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    2SB772-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
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    Amphenol Corporation HSDTFSBFSB7720

    Specialized Cables HSD FSB TO FSB L=7720MM
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    Mouser Electronics HSDTFSBFSB7720
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    H B772 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: B772S PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G  Emitter  Collector  Base H J A D A B C D E F G H J K B K E C Millimeter


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    PDF B772S 10MHz 07-May-2010

    b772s

    Abstract: B772S-R B772 400DA pnp Transistor TO92 5V 200mA
    Text: B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


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    PDF B772S B772S-R B772S-O B772S-Y B772S-GR -10mA, -200mA -100mA, 10MHz b772s B772S-R B772 400DA pnp Transistor TO92 5V 200mA

    B772 equivalent

    Abstract: C817T3-H TRANSISTOR b772 b772 q b772 b772 p BTD8 BTB772T3 BTD882T3 B772 SPECIFICATION
    Text: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics


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    PDF C817T3-H BTB772T3 BTD882T3 BTB772T3/S O-126 UL94V-0 B772 equivalent C817T3-H TRANSISTOR b772 b772 q b772 b772 p BTD8 BTB772T3 BTD882T3 B772 SPECIFICATION

    b772s

    Abstract: BTB772SA3 BTD882SA3
    Text: CYStech Electronics Corp. Spec. No. : C817A3-H Issued Date : 2003.05.31 Revised Date:2004.07.02 Page:1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics


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    PDF C817A3-H BTB772SA3 BTD882SA3 UL94V-0 b772s BTB772SA3 BTD882SA3

    B772 equivalent

    Abstract: b772 to 126 b772 p TRANSISTOR b772 B772 SPECIFICATION pnp b772 BTB772T3S complementary b772 B772 b772 pnp
    Text: CYStech Electronics Corp. Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3/S Features • Low VCE sat , typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics


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    PDF C817T3-H BTB772T3/S BTD882T3/S O-126 UL94V-0 B772 equivalent b772 to 126 b772 p TRANSISTOR b772 B772 SPECIFICATION pnp b772 BTB772T3S complementary b772 B772 b772 pnp

    b772 p

    Abstract: TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR
    Text: CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772I3 BVCEO IC RCESAT -30V -3A 150mΩ Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A


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    PDF C817I3-H BTB772I3 BTD882I3 O-251 Pw350s UL94V-0 b772 p TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR

    B772 P M 24

    Abstract: D551 A642 CD 137 capacitor b774 transistor B772 P 38 A643 B641 A771 A361
    Text: CD 137 PX Series 10 000 h at 85°C longer life CD 136 PK CD 139 BL 105°C 105°C longer life CD 135 BP highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 400 ~ 550 Capacitance Range (µF)


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    PDF 120Hz) M6x12 M5x10 M8x16 CNN30M12 K100-ISO-50 K100-ISO-77 v2006 B772 P M 24 D551 A642 CD 137 capacitor b774 transistor B772 P 38 A643 B641 A771 A361

    b774 transistor

    Abstract: c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643
    Text: CD 138 PC Series 10 000 h at 85°C CD 136 PK longer life CD 139 BL 105°C CD 135 BP 105°C longer life highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)


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    PDF 120Hz) M6x12 M5x10 M8x16 CNN30M12 K100-ISO-50 K100-ISO-77 v2006 b774 transistor c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引(按字母顺序) ALPHANUMERIC INDEX A 产品目录表(按电性能) TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


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    PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

    B772Y

    Abstract: B772-Y B772-GR B772O
    Text: MCC TM Micro Commercial Components B772-R B772-O B772-Y B772-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 1.25Watts of Power Dissipation. Collector-current 3.0A


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    PDF B772-R B772-O B772-Y B772-GR 25Watts -55OC -10mAdc, -100uAdc, B772Y B772-GR B772O

    transistor b722

    Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
    Text: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)


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    PDF O-126 O-126 transistor b722 transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p

    B772 031

    Abstract: B772 marking PNP 200V 2A SOT89 PNP TRANSISTOR "SOT89" marking pr H B772 TRANSISTOR b772 06 sot 89 b772 B772+031
    Text: WILLAS FM120-M B772 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF OT-89 OD-123+ FM1200-M FM120-M OD-123H FM180-MH FM1100-MH FM1150-MH FM1200 118TYP B772 031 B772 marking PNP 200V 2A SOT89 PNP TRANSISTOR "SOT89" marking pr H B772 TRANSISTOR b772 06 sot 89 b772 B772+031

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR( PNP ) TO—126 FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


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    PDF O-126 290TYP 090TYP

    Untitled

    Abstract: No abstract text available
    Text: B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C FEATURES    Low frequency power amplifier High Current Low Speed Switching Emitter


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    PDF B772C O-126C B772C-R B772C-O B772C-Y B772C-GR -10mA, -100mA -200mA

    datasheet d882

    Abstract: b72 voltage regulator B772 TRANSISTOR b72 B772SS D882SS transistor marking 2A H B721
    Text: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES 3 *High current output up to 3A


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    PDF B772SS B772SS D882SS OT-23 QW-R206-017 datasheet d882 b72 voltage regulator B772 TRANSISTOR b72 D882SS transistor marking 2A H B721

    d82 sot23

    Abstract: D882* transistor
    Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23


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    PDF D882SS B772SS OT-23 D882SSL 10sing QW-R206-018 d82 sot23 D882* transistor

    d82 sot23

    Abstract: B772SS D882SS
    Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23


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    PDF D882SS B772SS OT-23 QW-R206-018 d82 sot23 B772SS D882SS

    TRANSISTOR b72

    Abstract: B721
    Text: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES *High current output up to 3A


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    PDF B772SS B772SS D882SS OT-23 QW-R206-017 TRANSISTOR b72 B721

    d82 sot-23

    Abstract: datasheet d882 D882SS MARKING D82 d82 sot23 D882SSL d882* npn transistor d82 diode D882 d882s
    Text: UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES 3 * High current output up to 3A * Low saturation voltage * Complement to B772SS 1 APPLICATIONS 2 SOT-23 * Audio power amplifier * DC-DC convertor * Voltage regulator


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    PDF D882SS B772SS OT-23 D882SSL D882SS D882SSL-x-AE3-R 882SSL-x-AE3-R QW-R206-018 d82 sot-23 datasheet d882 MARKING D82 d82 sot23 D882SSL d882* npn transistor d82 diode D882 d882s

    B72 sot-23

    Abstract: TRANSISTOR b72 B772SS D882SS D882* transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES


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    PDF B772SS B772SS OT-23 D882SS B772SSL B772SS-x-AE3-R B772SSL-x-AE3-R B72 sot-23 TRANSISTOR b72 D882SS D882* transistor

    B43876

    Abstract: B43875 B43991 B41684 B43405 B82727-C1-A1 B43471 B43465 b41876 B43406
    Text: SAW Components Data Sheet B7725, Pb-free SAW Components B7725 Low-Loss Filter 1575,42 MHz Data Sheet Chip Sized SAW Package QCS5H Features 0,1 Low loss RF filter for GPS receivers Unbalanced to balanced operation Low amplitude ripple Impedance transformation from 50 Ω


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    PDF B7725, B7725 B7725 B39162-B7725-K910 C61157-A7-A139 F61074-V8189-Z000 2002/95/EC 2005/747/EC B43876 B43875 B43991 B41684 B43405 B82727-C1-A1 B43471 B43465 b41876 B43406

    B772 equivalent

    Abstract: tf b772
    Text: @ LG Semicon. Co. LTD. Description Features The GMM7328210BS/SG is an 8M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7328210BS/SG is


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    PDF GMM7328210BS/SG 7328210BS/SG GMM7328210BS/SG GMM732821 GMM7328210BSG H0BB757 B772 equivalent tf b772

    ib2c1

    Abstract: sinus generator AN298 DIP28 PLCC28 TDB7711 TDB7722
    Text: rZ 7 ^ 7# T D B 7711 T D B 7722 S G S -T H O M S O N SUBSCRIBER LINE INTERFACE C IR C U IT KIT • PROGRAMM ABLE DC FEEDING RESIS­ TANCE AND LIMITING CURRENT seven values ■ LONGITUDINAL BALANCE PERFORM ANCE : UP TO 63 dB ■ FOUR OPERATING MODES (power-down,


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    PDF TDB7711 TDB7722 TDB7711-TDB7722 H8BTDB7711-12 ib2c1 sinus generator AN298 DIP28 PLCC28 TDB7711 TDB7722

    b772 q

    Abstract: B772 031 br b772 B772 BR 8772 H B772 CA 8772 transistor b772 B772 C S transistor 8772
    Text: TO-126 Plastic-Encapsulate Transistors^ B772 TRANSISTO R PNP F EATURES Power dissipation TO-126 1.25W (Tamb=25°C) P cm; C o llecto r current 1 .E M IT T E R I cm ; -3 A 2 .COLLECTOR -base voltage 3 . BASE V(BR)CBO: -4 0 V O perating and storage ju n ctio n tem perature range


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    PDF O-126 O-126 b772 q B772 031 br b772 B772 BR 8772 H B772 CA 8772 transistor b772 B772 C S transistor 8772