GP BJT Search Results

GP BJT Result Highlights (5)

Part	Manufacturer	Description
HN1D05FE	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 400 V, 0.1 A, ES6
OPA2863DGKEVM	Texas Instruments	Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp
P3LP-157L	Coilcraft Inc	Low Pass Filter, 150MHz, ROHS COMPLIANT PACKAGE-3
P3LP-604L	Coilcraft Inc	Low Pass Filter, 0.6MHz, ROHS COMPLIANT PACKAGE-3
P7LP-155L	Coilcraft Inc	Low Pass Filter, 1.5MHz, ROHS COMPLIANT PACKAGE-9

GP BJT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BSH108 Abstract: nokia rf power amplifier transistor Schottky Diode 40V 2A TOPSWITCH battery charger TRANSISTOR BL 100 BL 05A TOPSWITCH battery charger 2A BSH103 BSH111 1PS74SB43 Text: Discretes and MultiMarket ICs DMI – BL Power 08/08/2002 DMI – BL Power Application: Mobile Phone Display LCD Module LCD driver Charger Power Supplies Aux ADCs Smartcard & SIM interface PMU Reset On/Off Analog Audio Codec Hands free GP-IC Semiconductors	Original	PDF	BYD37J BYG60J BSH103 BSH111 PBSS5140D BSH105 BSH112 PBSS5320D BSH108 BSH114 BSH108 nokia rf power amplifier transistor Schottky Diode 40V 2A TOPSWITCH battery charger TRANSISTOR BL 100 BL 05A TOPSWITCH battery charger 2A BSH103 BSH111 1PS74SB43
NE5510279A Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01 Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is	Original	PDF
MMBD2104 Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a	Original	PDF	BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
16-2-472 Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.	Original	PDF	THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
MMBD2103 Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	PDF	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
SMD Codes Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101 Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	PDF	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
RSMRST Abstract: ICH2 82801BA PCA9504A PCA9504ADGG SW00578 Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product specification Supersedes data of 2000 Jul 25 Philips Semiconductors 2000 Aug 16 Philips Semiconductors Product specification Glue chip 4 PCA9504A FEATURES PIN CONFIGURATION • Dual, Strapping, Selectable Feature Sets	Original	PDF	PCA9504A RSMRST ICH2 82801BA PCA9504A PCA9504ADGG SW00578
INTEL 845 MOTHERBOARD CIRCUIT diagram Abstract: PC 845 MOTHERBOARD CIRCUIT diagram ICH2 intel 845 MOTHERBOARD CIRCUIT 82801BA JESD22-A114 JESD78 PCA9504A PCA9504ADGG ICH2-A20M Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product data Supersedes data of 2000 Aug 16 Philips Semiconductors 2002 Mar 28 Philips Semiconductors Product data Glue chip 4 PCA9504A platforms based on Intel processors and chipsets that require additional external circuitry in order to function properly. It is used on	Original	PDF	PCA9504A PCA9504A INTEL 845 MOTHERBOARD CIRCUIT diagram PC 845 MOTHERBOARD CIRCUIT diagram ICH2 intel 845 MOTHERBOARD CIRCUIT 82801BA JESD22-A114 JESD78 PCA9504ADGG ICH2-A20M
845 MOTHERBOARD CIRCUIT diagram Abstract: RSMRST SW00582 PCA9504A SW00580 Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product data Supersedes data of 2003 Mar 28 Philips Semiconductors 2003 Nov 10 Philips Semiconductors Product data Glue chip 4 PCA9504A platforms based on Intel processors and chipsets that require additional external circuitry in order to function properly. It is used on	Original	PDF	PCA9504A PCA9504A 845 MOTHERBOARD CIRCUIT diagram RSMRST SW00582 SW00580
PCA9504ADGG Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram ICH2 82801BA JESD22-A114 JESD78 PCA9504A TSSOP56 845 MOTHERBOARD CIRCUIT diagram Text: INTEGRATED CIRCUITS PCA9504A Glue chip 4 Product data Supersedes data of 2003 Nov 10 Philips Semiconductors 2004 May 11 Philips Semiconductors Product data Glue chip 4 PCA9504A platforms based on Intel processors and chipsets that require additional external circuitry in order to function properly. It is used on	Original	PDF	PCA9504A PCA9504A PCA9504ADGG INTEL 845 MOTHERBOARD CIRCUIT diagram ICH2 82801BA JESD22-A114 JESD78 TSSOP56 845 MOTHERBOARD CIRCUIT diagram
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
transistor gl 1117 Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019 Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	PDF	NESG2101M05 OT-343 NESG2101M05 461e-12 9e-15 transistor gl 1117 NEC NESG2101M05 IC 7408 1GP20 NESG2101M05-T1 S21E re 10019
transistor T1J Abstract: NEC 9319 bjt npn Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	PDF	NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn
BF 3027 Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20 Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	PDF	NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A S21E nec 2562 GA1060 14851 mje 2055 1GP20

marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
ADSP21532 Abstract: ADSP-21532 Text: PRELIMINARY TECHNICAL DATA a t ADSP-21532 Preliminary Technical Data FEATURES 300 MHz High-Performance MSA DSP Core Two 16-Bit MACs, Two 40-Bit ALUs, Four 8-Bit Video ALUs, 40-Bit Shifter RISC-Like Register and Instruction Model for Ease of Programming and Compiler-Friendly Support	Original	PDF	ADSP-21532 16-Bit 40-Bit 160-Lead Managem15 ADSP-21532SBCA-300 ADSP21532 ADSP-21532
Large-signal Modeling of SiGe HBT for PA Applications Abstract: No abstract text available Text: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan	Original	PDF
FQPF8N60C equivalent Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent Text: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as	Original	PDF
SUF-8533SR Abstract: pHEMT operating junction temperature DS110718 Text: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier	Original	PDF	SUF-8533DC SUF-8533 16-Pin, SUF-8533 DS110718 SUF-8533SB SUF-8533SQ SUF-8533SR SUF-8533TR7 pHEMT operating junction temperature DS110718
SUF-8533 Abstract: gp bjt Text: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier	Original	PDF	SUF-8533DC SUF-8533 16-Pin, SUF-8533 EDS-106168 SUF-8533PCBA-410 gp bjt
Untitled Abstract: No abstract text available Text: Blackfin Dual Core Embedded Processor ADSP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 FEATURES MEMORY Dual-core symmetric high-performance Blackfin processor, up to 500 MHz per core Each core contains two 16-bit MACs, two 40-bit ALUs, and a 40-bit barrel shifter	Original	PDF	SP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 16-bit 40-bit 349-ball
mobile rf power amplifier transistor Abstract: RF3931 GaN amplifier Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features       Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB	Original	PDF	RF3931 EAR99 RF3931 DS091021 mobile rf power amplifier transistor GaN amplifier
Untitled Abstract: No abstract text available Text: SUF-8500 SUF-8500DC to 10 GHz, Cascadable pHEMT MMIC Amplifier DC to 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-8500 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self biased direct coupled topology provides exceptional cascadable performance from DC - 10 GHz. Its efficient operation	Original	PDF	SUF-8500 SUF-8500DC SUF-8500 EDS-105932 SGA-8311Z
Untitled Abstract: No abstract text available Text: FDC37C68X s n is c STANDARD MICROSYSTEMS CORPORATION 128 Pin Enhanced Super I/O Controller with GPI/O FEATURES • • • • • • • 5 Volt Operation PC97 Compliant SMI Support Intelligent Auto Power Management 2.88MB Super I/O Floppy Disk Controller	OCR Scan	PDF	FDC37C68X 82077AA FDC37C68X

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GP BJT Search Results

GP BJT Result Highlights (5)

GP BJT Datasheets Context Search

BSH108

NE5510279A

MMBD2104

16-2-472

MMBD2103

SMD Codes

RSMRST

INTEL 845 MOTHERBOARD CIRCUIT diagram

845 MOTHERBOARD CIRCUIT diagram

PCA9504ADGG

smd code book

transistor gl 1117

transistor T1J

BF 3027

marking code C1E SMD Transistor

ADSP21532

Large-signal Modeling of SiGe HBT for PA Applications

FQPF8N60C equivalent

SUF-8533SR

SUF-8533

Untitled

mobile rf power amplifier transistor

Untitled

Untitled