H7N0401LS Search Results

H7N0401LS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H7N0401LS		Renesas Technology	Silicon N Channel MOS FET		Original	PDF
H7N0401LS		Renesas Technology	MOSFET, Switching; VDSS (V): 40; ID (A): 95; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.0031; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0048]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 9300; toff ( us) typ: 0.13; Package: LDPAK (S)- (1)		Original	PDF

H7N0401LS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Hitachi DSA00280 Abstract: No abstract text available Text: H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1527C Z 4th. Edition May 2002 Features • Low on-resistance RDS(on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline LDPAK 4 4 4 D	Original	PDF	H7N0401LD, H7N0401LS, H7N0401LM ADE-208-1527C H7N0401LS H7N0401LD Hitachi DSA00280
H7N0401LD Abstract: H7N0401LD-E H7N0401LM H7N0401LS PRSS0004AE-A PRSS0004AE-C Text: H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1129-0500 Previous: ADE-208-1527C Rev.5.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching	Original	PDF	H7N0401LD, H7N0401LS, H7N0401LM REJ03G1129-0500 ADE-208-1527C) PRSS0004AE-A PRSS0004AE-B H7N0401LD H7N0401LS PRSS0004AE-C H7N0401LD H7N0401LD-E H7N0401LM H7N0401LS PRSS0004AE-A PRSS0004AE-C
H7N0401LD Abstract: H7N0401LD-E H7N0401LM H7N0401LS PRSS0004AE-A PRSS0004AE-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
H7N0401LD Abstract: H7N0401LM H7N0401LS Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	PDF	D-85622 D-85619 H7N0401LD H7N0401LM H7N0401LS
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009