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    GPS SR 87 Search Results

    GPS SR 87 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DA9232-81VZ2 Renesas Electronics Corporation Configurable, High-Efficiency Buck Regulator for GPS Sub-Systems in Wearable Devices Requiring Ultra-Low Voltage Ripple Visit Renesas Electronics Corporation
    DA9233-A1VZ2 Renesas Electronics Corporation Configurable, High-Efficiency PMIC for GPS Sub-Systems in Wearable Devices Requiring Ultra-Low Voltage Ripple Visit Renesas Electronics Corporation

    GPS SR 87 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GPS SR 87

    Abstract: No abstract text available
    Text: GPS Engine Board Manual SR-87 SiRF StarⅢ V 1.0.1 ProGin Technology Inc. 12F-1, No. 5, Lane 7, De-an St., Lingya District, Kaohsiung 802, Taiwan Tel:+886-7-7278885 Fax:+886-7-7214117 E-mail: [email protected] http://www.progin.com.tw SR-87 GPS Engine Board Manual


    Original     		PDF SR-87 12F-1, SR-87 GPS SR 87

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip


    Original     		PDF MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1

    C4532X5R1H475MT

    Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    200B103MW

    Abstract: 100B5R6CW
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW

    Ericsson 15GHz MW Antenna

    Abstract: max2115 dvb-t tv splitter circuit laptop LVDS vga input satellite receiver TUNER RF 2.4Ghz band receiver bpsk modulation maxim vco 824MH Ericsson Base Station MAX2118
    Text: WIRELESS Data Sheets ANALOG DESIGN SOLUTIONS Applications Notes • Free Samples • N ITIO D E 15th 802.11b Zero-IF Radio Delivers Best-In-Class Size, Power, and Sensitivity Performance RE FUTU CT U D O R P • -87dBm Receiver Sensitivity at 11Mbps Data Rate Is 3dB Better than Other


    Original     		PDF -87dBm 11Mbps MAX2820* FILTE469: MAX4000 MAX4473 MAX4000 -45dBm Ericsson 15GHz MW Antenna max2115 dvb-t tv splitter circuit laptop LVDS vga input satellite receiver TUNER RF 2.4Ghz band receiver bpsk modulation maxim vco 824MH Ericsson Base Station MAX2118

    MRF5S9101N

    Abstract: 200B A113 A114 A115 AN1955 C101 JESD22 MRF5S9101NBR1 MRF5S9101NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1 MRF5S9101N 200B A113 A114 A115 AN1955 C101 JESD22 MRF5S9101NBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1

    25C1740

    Abstract: marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 3, 5/2006 Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1 25C1740 marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    GPS SR 87

    Abstract: CXD2930BR CXA1951AQ
    Text: CXD2930BR GPS LSI with Built-in 32-bit RISC CPU Description The CXD2930BR is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, RAM, UART, timer, etc. This LSI, used together with an external ROM and


    Original     		PDF CXD2930BR 32-bit CXD2930BR 32-bit CXA1951AQ) 16-channel 32K-byte GPS SR 87 CXA1951AQ

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 0, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    marking Z4

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    ATC100B331

    Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 ATC100B331 MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 515D107M050BB6A

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi

    MWE6IC9100N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N--1 MWE6IC9100N MWE6IC9100NR1 MWE6IC9100N--1

    Untitled

    Abstract: No abstract text available
    Text: SONY CXD2930BR GPS LSI with Built-in 32-bit RISC CPU Description The CXD2930BR is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, RAM, UART, timer, etc. This LSI, used together with an external ROM and


    OCR Scan     		PDF CXD2930BR 32-bit CXD2930BR 32-bit CXA1951AQ) 16-channel 32K-byte

    sv31

    Abstract: SV22 tokyo denpa
    Text: SONY OXD2930BR GPS LSI with Built-in 32-bit RISC CPU Description The CXD2930BR is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, RAM, UART, timer, etc. This LSI, used together with an external ROM and


    OCR Scan     		PDF OXD2930BR 32-bit CXD2930BR CXA1951AQ) 16-channel 32K-byte CXD2930BR sv31 SV22 tokyo denpa