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    GM23C32000

    Abstract: GM23C32000A
    Text: GM23C32000AFW LG Semicon Co.,Ltd. 4M x 8 / 2M x 16 BIT CMOS MASK ROM Description Pin Configuration The GM23C32000AFW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152 x 16 bits (word mode) and has an access time of


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    GM23C32000AFW 120/150ns. GM23C32000AFW 120/1ess. 015/A GM23C32000FW GM23C32000 GM23C32000A PDF

    4170A

    Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
    Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL


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    GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL 71C41OOD/DL 71C4400B/BL 71C4400C/CL 71C4400D/DL GM71C 800A/AL 4170A mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264 PDF