Untitled
Abstract: No abstract text available
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
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sot23 nc marking
Abstract: WTC2301
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
sot23 nc marking
WTC2301
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Untitled
Abstract: No abstract text available
Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59
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BSR316P
PG-SC59
L6327
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MOSFET 2301 SOT-23
Abstract: 2301 marking sot-23 WTC2301
Text: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable
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WTC2301
OT-23
OT-23
12-May-05
MOSFET 2301 SOT-23
2301 marking sot-23
WTC2301
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type P-Channel MOSFET KI2333CDS • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● V DSS=-12V,ID=-5.1A 1 0.55 RD S O N =59mΩ(MAX) @ V GS =-1.8V,ID=-2A +0.1 1.3-0.1 +0.1 2.4-0.1 RD S(O N) =45mΩ(MAX) @ V GS =-4.5V,ID=-5.1A 0.4 3 ● RD S(O N) =35mΩ (MAX) @ V GS =-2.5V,ID=-4.5A
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Untitled
Abstract: No abstract text available
Text: BSC200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications
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BSC200P03LS
IEC61249-2-21
200P03LS
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5R520P
Abstract: PG-TO-252-3-21 IPD50R520CP JESD22
Text: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.520 Ω 13 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant
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IPD50R520CP
PG-TO252
5R520P
5R520P
PG-TO-252-3-21
IPD50R520CP
JESD22
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
40dBc
IEEE802
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
40dBc
IEEE802
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Untitled
Abstract: No abstract text available
Text: CSY210 GaAs MMIC P r e l i m i n ar y D a t a s h e e t *TX/RX- and diversity switch for mobile communications *High input power capability 36dBm P_1dB @ 3V
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CSY210
36dBm
900MHz)
57dBm
SCT598
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BSR92P
Abstract: No abstract text available
Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -250 V 11 W -0.14 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59
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BSR92P
PG-SC59
L6327
BSR92P
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Untitled
Abstract: No abstract text available
Text: S GS-THOMSON :LiM !0 gS VN450 THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY TYPE Channel RDS(on loUT V cc VN 450 1 & 2 3 4 0 m Î2 300 m i l 10 A 2 A 36 V 36 V . OUTPUT CURRENT (CONTINUOUS): 10 A (CHANNEL 1,2) @ Tc = 25 0 C 2 A (CHANNEL 3) @ Tc = 25 0 C
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VN450
VN450
SO-20
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK1939-01 e iL a iE ir u ô U É FAP-IIA Series N-channel MOS-FET 600V 8A 100W > Outline Drawing > Features - 1,2 a High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof
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2SK1939-01
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Untitled
Abstract: No abstract text available
Text: _ Si3458DV VISHAY ▼ Vishay Siliconix New Product N-Channel 60-V D-S MOSFET PRODUCT SUMMARY r DS(on) (& ) I d (A ) 0 .1 0 @ V GS= 10 V ±3 .2 0.13 @ VGS = 4.5 V ±2 .8 V d s (V) 60 (1,2, 5, 6) D Q TSOP-6 Top View 1 6 2
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Si3458DV
S-61517â
12-Apr-99
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Untitled
Abstract: No abstract text available
Text: SEMIKRON INC 3bE D • Ûl3bb71 QDG2S11 3 M S E K G SEMIKRON Absolute Maximum Ratings Symbol Vos V dgr Id I dm V gs Pd T|,Tstg Visol humidity climate Values Units 500 500 9 36 ±20 125 - 5 5 . . . + 150 2 500 Class F 5 5 /1 5 0 /5 6 V V A A V W °C V 9 36
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l3bb71
QDG2S11
13bb71
613bb71
QDQ2S14
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RS300
Abstract: No abstract text available
Text: • 3 5 1 3 0 7 4 000543=] T ■ T -2 5 -3 T RS 300 240 - xx - 0 • 3-phase solid state relay. • Zero switching. « Ohmic loads. • Load current: 3 x 10 A, 25 A, 40 A. • Line voltage: 12-240 VAC. • Control voltage: 3-32 VDC. • Output: 3 alternistors.
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240xx
RS300
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HEF4752VP
Abstract: Pure sinewave inverter circuit diagram HEF4752V 3 phase inverter HEF4752V HEF4752 sot135a
Text: HEF4752V LSI A.C. MOTOR CONTROL CIRCUIT The HEF4752V is a circu it fo r a.c. m otor speed control utilizing LOCMOS technology. The circu it synthesizes three 120° out o f phase signals, o f which the average voltage varies sinusoidally w ith tim e in the frequency range 0 to 200 Hz. The method employed is based upon the pulse w idth m odulation
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HEF4752V
HEF4752V
HEF4752V.
HEF4752VP
Pure sinewave inverter circuit diagram
3 phase inverter HEF4752V
HEF4752
sot135a
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n SEMITRANS M Power MOSFET Modules 120 A, 200 V, 17 m fl Absolute Maximum Ratings Symbol Conditions 1 V ds V dgr Id R gs = 20 kQ Values 200 200 120 87 360 ±20 500 55 . . .+150 2 500 Class F 55/150/56 Tease = 25 °C Tease = 85 °C Idm V gs Pd
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13bb71
120B251
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Untitled
Abstract: No abstract text available
Text: 00 ^WA National ä ü Semiconductor DM54148 Priority Encoder General Description Features This TTL encoder features priority decoding of the input data to ensure that only the highest-order data line is encoded. The DM54148 encodes eight data lines to three-line
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DM54148
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100165F
Abstract: 100165Y LM 340 TS 12 4 bit encoder
Text: Philips Components 100165 Document No. 853-0628 ECN No. 99800 Universal Priority Encoder Date of Issue June 14,1990 Status Product Specification ECL Products • Typical propagation delay: 2.5ns • Typical supply current -lEE : 125mA DESCRIPTION 100165 is a Universal Priority Encoder
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125mA
310mV
1050mV
1050m
100165F
100165Y
LM 340 TS 12
4 bit encoder
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dm54148j
Abstract: DM54 DM54148 DM54148W J16A W16A
Text: National Semiconductor DM54148 Priority Encoder General Description Features This TTL encoder features priority decoding of the input data to ensure that only the highest-order data line is en coded. The DM54148 encodes eight data lines to three-line 4-2-1 binary (octal). Cascading circuitry (enable input E1
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DM54148
DM54148J
TL/F/6545-2
DM54
DM54148W
J16A
W16A
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BC264
Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Text: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages
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CB-76
lY21sl
BC264
transistor a effet de champ b c 264
transistor bc264
F-139 equivalent
transistor BC 55
TRANSISTOR effet de champ
BC 264
CB-76 50
transistor BC 1
BF 212 transistor
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DM54
Abstract: DM54148 DM54148J J16A OMS4148 W16A
Text: National Semiconductor DM54148 Priority Encoder General Description Features This TTL encoder features priority decoding of the input data to ensure that only the highest-order data line is en coded. The DM54148 encodes eight data lines to three-line 4-2-1 binary (octal). Cascading circuitry (enable input E1
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DM54148
TL/F/6545â
DM54
DM54148J
J16A
OMS4148
W16A
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions Values v Vos V dgr Id V V A A A V W °C V 200 200 120 87 360 ±20 500 55 . .+150 2 500 C la ss F 55/150/56 R g s = 20 k£i Tease —25 °C Tcase - 85 °C Id m V gs Pd Tj, Tstg Visol humidity climate Units
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M120B25:
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