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Abstract: No abstract text available
Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mm STROBE FLASH APPLICATIONS l 3rd Generation l Enhancement−Mode l Low Saturation Voltage: VCE sat = 8 V (Max.) (@IC = 150 A) l 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT8G103
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Untitled
Abstract: No abstract text available
Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit: mm z 3rd Generation A z Enhancement−Mode z Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A) z 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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GT8G103
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Untitled
Abstract: No abstract text available
Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mm STROBE FLASH APPLICATIONS ! 3rd Generation ! Enhancement−Mode ! Low Saturation Voltage: VCE sat = 8 V (Max.) (@IC = 150 A) ! 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT8G103
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gt8g103
Abstract: No abstract text available
Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT8G103 Unit: mm STROBE FLASH APPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: VCE sat = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT8G103
gt8g103
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GT8G103
Abstract: No abstract text available
Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit: mm z 3rd Generation A z Enhancement−Mode z Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A) z 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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GT8G103
GT8G103
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Untitled
Abstract: No abstract text available
Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mm STROBE FLASH APPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: VCE sat = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT8G103
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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ka7745
Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
Text: AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is
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AN9006
ka7745
EI-1614
xenon light source circuit diagram
igbt xenon tube
IC-276
3V to 300V dc dc converter
xenon lamp design
SGR20N40L
SCR TRIGGER PULSE TRANSFORMER
xenon strobe lamp
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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ka7745
Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
Text: July, 2000 AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is
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AN9006
ka7745
3V to 300V dc dc converter
xenon light source circuit diagram
EI-1614
igbt xenon tube
control light intensity using SCR
AN9006
EI 33 transformer
SCR TRIGGER PULSE TRANSFORMER
SGR20N40L
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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BCE0010A
GT30F121
GT30G121
GT30G131
MG30T1AL1
GT30*122
GT45F12
MG60M1AL1
gt30f
GT60M301
GT60M101
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GT30J124
Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。
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BCJ0010G
BCJ0010F
GT30J124
GT45F122
GT30F123
GT30F124
gt30f122
IGBT GT30F124
gt30g122
gt30g124
GT45G122
GT30F125
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 G 1 03 Unit in mm STROBE FLASH APPLICATIONS 6.8 M A X • • • 3rd Generation Enhancement-Mode Low Saturation Voltage T ; TVUE sat — ° v uvifct-x.; ( 4.5 V Gate Drive
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GT8G103
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GT8G103
Abstract: vqe 24 e
Text: TOSHIBA GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 G 1 03 Unit in mm STROBE FLASH APPLICATIONS • • • 3rd Generation Enhancement-Mode Low Saturation Voltage : VcE sat = 8V(Max.) (@IC = 150 A) 4.5 V Gate Drive •
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GT8G103
GT8G103
vqe 24 e
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL M OS TYPE G T STROBE FLASH APPLICATIONS • • • • 8 3rd Generation Enhancement-Mode Low Saturation Voltage : VcE sat = 8V (Max.) (@Iq = 150A) 4.5V Gate Drive 25°C) CHARACTERISTIC
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GT8G103
95MAX.
-350V
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Untitled
Abstract: No abstract text available
Text: T O S H IB A GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 G 1 03 Unit in mm STROBE FLASH APPLICATIONS • • • • 3rd Generation Enhancement-Mode Low Saturation Voltage : VCE sat = 8V(Max.) (@IC = 150 A) 4.5 V Gate Drive
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