 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000-20 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000A LG Semicon High Performance Read Only Memory Scan PDF
    GM23C4000A12 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000A15 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000AFW12 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000AFW15 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000B10 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000B12 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000B15 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000BFW10 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000BFW12 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000BFW15 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000D LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000D15 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF
    GM23C4000D20 LG Semicon 524,288 x 8 BITS CMOS STATIC READ ONLY MEMORY Scan PDF

    GM23C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The GM23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|


    OCR Scan     		23C8100 512Kx 16/IM GM23C8100 576x8 D8-D14 D15/A-1 GM23C8100 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY SPECIFICATION Rev 1 GM23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MEMORY Description Pin Configuration The GM23C4000 high-performance Read Only Me­ mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be


    OCR Scan     		GM23C4000 GM23C4000 PDF

    23C4000

    Abstract: No abstract text available
    Text: GM23C4000 GoldStar 524,288 WORDS x 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration 32 DIP Top View D escription The G M 23C 4000 high-perform ance Read Only M em ory is organized as 524,288 w ords by eight bits and has an access tim e o f 150/200ns. It is


    OCR Scan     		GM23C4000 150/200ns. 23C4000 23C4000 PDF

    Untitled

    Abstract: No abstract text available
    Text: GM 23C 8100 GoldStar 5 1 2 K x 1 6 /IM GOLDSTAR ELECTRON CO., LTD. X 8 B IT C M O S M A SK R Ö M Description Pin Configuration The GM23C8100 high performance read only memory is organized either as 1,048,576x8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)


    OCR Scan     		GM23C8100 576x8 100pF- GM23C8100 PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Fin Configuration The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050 offers automatic power down controlled by the mask


    OCR Scan     		GM23C16050 600mil GM23C16050FW QQD47SC PDF

    GM23C32200AFW

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C32200AFW high perform ance read only memory is organized either as 4,194,304 x 8 byte mode or 2,097,152 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure


    OCR Scan     		GM23C32200AFW 120/150ns. 44SOP, 015/A D0Q4770 PDF

    4023 Ci

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration 36 DIP The GM23C64001 high performance read only memory is organised as 8,388,606 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation, because of its


    OCR Scan     		GM23C64001 120ns. 40HB757 A0-A21 402fl7S? 4023 Ci PDF

    Untitled

    Abstract: No abstract text available
    Text: W» LG Semicon. Co. LTD Description Pin Configuration The GM23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM23C8100A offers automatic power down controlled by


    OCR Scan     		GM23C8100A wjA15 402fl757 PDF

    GM23C8100BFW

    Abstract: 23C8100B
    Text: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask


    OCR Scan     		GM23C8100B 120/15Qns. IDA14 A0-A18 015/A-l MD2B757 0004fl32 GM23C8100BFW 23C8100B PDF

    Untitled

    Abstract: No abstract text available
    Text: GoldStar GM23C8000A 1,048,576 WORDS X8BIT CMOS MASK ROM GOLDSTAR ELECTRON CO, LTD. Description The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the


    OCR Scan     		GM23C8000A GM23C8000A 120/150ns. 120/150ns PDF

    wja9

    Abstract: No abstract text available
    Text: G M 23 C 16000 A LG Semicon Co.,Ltd. 2M x 8 / IM x 16 BIT CMOS MASK ROM Pin Configuration Description The GM23C16000A high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select.


    OCR Scan     		GM23C16000A GM23C16000A wja9 PDF

    Untitled

    Abstract: No abstract text available
    Text: G M 2 3 C 10 0 0 LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS MASK ROM Description Pin Configuration The GM23C1000 is high performance read only memory organized as 131,072 words by 8 bits. It is designed to be compatible with all micro-processors and similar applications


    OCR Scan     		GM23C1000 GM23C1000 PDF

    GM23C4000A

    Abstract: No abstract text available
    Text: GM23C4000A LG Semicon Co.,Ltd. 52 4 ,2 8 8 W O R D S x 8 B IT CM O S M A SK R O M Pin Configuration Description 32 DIP/SOP T he G M 2 3 C 4 0 0 0 A high perform ance read only m em ory is organized as 524,288 w ords by eight bit and has an access tim e o f 120/150ns. It is designed to


    OCR Scan     		GM23C4000A 120/150ns. A0-A18 GM23C4000A PDF

    Untitled

    Abstract: No abstract text available
    Text: GM23C32001A LG Semicon Co.,Ltd. 4 ,1 9 4 ,3 0 4 W O R D S X 8 BIT CM O S M A SK R O M Description Pin Configuration 36 DIP T he G M 2 3 C 3 2 0 0 1 A high perform ance read only m em ory is organised as 4,19 4 ,3 0 4 x 8 bits and has an access tim e o f 120ns. It needs no external control


    OCR Scan     		120ns. 2001A GM23C32001A PDF

    GM23C410

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM28C4100A high performance read only memory is organized as 524,288 x 8 bit Byte Mode or as 262,144 x 16 bit (Word Mode) followed by BHE mode select. The GM23C4100A offers automatic power down controlled by


    OCR Scan     		GM28C4100A GM23C4100A 4Q26757 0D47BS GM23C410 PDF

    23C32000

    Abstract: 23c3200 M23C32000
    Text: GoldStar GM23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because


    OCR Scan     		GM23C32000 120/150ns. 42-DIP, DDD4D44 23C32000 23c3200 M23C32000 PDF

    23C8001

    Abstract: 02c15 GM23C8001
    Text: ¿fe GM23C8001 GoldStar 1,048,576 WORDSx 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C8001 high performance Read Only Memory is organized as 1,048,576 words by 8 bits and has an access tim e of 120ns. It needs no


    OCR Scan     		GM23C8001 23C8001 120ns. 32-DIP, 000400b 02c15 GM23C8001 PDF

    GM23C4000

    Abstract: No abstract text available
    Text: PRELIMINARY SPECIFICATION Rev 1 G M 23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MEMORY Description The GM23C4000 high-performance Read Only Me­ mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be compatible with all microprocessors and similar ap­


    OCR Scan     		GM23C4000 GM23C4000 PDF

    Untitled

    Abstract: No abstract text available
    Text: GM23C16050 LG Semicon Co.,Ltd. 2 M x 8 / IM x 16 BIT CMOS MASK ROM Pin Configuration Description The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The


    OCR Scan     		GM23C16050 600mil GM23C16050FW GM23C16050 PDF

    Untitled

    Abstract: No abstract text available
    Text: GM23C16001 LG Semicon Co.,Ltd. Description 2,097,152 W ORDS x 8 BIT CMOS M ASK ROM Pin Configuration The G M 23C 16001 high performance read only memory is organized as 2,097,152 words by 8 bits and has an access time o f 120ns. It needs no external control clock to assure simple operation.


    OCR Scan     		GM23C16001 120ns. GM23C16001 120ns A0-A20 PDF

    Untitled

    Abstract: No abstract text available
    Text: GM23C8000A LG Semicon Co.,Ltd. 1,048,576 w o r d s x 8 b i t CMOS MASK ROM Pin Configuration Description 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers


    OCR Scan     		GM23C8000A GM23C8000A 120/150ns. A0-A19 PDF

    GM23C2000

    Abstract: 23c2000
    Text: GM23C2000 LG Semicon Co.,Ltd. 262,144 W ORDS x 8 BIT CMOS MASK ROM Pin Configuration Description The GM 23C2000 high perfimance read only memory is organized as 262,144 words by eight bits and has an access time o f 150ns. It is designed to be compatible with all


    OCR Scan     		GM23C2000 23C2000 150ns. GM23C2000 and586 A0-A17 PDF

    LG 631 IC

    Abstract: ic lg 631
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C64000FW high performance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure


    OCR Scan     		GM23C64000FW 120/150ns. 44SOP, A0-A21 015/A-l Xi-270) 4QEfl757 LG 631 IC ic lg 631 PDF

    Untitled

    Abstract: No abstract text available
    Text: GM23C16001 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 WORDS x 8 BIT CMOS MASK ROM Pin Configuration Description The G M 23C 16001 high performance Read Only Memory is organized as 2,097,152 words by 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation,


    OCR Scan     		GM23C16001 120ns. 36-DIP, GM23C16001 QQ04G3S 00G403b PDF