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    Text: SILICON N CHANNEL MOS TYPE -GT20G102ÍSM STROBE FLASH APPLICATIONS Unit in ram 1 0 .3 MAX . High Input Impedance . Low Saturation Voltage : V ç e sat)= 8V(Max.) (Ic=130A) . Enhancenent-Mode . 12V Gate Drive riAxinun ratings (Ta-25° o SYMBOL CHARACTERISTIC


    OCR Scan     		PDF -GT20G102 Ta-25° GT20G102C