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    GP 950 Search Results

    GP 950 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    P3LP-157L Coilcraft Inc Low Pass Filter, 150MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P3LP-604L Coilcraft Inc Low Pass Filter, 0.6MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P7LP-155L Coilcraft Inc Low Pass Filter, 1.5MHz, ROHS COMPLIANT PACKAGE-9 Visit Coilcraft Inc
    P7LP-507 Coilcraft Inc Low Pass Filter, 500MHz, SIP-9 Visit Coilcraft Inc Buy
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    GP 950 Price and Stock

    Advantech Co Ltd EKI-9508G-PL-AE

    Managed Ethernet Switches 8GE M12 POE Unmanaged 24-48VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EKI-9508G-PL-AE
    • 1 $1135.58
    • 10 $1135.58
    • 100 $1135.58
    • 1000 $1135.58
    • 10000 $1135.58
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    Advantech Co Ltd EKI-9508G-PH-AE

    Managed Ethernet Switches 8GE M12 POE Unmanaged 72-110VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EKI-9508G-PH-AE
    • 1 $973.35
    • 10 $973.35
    • 100 $973.35
    • 1000 $973.35
    • 10000 $973.35
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    ITT Interconnect Solutions CA06COMPG14S-2PBF80F42

    Standard Circular Connector CAC 4C 4#16S PIN PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CA06COMPG14S-2PBF80F42
    • 1 $36.21
    • 10 $31.72
    • 100 $28.39
    • 1000 $26.82
    • 10000 $26.82
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    ITT Interconnect Solutions CA06COMPG20-29PBF80A176

    Circular MIL Spec Connector CAC 17C 17#16 PIN PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CA06COMPG20-29PBF80A176
    • 1 $160.19
    • 10 $148.43
    • 100 $142.03
    • 1000 $142.03
    • 10000 $142.03
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    ITT Interconnect Solutions CA06COMPG20-29PF80A176

    Circular MIL Spec Connector CAC 17C 17#16 PIN PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CA06COMPG20-29PF80A176
    • 1 $169.69
    • 10 $155.73
    • 100 $144.74
    • 1000 $144.74
    • 10000 $144.74
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    Find more GP 950 price and stock on Findchips.com

    GP 950 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NP-FM50

    Abstract: NP-F330 gp digital camera universal li-ion charger SAA 7000 Casio np20 olympus 765 BP511 f601 canon ccd panasonic rx c50
    Text: PRODUKTINFO Universalladdare digitalkamerabatterier Nyhet våren 2005! GP Digital Camera Universal Lithium Ion laddare är framtagen för 3,6V och 7,2V Lithium Ion batterier för digitalkameror från Canon, Casio, Fuji, GP, Kodak, Konica, Kyocera, Minolta, Nikon,


    Original     		PDF 600mAh 1000mAh 1400mAh 1800mAh NV-GS10EGR/NV-GS10EGS/NV-GS30/NV-GS30B/ -GS40/NV-GS40B/NV-GS50/NV-GS50B/NV-GS50K/ -GS55/NV-GS55K/NV-GS70/NV-GS70B/NV-GS70K/ -GS120/PV-GS200/PV-GS33/PV-GS50/PV-GS50S/ PV-GS55/PV-GS70/VDR-M30/VDR-M30K/VDR-M50/ VDR-M70 NP-FM50 NP-F330 gp digital camera universal li-ion charger SAA 7000 Casio np20 olympus 765 BP511 f601 canon ccd panasonic rx c50

    UPC2726T

    Abstract: UPC2726T-E3
    Text: 1.6 GHz DIFFERENTIAL WIDEBAND SILICON RFIC AMPLIFIER UPC2726T NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES 20 • HIGH GAIN: 15 dB Typical at 400 MHz GP VCC = 5.0 V • WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP Power Gain, GP dB 10 • SUPER SMALL PACKAGE


    Original     		PDF UPC2726T UPC2726T PC2726T UPC2726T-E3 24-Hour UPC2726T-E3

    UPC2726T

    Abstract: UPC2726T-E3
    Text: PRELIMINARY DATA SHEET 1.6 GHz DIFFERENTIAL WIDEBAND SILICON MMIC AMPLIFIER UPC2726T NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES 20 VCC = 5.5 V 5.0 V 4.5 V 3.0 V Gp • WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP • SINGLE POSITIVE DC SUPPLY Power Gain, Gp dB


    Original     		PDF UPC2726T UPC2726T UPC2726T-E3 24-Hour UPC2726T-E3

    Untitled

    Abstract: No abstract text available
    Text: 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8182TB NOISE FIGURE, POWER GAIN vs. FREQUENCY • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V 24 • CIRCUIT CURRENT: ICC = 30 mA TYP at VCC = 3.0 V GP • POWER GAIN: GP = 21.5 dB TYP at f = 0.9 GHz


    Original     		PDF UPC8182TB 24-Hour

    RD06HVF1

    Abstract: 100OHM RD06HVF1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 100OHM RD06HVF1-101

    RD06HHF1-101

    Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-101 mosfet HF amplifier RD 15 hf mitsubishi 10Turns RD06HHF

    overcharge protection circuit diagram ni mh

    Abstract: GP Batteries GP Ni-mh overdischarge protection circuit diagram ni mh GP Batteries NiMH 9v IEC61951-2 GP Batteries nimh backup use 1,2v Ni-MH battery overcharge protection circuit diagram pioneer circuit inc CONNECTOR 16 pin mitsumi pioneer
    Text: 8/F., Gold Peak Building, 30 Kwai Wing Road, Kwai Chung, N.T., Hong Kong Tel : 852 2484 3333 Fax : (852) 2480 5912 E-mail address : [email protected] Website : www.gpbatteries.com.hk SALES AND MARKETING BRANCH OFFICES ASEAN GP BATTERY MARKETING (SINGAPORE) PTE. LIMITED


    Original     		PDF 66rszawa, overcharge protection circuit diagram ni mh GP Batteries GP Ni-mh overdischarge protection circuit diagram ni mh GP Batteries NiMH 9v IEC61951-2 GP Batteries nimh backup use 1,2v Ni-MH battery overcharge protection circuit diagram pioneer circuit inc CONNECTOR 16 pin mitsumi pioneer

    rd15hvf

    Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 rd15hvf RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9

    MAR 703 MOSFET TRANSISTOR

    Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346

    MAR 618 transistor

    Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231

    MAR 618 transistor

    Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET

    DSDC0461

    Abstract: L200CWIR851
    Text: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: [email protected] Website: http://www.ledtronics.com L200CWIR851 Infrared 5mm, Flanged Cylindrical, 8.6mm Height 16° viewing angle DWG BY: BL/ GP


    Original     		PDF L200CWIR851 DSDC0461 DSDC0461 L200CWIR851

    Untitled

    Abstract: No abstract text available
    Text: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: [email protected] Website: http://www.ledtronics.com L200CWIR851 Infrared 5mm, Flanged Cylindrical, 8.6mm Height 16° viewing angle DWG BY: BL/ GP


    Original     		PDF L200CWIR851 DSDC0461

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		PDF RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839

    RD06HVF1

    Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFor Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE

    RD 15 hf mitsubishi

    Abstract: RD06HHF1-101 RD06HHF
    Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz RD06HHF1 30MHz RD06HHF1-101 Oct2011 RD 15 hf mitsubishi RD06HHF

    rd16hhf1

    Abstract: RD16HHF1 application notes Rd16hhf
    Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz 30MHz RD16HHF1 RD16HHF1 application notes Rd16hhf

    GP Powerbank

    Abstract: GPPB510 Powerbank battery mtbf 950-Series 850mAh GP Batteries GPPb
    Text: PRODUCT SPECIFICATION GP PowerBank M510 Model: GPPB510 Revision History Revision Date Initiator Reason for Change 00 1 March 2007 Natalie Chow New release Prepared By Natalie Chow Approved By Iris Lai Date: 1 Mar 07 Date: 1 Mar 07 GPI International Limited


    Original     		PDF GPPB510 1300mAh 1600mAh 1800mAh 2000series 2100series 2300series 2500series 2700series GP Powerbank GPPB510 Powerbank battery mtbf 950-Series 850mAh GP Batteries GPPb

    a1277

    Abstract: a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835
    Text: Single Ended GP - Capacitors B 41821 Standard Series - 85°C B 43821 Construction Radial leads Charge-discharge proof, polar Aluminum case, insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions High CV product, i.e. Very compact


    Original     		PDF B41822/B43822/B41835/B43835 B41821 B43821 -A5335-M -A5475-M 10x20 -A5685-M -A5106-M 16x25 -A5226-M a1277 a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835

    Common PCN Handset Specification Phase 2 v4.2

    Abstract: sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96
    Text: Wireless EDGE Modems MultiModem EDGE with Bluetooth Interface MTCBA-E-B MultiModem EDGE with Ethernet Interface (MTCBA-E-EN) MultiModem EDGE with GPS Functionality (MTCBA-E-GP) MultiModem EDGE (MTCBA-E) MultiModem EDGE with USB (MTCBA-E-U)


    Original     		PDF S000371B) Common PCN Handset Specification Phase 2 v4.2 sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICs TV M51403FP/GP PAL VIDEO CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51403FP/GP is a semiconductor integrated circuit for processing video signals in a PAL system color liquid crystal SECAM B-Y Input E SECAM R-Y Input E


    OCR Scan     		PDF M51403FP/GP M51403FP/GP 00117H

    M51404AFP

    Abstract: circuit diagram of a simple tv lcd on off M51403FP
    Text: MITSUBISHI ICs TV M51403FP/GP PAL VIDEO CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51403FP/GP is a sem iconductor integrated circuit for processing video signals in a PAL system color liquid crystal [T O SE C A M B-Y Input (LC) television set.


    OCR Scan     		PDF M51403FP/GP M51404AFP 32-pin M51403FP/GP M51404AFP circuit diagram of a simple tv lcd on off M51403FP

    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


    OCR Scan     		PDF 3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r

    CB404

    Abstract: cb-406 CB-407 CB-303
    Text: 200. 950 MHz UHF puise power transistors transistors pour applications puisées UHF TYPE PACKAGE' CONFIG. THOMSONCSF pIIM Frequency range W (MHz) Tp/5 Gp min (<JB) b s / %) 400-450 200-500 10 10 7,5 10 10/10 1000/10 60/2 250/10 Vcc Pout (V) (VIO 30 200-500


    OCR Scan     		PDF CB-403) CB-410) CB-406\ CB-4081 CB-406) CB404 cb-406 CB-407 CB-303