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Bimba Manufacturing Company UGSM-1930 Metric Slide, Ultran Rodless, Gold Coupling Strength ; 19mm Bore; Stroke: 30 mm \| Bimba UGSM-1930
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	UGSM-1930	Bulk		5 Weeks	1	1 $918.05 10 $918.05 100 $918.05 1000 $918.05 10000 $918.05	Get Quote
Bimba Manufacturing Company UGSM-19300 Metric Slide, Ultran Rodless, Gold Coupling Strength ; 19mm Bore; Stroke: 300 m \| Bimba UGSM-19300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	UGSM-19300	Bulk		5 Weeks	1	1 $1015.25 10 $1015.25 100 $1015.25 1000 $1015.25 10000 $1015.25	Get Quote
Bimba Manufacturing Company UGSM-1930-T Metric Slide, Ultran Rodless, Gold Coupling Strength ; 19mm Bore; Stroke: 30 mm \| Bimba UGSM-1930-T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	UGSM-1930-T	Bulk		5 Weeks	1	1 $945.46 10 $945.46 100 $945.46 1000 $945.46 10000 $945.46	Get Quote
Bimba Manufacturing Company UGSM-19300-S Metric Slide, Ultran Rodless, Gold Coupling Strength ; 19mm Bore; Stroke: 300 m \| Bimba UGSM-19300-S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	UGSM-19300-S	Bulk		5 Weeks	1	1 $1026.49 10 $1026.49 100 $1026.49 1000 $1026.49 10000 $1026.49	Get Quote
Bimba Manufacturing Company UGSM-19300-AU Metric Slide, Ultran Rodless, Gold Coupling Strength ; 19mm Bore; Stroke: 300 m \| Bimba UGSM-19300-AU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	UGSM-19300-AU	Bulk		5 Weeks	1	1 $1128.89 10 $1128.89 100 $1128.89 1000 $1128.89 10000 $1128.89	Get Quote

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GSM1930 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor marking PB C8 Abstract: NI-780S SMD transistor 2x sot 23 Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B GSM1930 MRF18060BLSR3 transistor marking PB C8 NI-780S SMD transistor 2x sot 23	PDF
SMD Transistor z6 Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2 Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	GSM1930 MRF18060BLSR3 SMD Transistor z6 transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2	PDF
BC847 Abstract: GSM1900 GSM1930 LP2951 MRF18060 MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 SMD Transistor BC847 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060B/D GSM1930 MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 BC847 GSM1900 LP2951 MRF18060 MRF18060BLSR3 SMD Transistor BC847	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B/D GSM1930 MRF18060BR3 MRF18060BSR3 MRF18060BLSR3	PDF
MOTOROLA SCR 1725 Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1	Original	DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901	PDF
SMD TRANSISTORS AAA Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060B/D MRF18060B MRF18060BR3 MRF18060BS MRF18060BSR3 GSM1930 MRF18060BSR3 SMD TRANSISTORS AAA	PDF
RF Power Transistor MRF18060B MRF18060 Abstract: SMD Transistor z6 50H60 smd z5 transistor GSM1900 GSM1930 LP2951 MRF18060 MRF18060B MRF18060BLSR3 Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060B/D MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 MRF18060B MRF18060BR3 MRF18060BLSR3 RF Power Transistor MRF18060B MRF18060 SMD Transistor z6 50H60 smd z5 transistor GSM1900 GSM1930 LP2951 MRF18060	PDF
J299 Abstract: J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 J299 J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B GSM1930 MRF18060BLSR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060B/D MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 MRF18060BSR3	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF18060B/D GSM1930 MRF18060B MRF18060BS MRF18060B/D	PDF
motorola mc 2100 Abstract: DGS SMD TRANSISTOR BC847 GSM1900 GSM1930 LP2951 MRF18060 MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BR3 MRF18060BSR3	Original	MRF18060B/D MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 GSM1930 MRF18060BR3 MRF18060BSR3 motorola mc 2100 DGS SMD TRANSISTOR BC847 GSM1900 LP2951 MRF18060 MRF18060BLSR3	PDF
smd diode J476 Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3	PDF

RF Power Transistor MRF18060B MRF18060 Abstract: SMD Transistor z6 J290 smd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B MRF18060BR3 MRF18060BS MRF18060BSR3 GSM1930 RF Power Transistor MRF18060B MRF18060 SMD Transistor z6 J290 smd	PDF
capacitor J400 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	GSM1930 MRF18060B MRF18060BS capacitor J400	PDF
capacitor J400 Abstract: Motorola Potentiometer cd 740 chip smd transistor A1 sot-23 smd UJ 99 BC847 GSM1900 GSM1930 LP2951 MRF18060 Text: MOTOROLA O rder this docum ent by M RF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18060B M R F18060B S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	OCR Scan	RF18060B/D GSM1930 65A-04 MRF18060BS) MRF18060B MRF18060BS capacitor J400 Motorola Potentiometer cd 740 chip smd transistor A1 sot-23 smd UJ 99 BC847 GSM1900 LP2951 MRF18060	PDF