Untitled
Abstract: No abstract text available
Text: SP14T Antenna Switch Module for 12TRx/2Tx with MIPI I/F CXM3617ER Description The CXM3617ER is a SP14T antenna switch module for GSM / UMTS / CDMA / LTE multi-mode handset. The CXM3617ER has a +1.8 V CMOS compatible decoder with MIPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high
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SP14T
12TRx/2Tx
CXM3617ER
CXM3617ER
VQFN-26P
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SP4T Antenna Switch
Abstract: CXM3580AUR
Text: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.
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CXM3580AUR
CXM3580AUR
UQFN-26P
SP4T Antenna Switch
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3580A
Abstract: CXM3580AUR
Text: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.
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CXM3580AUR
CXM3580AUR
UQFN-26P
3580A
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gsm signal amplifier
Abstract: LMV248 rf detector diode low power Micro Controller National Semiconductor smd diode code DD
Text: National News June 2002 LMV248 www.national.com/pf/LM/LMV248.html Dual Band GSM Power Controller Typical Application Circuit V DD From BB BS Ramp V DD T x_En OUT_A VfA VfB TC V DD V DD V HOME OUT_B GND COMP2 COMP1 GND V DD PA Directional Couplers RF IN Diplexer
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LMV248
com/pf/LM/LMV248
LMV248
LLP-16
gsm signal amplifier
rf detector diode low power
Micro Controller National Semiconductor
smd diode code DD
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WHL032
Abstract: GSM Gate Controller
Text: C2O ACCESS CONTROLLER CALL ‘2’ OPEN USING YOUR MOBILE PHONE Features Easy Operation • Easy to Install and Configure using SMS commands No PC required . • User Calls C2O • User Password Controlled • If valid C2O operates Gate • Relay Output rated 1.2KW
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PSU12V1AIN-IP
110-240Vac
12Vdc
Password1234
WHL032
GSM Gate Controller
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Untitled
Abstract: No abstract text available
Text: NCS5021 Product Preview Dual Band EDGE Compatible PA Controller The NCS5021 circuit is dedicated to RF Power amplifier control for GSM and DCS standards. It significantly reduces the number of external passive devices while giving the RF designer the capability to
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NCS5021
3x3-12
NCS5021/D
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tray qfn 0505
Abstract: No abstract text available
Text: NCS5021 Product Preview Dual Band EDGE Compatible PA Controller The NCS5021 circuit is dedicated to RF Power amplifier control for GSM and DCS standards. It significantly reduces the number of external passive devices while giving the RF designer the capability to
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NCS5021
3x3-12
NCS5021/D
tray qfn 0505
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dcs response time
Abstract: 16 pins qfn 3x3 amplifier gsm QFN3x3-12 HP 1910 Switch
Text: NCS5021 Product Preview Dual Band EDGE Compatible PA Controller The NCS5021 circuit is dedicated to RF Power amplifier control for GSM and DCS standards. It significantly reduces the number of external passive devices while giving the RF designer the capability to
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NCS5021
NCS5021
NCS5021/D
dcs response time
16 pins qfn 3x3 amplifier gsm
QFN3x3-12
HP 1910 Switch
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rf detector diode
Abstract: cfdb DIODE RF DETECTOR LMV248 LMV248LQ LMV248LQX RF Directional Couplers
Text: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates
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LMV248
LMV248
rf detector diode
cfdb
DIODE RF DETECTOR
LMV248LQ
LMV248LQX
RF Directional Couplers
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gsm signal amplifier circuit diagram
Abstract: IC internal structure rf detector diodes
Text: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates
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LMV248
gsm signal amplifier circuit diagram
IC internal structure
rf detector diodes
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
CGY2010G
MGB764
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AP124-93
Abstract: AP125-94 TSSOP-20 2.7 3.5 s band
Text: Preliminary GaAs IC 3 Stage GSM Power Amplifier AP125-94 TSSOP-20 Features • Single Supply, +3.5 V Operation 0.0256 0.65 mm BSC PIN 20 ■ Output Power of 35 dBm 0.009 (0.22 mm) REF. 0.173 (4.40 mm) ± 0.004 (0.10 mm) ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage
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AP125-94
TSSOP-20
AP124-93
3/99A
AP125-94
TSSOP-20
2.7 3.5 s band
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Schottky Diodes at 915MHZ
Abstract: MRFIC1817 LT317 R13B1 AN1602 LT17 R13C AN1697 DCS1800 GSM900
Text: Order this document by AN1697/D AN1697 GSM900/DCS1800 Dual-Band 3.6 V Power Amplifier Solution with Open Loop Control Scheme Prepared by: Jacques Trichet, Gilles Montoriol, Cyril Quennehen, Philippe Riondet, Brigitte Ray, Philippe Didier Motorola, Inc., Semiconductor Prouducts Section, Wireless Subcriber Systems Group
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AN1697/D
AN1697
GSM900/DCS1800
DCS1800/PCS1900
MRFIC0919
MRFIC0917
Schottky Diodes at 915MHZ
MRFIC1817
LT317
R13B1
AN1602
LT17
R13C
AN1697
DCS1800
GSM900
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LT5503
Abstract: No abstract text available
Text: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)
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LTC4402-1/LTC4402-2
ANSI-136)
LTC4402-1)
LTC4402-2)
300MHz
450kHz
92cm2
LTC3200
100mA
LTC3401
LT5503
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LT5503
Abstract: No abstract text available
Text: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)
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LTC4403-1/LTC4403-2
ANSI-136)
LTC4403-1)
LTC4403-2)
300MHz
i20dBm
LT5515
20dBm
LT5516
800MHz
LT5503
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LTC4402-1
Abstract: LTC4402-1EMS8 LTC4402-2 LTC4402-2EMS LTC4402-X nimh spice model charge nd1 marking code 900mhz Diplexer phase shifter DC-3GHz LTC5507
Text: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)
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LTC4402-1/LTC4402-2
ANSI-136)
LTC4402-1)
LTC4402-2)
300MHz
450kHz
92cm2
LTC3200
100mA
LTC3401
LTC4402-1
LTC4402-1EMS8
LTC4402-2
LTC4402-2EMS
LTC4402-X
nimh spice model charge
nd1 marking code
900mhz Diplexer
phase shifter DC-3GHz
LTC5507
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cellular phone amplifier power control transistor
Abstract: mobile rf power amplifier transistor nd1 marking code RF AMPLIFIER FOR 10MHz LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS RF schottky diode 900mhz Diplexer
Text: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)
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LTC4403-1/LTC4403-2
ANSI-136)
LTC4403-1)
LTC4403-2)
300MHz
20dBm
LT5515
LT5516
800MHz
cellular phone amplifier power control transistor
mobile rf power amplifier transistor
nd1 marking code
RF AMPLIFIER FOR 10MHz
LTC4403-1
LTC4403-1EMS8
LTC4403-2
LTC4403-2EMS
RF schottky diode
900mhz Diplexer
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ET70
Abstract: sim card controller ic
Text: Chip Card & Security SLE 76C720P 296 kBytes User-ROM 72 kBytes E²PROM 8 kBytes RAM 16-bit security controller optimized for mobile communication applications in 0.13 µm CMOS technology Short Product Information 10.08 SLE 76C720P Short Product Information
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76C720P
16-bit
76C720P
SLE76C720P
16-bit
144KB
256KB
320KB
360KB
400KB
ET70
sim card controller ic
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iso7816 sim
Abstract: ISO7816 NCN6011 NCN6011DMR2 NCN6011DTB NCN6011DTBR2
Text: NCN6011 Low Power Level Shifter The NCN6011 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external micro controller. The device handles all the signals needed to control the data transaction between the external Card and the MPU.
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NCN6011
NCN6011
r14525
NCN6011/D
iso7816 sim
ISO7816
NCN6011DMR2
NCN6011DTB
NCN6011DTBR2
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ET70
Abstract: SLE76C
Text: Chip Card & Security SLE 76C722P 196 kBytes User-ROM 72 kBytes E²PROM 6 kBytes RAM 16-bit security controller optimized for mobile communication applications in 0.13 µm CMOS technology Short Product Information 10.08 SLE 76C722P Short Product Information
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76C722P
16-bit
76C722P
SLE76C722P
16-bit
256KB
320KB
360KB
400KB
448KB
ET70
SLE76C
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MDC5100/D SEMICONDUCTOR TECHNICAL DATA M DC5100 Advance Information A ntenna S w itch Controller The MDC5100 is designed to control GaAs RF switches which require positive and negative going control voltages to select the switch path. All input control signals are
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MDC5100/D
DC5100
MDC5100
46A-02
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gsm signal amplifier circuit diagram
Abstract: MGD629
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
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PCA5075
SA1620.
CGY2013G
CGY2013G
MGD629
SMD0402;
SMD0603.
gsm signal amplifier circuit diagram
MGD629
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HF power amplifier
Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
PCA5075
SA1620.
711062b
HF power amplifier
ze 003 ic
CGY2010G
LQFP48
LQFP64
LQFP80
PCA5075
SA1620
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