MOS Controlled Thyristor
Abstract: thyristor lifetime
Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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MCT00,
reverse-conducting thyristor
gto Gate Drive circuit
IGCT thyristor
IGCT mitsubishi
Usha Rectifier
Emitter Turn-Off thyristor
eto thyristor
GTO triac
HEXFET Power MOSFET designer manual
MOS-Controlled Thyristor
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SGCT
Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Text: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H
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CM800HA34H
CM1200HA-
CM1600HC-
CM1800HC34H
CM800HB50H
CM1200HD50H
CM800HB66H
CM1200HB66H
CM400HB-
CM600HB90H
SGCT
mitsubishi SGCT
scr gate driver ic 600 A
igbt types 6000v
MITSUBISHI GATE TURN-OFF THYRISTOR scr
GTO thyristor driver
m57962l
GTO thyristor 1200V 50A
SGCT 400A
NATIONAL IGBT
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anode gate thyristor
Abstract: No abstract text available
Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a [email protected], *corresponding author
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5x1014
1x107
DEAR0000112)
anode gate thyristor
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3 phase inverters circuit diagram igbt
Abstract: inverters circuit diagram igbt controller for PWM with IGBT igbt dc to dc chopper control circuit diagram PWM igbt 200v dc motor igbt ac motor speed control circuit diagram with IGBT 3 phase motor inverters circuit diagram igbt FZ800R16KF1 SCR Inverter datasheet
Text: Dynamic Gate Controller DGC - A New IGBT Gate Unit for High Current / High Voltage IGBT Modules 1 Introduction The “Dynamic Gate Controller” (DGC) represents the forth generation of intelligent IGBT driver concepts. The DGC is especially designed to drive and to protect high-power IGBTs as
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CH-2533
3 phase inverters circuit diagram igbt
inverters circuit diagram igbt
controller for PWM with IGBT
igbt dc to dc chopper control circuit diagram
PWM igbt
200v dc motor igbt
ac motor speed control circuit diagram with IGBT
3 phase motor inverters circuit diagram igbt
FZ800R16KF1
SCR Inverter datasheet
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Untitled
Abstract: No abstract text available
Text: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Title This P-Channel enhancement mode silicon gate power field FP8 effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, 0 relay drivers, and drivers for high power bipolar switching
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RFP8P10
TA17511.
TB334
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TA0522
Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
Text: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP15N05L,
RFP15N06L
TA0522.
RFP15N05L
O-220AB
RFP15Nopment.
TA0522
RFP15N06L
RFP15N05L
RFP15N05
AN7254
AN7260
TB334
RFP15N
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AN7254
Abstract: RFP8P10 TB334
Text: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
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RFP8P10
TB334
TA17511.
O-220AB
AN7254
RFP8P10
TB334
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AN7254
Abstract: AN7260 RFP2N20
Text: RFP2N20 Data Sheet Title FP2 0 bt A, 0V, 00 m, anwer OST) utho July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP2N20
TA09289.
O-220AB
AN7254
AN7260
RFP2N20
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rfp12p10
Abstract: rfp12p08 TB334 FAIRCHILD to220ab package
Text: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
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RFP12P08,
RFP12P10
RFP12P10
TA17511.
rfp12p08
TB334
FAIRCHILD to220ab package
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RFL1N10L
Abstract: AN7254 AN7260
Text: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special
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RFL1N10L
O-205AF
RFL1N10L
AN7254
AN7260
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AN7254
Abstract: AN7260 RFP2N20
Text: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP2N20
TA09289.
O-220AB
AN7254
AN7260
RFP2N20
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AN7254
Abstract: AN7260 RFP15N15 TB334
Text: RFP15N15 Data Sheet January 2002 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
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RFP15N15
TB334
TA09195.
O-220AB
AN7254
AN7260
RFP15N15
TB334
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AN7254
Abstract: AN7260 RFP15N05L RFP15N06L TB334
Text: RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs Features • 15A, 50V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFP15N05L
TA0522.
AN7254
AN7260
RFP15N05L
RFP15N06L
TB334
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Untitled
Abstract: No abstract text available
Text: FDI8442 N-Channel PowerTrench MOSFET 40V, 80A, 2.9mΩ Features Applications ̈ Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A ̈ Automotive Engine Control ̈ Typ Qg(10) = 181nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers
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FDI8442
181nC
FDI8442
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FDB8443
Abstract: No abstract text available
Text: FDB8443 tm N-Channel PowerTrench MOSFET 40V, 80A, 3.0mΩ Features Applications Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8443
142nC
FDB8443
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BUZ72A
Abstract: TA17401 TB334
Text: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ72A
TA17401.
O-220Aopment.
BUZ72A
TA17401
TB334
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BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71
TA9770.
O-220AB
BUZ71 application
BUZ71
TB334
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FDD8444
Abstract: No abstract text available
Text: FDD8444 N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications RDS ON = 4mΩ (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 89nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDD8444
FDD8444
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Untitled
Abstract: No abstract text available
Text: FDD8444 tm N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications ̈ Typ rDS on = 4mΩ at VGS = 10V, ID = 50A ̈ Automotive Engine Control ̈ Typ Qg(10) = 89nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers
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FDD8444
FDD8444
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fdb8444
Abstract: No abstract text available
Text: FDB8444 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications ̈ Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A ̈ Automotive Engine Control ̈ Typ Qg(TOT) = 91nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers
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FDB8444
O-263AB
FDB8444
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FDB8444
Abstract: No abstract text available
Text: FDB8444 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 91nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8444
O-263AB
FDB8444
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alternator diode 35a 12v
Abstract: AN7514 FDP8441
Text: FDP8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Applications Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDP8441
215nC
FDP8441
alternator diode 35a 12v
AN7514
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FDB8441
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ Applications Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8441
215nC
FDB8441
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