GT40Q322 Search Results

GT40Q322 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GT40Q322		Toshiba	SILICON N CHANNEL IGBT		Original	PDF

GT40Q322 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GT40Q322 Abstract: No abstract text available Text: GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT40Q322 Preliminary Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed : tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector	Original	PDF	GT40Q322 GT40Q322
gt40q322 Abstract: No abstract text available Text: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector • The 4th generation	Original	PDF	GT40Q322 10oducts gt40q322
GT40Q322 Abstract: No abstract text available Text: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector	Original	PDF	GT40Q322 GT40Q322
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	PDF	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	PDF	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122
GT30J124 Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125 Text: 製品カタログ 2010-3 東芝半導体製品カタログディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。	Original	PDF	BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125