samxon GR
Abstract: ce-df dh-bh DFJI
Text: GR R^kb^l RmZg]Zk].ymJ/ FEASTQER 63 Hb`a CU oZen^1 `nZkZgm^^ 7555 akl ehZ] eb_^ Zm =:uC 73 Rnbm _hk nl^ bg ^e^\mkhgb\ \bk\nbml bg \hehnk SU k^\^bo^k1 ob]^h\h]^k ^m\3 cQ]h_^ CBB@V H@Ef cQ]h_^ E@E@V FGBf ROECIFICASINMR Im^f O^k_hkfZg\^ CaZkZ\m^kblmb\l _zo|k~sxq dowzo|k~*|o bkxqo
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BDcg
Abstract: a21b7 B487 GHPM69556 655B
Text: zxrxv -/t}{~{s./,w z{yz +*1w, ,w|s2 x74BC@7A Dlhf[b[am adk Ydgh 6 Efdb @ WcZ 6 Efdb B Ydc\_]ifWh_dcg H PiXb_c_Whif[1 ghWcZWfZ NBA aWmdih H P[Wa[Z HN;< - \ail efdd\ hme[g WjW_aWXa[ H J[WZ Ef[[ WcZ BWZb_ib Ef[[ H 73:IS Z_[a[Yhf_Y ghf[c]h^ .X[hk[[c Yd_a WcZ YdchWYhg/
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x74BC
PcM71
U65555
85SCB17
BDcg
a21b7
B487
GHPM69556
655B
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Electronic Film Capacitors
Abstract: LM3661TL-1.40
Text: max < "L" < > < "T" max Epoxy Dipped Radial Leads < EFC 1613DFR < "S" max Lead Specs. - Tinned Copperweld < Metallized Polycarbonate Capacitors "H" > (All dimensions in millimeters) DIMENSIONS and RATINGS µF 1613DFR-3 63 VDC T H L 1613DFR-3 100 VDC T H L
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1613DFR
1613DFR-3
Electronic Film Capacitors
LM3661TL-1.40
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dfge
Abstract: EFB CD DFGK BCHJ BDDB DKCG
Text: GF R^kb^l 065:uC1 Hb`a Qbiie^ Cnkk^gm.^[D/1 Khp Ifi^]Zg\^.=H>J/ FEASTQER 63 Khp bfi^]Zg\^ _hk ab`a _k^jn^g\r 73 Kb_^ mbf^? 7555t9555 ahnkl Zm 65:uC cQ]h_^ CBB@V H@Ef cQ]h_^ E@E@V FBBf ROECIFICASINMR Im^f O^k_hkfZg\^ CaZkZ\m^kblmb\l _zo|k~sxq dowzo|k~*|o bkxqo
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7555t9555
dfge
EFB CD
DFGK
BCHJ
BDDB
DKCG
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M8X20
Abstract: M10x25 6030v M6X18 5050VD25 3020VD20 10050VD44 2520VD18 4040VD25 M4X10
Text: TYPE VD l v d D H Codice Fibet D H d Mxl Rigidità 45 IRHD daN/mm Rigidità 60 IRHD (daN/mm) Rigidità 70 IRHD (daN/mm) Deflessione statica max. (mm) Item Fibet D H d Mxl Stiffness 45 IRHD (daN/mm) Stiffness 60 IRHD (daN/mm) Stiffness 70 IRHD (daN/mm) Max static
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1008VD10
M4X10
1413VD10
1615VD10
8060VD35
M14X35
8070VD35
M8X20
M10x25
6030v
M6X18
5050VD25
3020VD20
10050VD44
2520VD18
4040VD25
M4X10
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samxon GS
Abstract: dj bk
Text: MEV GD R^kb^l 065:uC1 Hb`a Qbiie^ Cnkk^gm.^[D/1 TemkZ Khp Ifi^]Zg\^.k=H>J/ FEASTQER 63 Khp bfi^]Zg\^ Zm 655dHs 73 EgZ[e^] ab`a kbiie^ \nkk^gm [r Z k^]n\mbhg h_ ERQ Zm ab`a _k^jn^g\r kZg`^3 83 KhZ] eb_^? 65:uC 7555 ahnkl cQ]h_^ JDB@V H@Ef cQ]h_^ CBBB@V CHf
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655dHs
samxon GS
dj bk
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samxon GS
Abstract: CBB 65
Text: MEV GE R^kb^l 065:uC1 Hb`a Qbiie^ Cnkk^gm.^[D/1 Ri^\bZe Khp Ifi^]Zg\^.h=H>J/ FEASTQER 63 Khp bfi^]Zg\^ Zm 655dHs 73 EgZ[e^] ab`a kbiie^ \nkk^gm [r Z k^]n\mbhg h_ ERQ Zm ab`a _k^jn^g\r kZg`^3 83 KhZ] eb_^? 65:uC 7555 ahnkl 93 RnbmZ[e^ _hk O9 fhma^k [hZk] cQ]h_^
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655dHs
samxon GS
CBB 65
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC FILM CAPACITORS, INC. M1206TF Snubber Capacitors Polypropylene 1.625" Min. < >< L + _.050" Oval Wrap and Fill > > + .050" W _ < M1206TF < > T + _ .050" DIMENSIONS and RATINGS M1206TF-3 160VDC/100VAC 250VDC/160VAC M1206TF-3 CAP. µF T H L T H L inches mm
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M1206TF
M1206TF-3
160VDC/100VAC
250VDC/160VAC
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LS 7613
Abstract: No abstract text available
Text: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION T h e K S 8 8 0 5 B is a s u p e rio r lo w p o w e r-p ro g ra m m a b le d u a l fre q u e n c y s y n th e s iz e r P L L w h ic h c a n b e u s e d in h ig h p e rfo rm a n c e C T -1 c o rd le ss p h o n e s y s te m w ith fre q u e n c y ra n g e u n d e r 6 0 M H z in all o v e r th e
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KS8805B
16-SOP-225
16-S0P-225A
LS 7613
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Untitled
Abstract: No abstract text available
Text: D R A W IN G M A D E IN T H I R D A N G L E P R O JE C TIO N T H IS D R A W IN G IS U N P U B L I S H E D . C C o p y r ig h t RESERVED. 19 AMP PRO D UCTS M AY 3 RELEASED by AMP BE COVERED In FOR P U B L IC A T IO N co rpo rated BY U . S . , H AND a r r is b u r g
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V2-81
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Untitled
Abstract: No abstract text available
Text: S6E D HA RR IS S E N I C O N D SE CT OR • 4 3 0 2 27 1 0 0 H 4 3 b 4 422 « H A S HCS374MS H A R R IS SEMICONDUCTOR Radiation Hardened Octal D-Type Flip-Flop, Tri-State, Positive Edge Triggered December 1992 Features -V-^lrCn-U Pinouts • 3 Micron Radiation Hardened SOS CMOS
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HCS374MS
MIL-STD-1835
CDIP2-T20,
05A/cm2
100nm
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i 7555
Abstract: H 7555 DIN 53505 7555 7552 sn 7555
Text: i Ì 6 i 5 NICHT m m SIND p- 4 VERMA55TE NICHT KANTEN MAßSTÄBLICH ÄNDERUNGEN DI E DEM Ì 3 VERTRAULICH TECH N I S C H E N F O R T S C H R I T T DIENEN, B E H A L T E N W I R U N S V OR UNVERÖFFENTLICHTE VORBEHALTEN. NUR NIT ZEICHNUNG. ALLE VERVIELFÄLTIGUNG
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75mm2
AMP-EN-556
i 7555
H 7555
DIN 53505
7555
7552
sn 7555
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Untitled
Abstract: No abstract text available
Text: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors Medium Power Transistor 50V, 0.5A I 2SD1949 / 2SD1484K / 2SC1741AS •Features •Absolute maximum ratinga (Ta=25t) 1 ) H ig h c u r r e n t , ( k — 0 .5 A ) 2 ) L o w V c e (w i >. ( T y p . 0 . 1 V Parameter
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2SD1949
2SD1484K
2SC1741S
2SC3359S
2SC1741AS
2SD1949
2SD1464K
2S01949
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Untitled
Abstract: No abstract text available
Text: D R A W IN G M A D E A l l IN T H I R D A N G L E C o p y r i g h t 19 b y A M P In c o r p o r a te d , H a r r is b u r g , P a . I n t e r n a t io n a l . R ig h t s R e s e r v e d . A M P I n c o r p o r a t e d p r o d u c t s COVERED B Y U . S . AND F O R E IG N P A T E N T S A N d /
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o5/t30
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Untitled
Abstract: No abstract text available
Text: Multimedia ICs Vocal Fader 1C BA3837/BA3837F/BA3838F T h e BA3837, B A 3837F and B A 3838F are ICs with an internal secondary active LPF for vocal cancellation functions and m ixing am plifier functions with high d eg re e s o f vocal cancellation. T h re e control pins are used to switch b e
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BA3837/BA3837F/BA3838F
BA3837,
3837F
3838F
BA3838
00252D7
BA3837/BA3837F/
BA3838F
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N IC F IL M C A P A C IT O R S , IN C . M1206TF Snubber Capacitors Polypropylene Oval Wrap and Fill 1.625" Min. L +.050" 0H M1206TF T W ± .0 5 0 " + .050" DIMENSIONS and RATINGS M1206TF-3 160VDC/100VAC H L M1206TF-3 T 250VDC/160VAC H L CAP.
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M1206TF
M1206TF-3
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74HC240P
Abstract: 74HC240
Text: HB MOTOROLA SC { L O G I C } 02 DE MOTOROLA I t.3L.72S2 □ DflG2ti3 T - 52. - 07 SEMICONDUCTOR TECHNICAL DATA MC54/74HC240 Octal 3-State Inverting Buffer/ Line Driver/Line Receiver High-Performance Silicon-Gate CM OS T h e M C 54/74H C 240 is identical in pinout to the LS 240 . T h e device inputs are
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MC54/74HC240
54/74H
HC241
74HC240P
74HC240
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1208S
Abstract: No abstract text available
Text: SñE J> 7555015 RAPITRON C ORP MIRON 000023b I S l f l H R AM ' T 1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells
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000023b
1208SFRAMÂ
096-Bit
250ns
500ns
1208S
24-Pln)
512x8
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Untitled
Abstract: No abstract text available
Text: Approval Sheet for High Temperature Resistors Metal Film HTM series ±5 % YAGEO CORPORATION H eadquarters: 3F, No.233-1, Pao Chiao R<±, Xindian, Taipei, Taiwan, R.O.C. Tel: 886-2-2917-7555 Fax:886-2-2917-0100 Xindian Plant: 3F, No.5, Lane 560, Chung Cheng Rd., Xindian, Taipei, Taiwan, R.O.C
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ICL7103
Abstract: ICL71C03ACPI l8052 NE 7555 1CL8052 l71c
Text: SEMI COND M3E D SECTOR B 43G5271 DOSbSlö 'F 'S l- I O - O S ICL8052/ICL71C03 ICL8068/ICL71C03 ffj H A R R IS S E M 3 SHAS I C O N D U C T O R Precision 4% Digit A /D Converter GENERAL DESCRIPTION FEATURES T h e 1CL8052 or 1C L8068/IC L71C 03 chip pairs w ith th e ir
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43G5271
1CL8052
L8068/IC
ICL7103
ICL71C03ACPI
l8052
NE 7555
l71c
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7555 ira
Abstract: 5011s
Text: Application Note 3 Driving Halogen Lamps by Brenda Kovacevic Introduction H alo g e n la m p s are p re fe ra b le to in c a n d e s c e n ts in m a ny a p p lic a tio n s d u e to th e ir in c re a s e d b rig h tn e s s a n d long evity. H alo g e n bu lb s are u sed in m a ny v a rie d a p p lic a tio n s , such as:
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MIC5011
IRFZ40
30kil
IN5875
75X/Minute,
I-IRF540
7555 ira
5011s
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hai7555
Abstract: IC ha17555 HA555 ha17555 ic ha17555 7555 low power timer ic multi vibrator circuit HA17555 timer ic HA17555GS HA17555 pulse generator
Text: HA17555G S,H A17555PS,H A17555 ♦P re c is io n Timer H A17555 is an 1C designed f o r a c c u ra te tim e dela y s o r o s c illa tio n s . I t p ro v id e s b o th o f trig g e r te rm in a l a n d reset te rm in a l in o rd e r t o e na ble a w id e scope o f a p p lic a tio n in c lu d in g M o n o
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HA17555GS
HA17555PS
HA17555
HAI7555
NE555
HA17555GS.
HA17555PS
HA17555
100mii
IC ha17555
HA555
ha17555 ic
7555 low power timer ic
multi vibrator circuit
HA17555 timer ic
HA17555 pulse generator
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N IC F IL M C A P A C IT O R S , IN C . MF1206EFR Snubber Capacitors Polypropylene H L + .010"- T + .010" EFC MF1206EFR Lead Specs. Tinned Copperweld H ± .0 1 0 " All cases: 20 AWG I -S + .025"- 1.00 " MIN DIMENSIONS and RATINGS Cap. 1000/350 1250/400 1600/500 2000/560 CASE
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MF1206EFR
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sim 6930
Abstract: T9015 cy 6935 ba2 code
Text: H O LTE K H r HT9015 RF Single Chip for Cordless Phone Features • • • • • O p e ra tin g voltage: 2.7V~6V E x trem e ly low pow er consum ption c u rre n t - Ic c = 0|iA typ. in b a tte ry -sa v in g m ode - Ic c = 7.5m A (typ.) in sta n d b y m ode
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HT9015
T9015
sim 6930
cy 6935
ba2 code
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