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    H11AV1 APPLICATION Search Results

    H11AV1 APPLICATION Result Highlights (5)

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    H11AV1 APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H11AV1

    Abstract: H11AV2 H11AV1A H11AV2A h11av2 equivalent H11AV1 Application 730A-04 8UA18
    Text: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA H11AV1,A* H11AV2,A [CTR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 50% Min] *Motorola Preferred Devices The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared


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    PDF H11AV1/D H11AV1 H11AV2 H11AV1/D* H11AV1A H11AV2A h11av2 equivalent H11AV1 Application 730A-04 8UA18

    H11AV2

    Abstract: H11AV1A H11AV1M
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


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    PDF H11AV1 H11AV2 P01101866 CR/0117 E90700, H11AV1A H11AV1M

    H11AV1A

    Abstract: H11AV1 H11AV2 H11AV2A h11av2 equivalent
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


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    PDF H11AV1 H11AV2 H11AV1A H11AV2A h11av2 equivalent

    H11AV1

    Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


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    PDF H11AV1 H11AV2 H11AV2SR2V-M H11AV2SV-M P01101866 CR/0117 E90700, H11AV1A H11AV2A H11AV1M

    h11av2 equivalent

    Abstract: H11AV1A-M H11AV1-M H11AV1S-M H11AV2 H11AV2A H11AV2A-M H11AV2-M H11AV2S-M H11AV1
    Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION


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    PDF H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M H11AV1S-M, H11AV2S-M H11AV1-M, H11AV1A-M, h11av2 equivalent H11AV1A-M H11AV1-M H11AV1S-M H11AV2 H11AV2A H11AV2A-M H11AV2-M H11AV2S-M H11AV1

    H11AV2 8360

    Abstract: H11AV1 Application H11AV1A H11AV1-M H11AV1SV-M h11av2 equivalent H11AV2A H11AV1 H11AV1A-M H11AV1S-M
    Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION


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    PDF H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M H11AV1S-M, H11AV2S-M H11AV1-M, H11AV1A-M, H11AV2 8360 H11AV1 Application H11AV1A H11AV1-M H11AV1SV-M h11av2 equivalent H11AV2A H11AV1 H11AV1A-M H11AV1S-M

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION


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    PDF H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M H11AV1S-M, H11AV2S-M H11AV1-M, H11AV1A-M,

    h11av2 equivalent

    Abstract: E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X BSI approved - Certificate No. 8001
    Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form


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    PDF H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 E91231 EN60950 P01102464 FI18166 h11av2 equivalent E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X BSI approved - Certificate No. 8001

    E91231

    Abstract: H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X
    Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following


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    PDF H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 E91231 EN60950 P96101299 H11AV E91231 H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X

    BSI approved - Certificate No. 8001

    Abstract: No abstract text available
    Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form


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    PDF H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 E91231 EN60950 P01102464 FI18166 BSI approved - Certificate No. 8001

    smd transistor 662

    Abstract: h11av2 equivalent H11AV3 E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3X
    Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS z z VDE 0884 in 3 available lead form : - STD - G form


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    PDF H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 E91231 EN60950 P01102464 H11AV smd transistor 662 h11av2 equivalent H11AV3 E91231 H11AV1 H11AV1X H11AV2 H11AV2X H11AV3X

    SMD 6 PIN IC

    Abstract: h11av2 equivalent E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X
    Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following


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    PDF H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 E91231 EN60950 P96101299 H11AV SMD 6 PIN IC h11av2 equivalent E91231 H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X

    H11AV1

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices


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    PDF H11AV1/D H11AV1 11AV2 H11AV2

    H11AV1A

    Abstract: H11AV2A AV2A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® ® ® ® C8A 8ET1 SEMKO DEMKO NEMKO BABT H11AV1.A* H11AV2,A [CTR X100% Min GlobalOptoisolator 6-Pln DIP Optoisolators Transistor Output [CTR » 60% Min] ’ Motorola Preferred Devices The H11AV1 ,A and H11 AV2.A devices consist of a gallium arsenide infrared


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    PDF H11AV1 H11AV1 H11AV2 H11AV1A H11AV2A AV2A

    H11AV3

    Abstract: H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2
    Text: MOTOROLA B SEM ICONDUCTOR TECHNICAL DATA H11AV1,A H11AV2,A H11AV3,A 6-Pin D IP O p to iso la to rs T ransisto r Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. •


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    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, IEC204/VDE0113, VDE0160, VDE0832, VDE0833, circuit54 H11AV3 H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2

    1AV3A

    Abstract: No abstract text available
    Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting


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    PDF 74bbfl51 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A 1AV3A

    H11AV1A

    Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
    Text: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared


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    PDF 3fl750fll 0an70fa 0730-2P. H11AV1A, 11AV2A 11AV3A H11AV2 H11AV3. H11AV1, H11AV2, H11AV1A H11AV1 H11AV3 H11AV2A H11AV3A 0730-2P

    1AV3A

    Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
    Text: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State H11AV series consists of a gallium arsenide, infrared


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    PDF H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV2 1AV3A H11AV1A H11AV1 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a

    eh11a

    Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
    Text: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line


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    PDF H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV3A eh11a 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 0730-2P 11AV2

    H11AV2A

    Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
    Text: Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I IAV series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line


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    PDF H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T

    H11AV1A harris

    Abstract: H11AV2A
    Text: HARRI S SEMI COND 37E SECTOR 43G2271 D D G2 7 1 b ô 2 I HAS optoelectronic speculations- T -H Î-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a A s In f ra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r


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    PDF 43G2271 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. 92CS-42662 92CS-429S1 H11AV1A harris H11AV2A

    H11AV1

    Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
    Text: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs


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    PDF b3b725S H11AV1 H11AV2 H11AV3 H11AV3A H11AV1A H11AV2A H11AV3A diode b3l

    aiou

    Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.


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    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, IEC204/VDE0113 30A-02 730D-02 aiou H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176

    ISTS201

    Abstract: ISTS2001 IS1020 MOC 4N35 IS1100 ists824 IQ4000 triac catalogue MOC 4N25 M003040
    Text: IS0C0I1 COMPONENTS LTD i»5E D Bi MflflbSlQ 0000232 5 • ISO f'L{ |-tf3 Zero Crossing Triac Couplers Single Channel DIP, Zero Voltage Crossing Triac Part Number Features Input Trigger Current V T M *3 V MAX mA MOC3031 15 MOC3032 10 MOC3041 MOC3042 Continuous


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    PDF MOC3030 MOC3031 MOC3032 M003040 MOC3041 MOC3042 IS620 IS621 IS622 IS623 ISTS201 ISTS2001 IS1020 MOC 4N35 IS1100 ists824 IQ4000 triac catalogue MOC 4N25