H11AV1
Abstract: H11AV2 H11AV1A H11AV2A h11av2 equivalent H11AV1 Application 730A-04 8UA18
Text: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA H11AV1,A* H11AV2,A [CTR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 50% Min] *Motorola Preferred Devices The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared
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H11AV1/D
H11AV1
H11AV2
H11AV1/D*
H11AV1A
H11AV2A
h11av2 equivalent
H11AV1 Application
730A-04
8UA18
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H11AV2
Abstract: H11AV1A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
P01101866
CR/0117
E90700,
H11AV1A
H11AV1M
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H11AV1A
Abstract: H11AV1 H11AV2 H11AV2A h11av2 equivalent
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
H11AV1A
H11AV2A
h11av2 equivalent
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H11AV1
Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
H11AV2SR2V-M
H11AV2SV-M
P01101866
CR/0117
E90700,
H11AV1A
H11AV2A
H11AV1M
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h11av2 equivalent
Abstract: H11AV1A-M H11AV1-M H11AV1S-M H11AV2 H11AV2A H11AV2A-M H11AV2-M H11AV2S-M H11AV1
Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION
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H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
H11AV1S-M,
H11AV2S-M
H11AV1-M,
H11AV1A-M,
h11av2 equivalent
H11AV1A-M
H11AV1-M
H11AV1S-M
H11AV2
H11AV2A
H11AV2A-M
H11AV2-M
H11AV2S-M
H11AV1
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H11AV2 8360
Abstract: H11AV1 Application H11AV1A H11AV1-M H11AV1SV-M h11av2 equivalent H11AV2A H11AV1 H11AV1A-M H11AV1S-M
Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION
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H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
H11AV1S-M,
H11AV2S-M
H11AV1-M,
H11AV1A-M,
H11AV2 8360
H11AV1 Application
H11AV1A
H11AV1-M
H11AV1SV-M
h11av2 equivalent
H11AV2A
H11AV1
H11AV1A-M
H11AV1S-M
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION
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H11AV1-M
H11AV1A-M
H11AV2-M
H11AV2A-M
H11AV1S-M,
H11AV2S-M
H11AV1-M,
H11AV1A-M,
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h11av2 equivalent
Abstract: E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X BSI approved - Certificate No. 8001
Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form
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H11AV1X,
H11AV2X,
H11AV3X
H11AV1,
H11AV2,
H11AV3
E91231
EN60950
P01102464
FI18166
h11av2 equivalent
E91231
H11AV
H11AV1
H11AV1X
H11AV2
H11AV2X
H11AV3
H11AV3X
BSI approved - Certificate No. 8001
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E91231
Abstract: H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X
Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following
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H11AV1X,
H11AV2X,
H11AV3X
H11AV1,
H11AV2,
H11AV3
E91231
EN60950
P96101299
H11AV
E91231
H11AV1
H11AV1X
H11AV2
H11AV2X
H11AV3
H11AV3X
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BSI approved - Certificate No. 8001
Abstract: No abstract text available
Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form
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H11AV1X,
H11AV2X,
H11AV3X
H11AV1,
H11AV2,
H11AV3
E91231
EN60950
P01102464
FI18166
BSI approved - Certificate No. 8001
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smd transistor 662
Abstract: h11av2 equivalent H11AV3 E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3X
Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS z z VDE 0884 in 3 available lead form : - STD - G form
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H11AV1X,
H11AV2X,
H11AV3X
H11AV1,
H11AV2,
H11AV3
E91231
EN60950
P01102464
H11AV
smd transistor 662
h11av2 equivalent
H11AV3
E91231
H11AV1
H11AV1X
H11AV2
H11AV2X
H11AV3X
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SMD 6 PIN IC
Abstract: h11av2 equivalent E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X
Text: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following
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H11AV1X,
H11AV2X,
H11AV3X
H11AV1,
H11AV2,
H11AV3
E91231
EN60950
P96101299
H11AV
SMD 6 PIN IC
h11av2 equivalent
E91231
H11AV1
H11AV1X
H11AV2
H11AV2X
H11AV3
H11AV3X
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H11AV1
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices
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H11AV1/D
H11AV1
11AV2
H11AV2
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H11AV1A
Abstract: H11AV2A AV2A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® ® ® ® C8A 8ET1 SEMKO DEMKO NEMKO BABT H11AV1.A* H11AV2,A [CTR X100% Min GlobalOptoisolator 6-Pln DIP Optoisolators Transistor Output [CTR » 60% Min] ’ Motorola Preferred Devices The H11AV1 ,A and H11 AV2.A devices consist of a gallium arsenide infrared
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H11AV1
H11AV1
H11AV2
H11AV1A
H11AV2A
AV2A
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H11AV3
Abstract: H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2
Text: MOTOROLA B SEM ICONDUCTOR TECHNICAL DATA H11AV1,A H11AV2,A H11AV3,A 6-Pin D IP O p to iso la to rs T ransisto r Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
IEC204/VDE0113,
VDE0160,
VDE0832,
VDE0833,
circuit54
H11AV3
H11AV1A
H11AV2A
H11AV3A
AN978
VDE0160
VDE0832
VDE0833
H11AV2
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1AV3A
Abstract: No abstract text available
Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting
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74bbfl51
H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
1AV3A
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H11AV1A
Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
Text: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared
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3fl750fll
0an70fa
0730-2P.
H11AV1A,
11AV2A
11AV3A
H11AV2
H11AV3.
H11AV1,
H11AV2,
H11AV1A
H11AV1
H11AV3
H11AV2A
H11AV3A
0730-2P
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1AV3A
Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
Text: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State H11AV series consists of a gallium arsenide, infrared
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H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
H11AV2
1AV3A
H11AV1A
H11AV1
H11AV3
H11AV3A
1av3
0730-2P
ic 5304 1a
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eh11a
Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
Text: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line
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H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
H11AV3A
eh11a
1AV Series
H11AV1A
H11AV1
H11AV2
H11AV3
0730-2P
11AV2
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H11AV2A
Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
Text: Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I IAV series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line
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H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
h11av2
H11AV1A harris
H11AV1
H11AV3
H11AV1A
H11AV3A
0730-2P
H11AV3T
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H11AV1A harris
Abstract: H11AV2A
Text: HARRI S SEMI COND 37E SECTOR 43G2271 D D G2 7 1 b ô 2 I HAS optoelectronic speculations- T -H Î-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a A s In f ra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r
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43G2271
H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
92CS-42662
92CS-429S1
H11AV1A harris
H11AV2A
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H11AV1
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Text: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs
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b3b725S
H11AV1
H11AV2
H11AV3
H11AV3A
H11AV1A
H11AV2A
H11AV3A
diode b3l
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aiou
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
IEC204/VDE0113
30A-02
730D-02
aiou
H11AV2
H11AV3
H11AV1A
H11AV2A
H11AV3A
ge h11a
transistor BC 176
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ISTS201
Abstract: ISTS2001 IS1020 MOC 4N35 IS1100 ists824 IQ4000 triac catalogue MOC 4N25 M003040
Text: IS0C0I1 COMPONENTS LTD i»5E D Bi MflflbSlQ 0000232 5 • ISO f'L{ |-tf3 Zero Crossing Triac Couplers Single Channel DIP, Zero Voltage Crossing Triac Part Number Features Input Trigger Current V T M *3 V MAX mA MOC3031 15 MOC3032 10 MOC3041 MOC3042 Continuous
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MOC3030
MOC3031
MOC3032
M003040
MOC3041
MOC3042
IS620
IS621
IS622
IS623
ISTS201
ISTS2001
IS1020
MOC 4N35
IS1100
ists824
IQ4000
triac catalogue
MOC 4N25
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