gu4 lamp base
Abstract: H973 length H9941-515 GZ6.35 395M 18 awg lampholder wire
Text: 4mm Base Lampholders H9941 Lamp Base Holder Maximum Ratings G-4, GU4 GZ4 MR-11 Ceramic 50 Volts 10 Amps 230°C Wire 18 AWG Stranded Teflon Insulation 140mm Wire Length H9941-515 510mm Wire Length H9941-M3 M-3 Threaded Mounting Inserts H9941-M3-395 M-3 Threaded
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H9941
MR-11)
140mm
H9941-515
510mm
H9941-M3
H9941-M3-395
395mm
HX814
HX983
gu4 lamp base
H973
length
H9941-515
GZ6.35
395M
18 awg
lampholder
wire
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6926DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6926DQ
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FDW2501NZ
Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2501NZ
FDW2501NZ
2501NZ
DIODE marking S4 06
2502P
CBHK741B019
F63TNR
FDW2502P
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2506p
Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2506P
2506p
diode s4 53a
2506p marking
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2506P
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
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MOSFET TSSOP-8
Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
MOSFET TSSOP-8
2502P
2507N
CBHK741B019
F63TNR
FDW2502P
FDW2507N
Fairchild MOSFET TSSOP-8 dual n-channel
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DIODE S4 75a
Abstract: No abstract text available
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
DIODE S4 75a
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Si6435DQ
Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6435DQ
2502P
CBHK741B019
F63TNR
FDW2502P
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FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW252P
Text: FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW252P
FDW2502P
2502P
CBHK741B019
F63TNR
FDW252P
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Untitled
Abstract: No abstract text available
Text: HMC994LP5E v01.0314 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Typical Applications Features The HMC994LP5E is ideal for: P1dB Output Power: +27 dBm • Test Instrumentation Psat Output Power: +29 dBm • Microwave Radio & VSAT
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HMC994LP5E
HMC994LP5E
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Untitled
Abstract: No abstract text available
Text: HMC994LP5E v00.0512 Amplifiers - lineAr & power - smT GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Typical Applications Features The HmC994lp5e is ideal for: p1dB output power: +27 dBm • Test Instrumentation psat output power: +29 dBm • Microwave Radio & VSAT
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HMC994LP5E
HMC994LP5E
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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DIODE marking S4 06
Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Text: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDW6923
DIODE marking S4 06
MOSFET TSSOP-8
S4 DIODE schottky
2502P
CBHK741B019
F63TNR
FDW2502P
FDW6923
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a
Text: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6966DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6966DQ
Diode S4 55a
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Untitled
Abstract: No abstract text available
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
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Untitled
Abstract: No abstract text available
Text: FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW258P
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Untitled
Abstract: No abstract text available
Text: FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDW262P
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2502P
Abstract: 2503N CBHK741B019 F63TNR FDW2502P FDW2503N
Text: FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2503N
2502P
2503N
CBHK741B019
F63TNR
FDW2502P
FDW2503N
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l9938
Abstract: K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 2000 TABLE OF CONTENTS Section I: Introduction Section II:
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H73235
H73622
H73101
T13716
H74016G
79RV364Y
71V432VF
70V9289Y
723631Z
70914Y
l9938
K9950
h9940
l9923
L9939
l9940
z9936
z9939
l9934
PQFP208 drawing
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FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW2520C
Text: FDW2520C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FDW2520C
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2520C
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Untitled
Abstract: No abstract text available
Text: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6953DQ
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Untitled
Abstract: No abstract text available
Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
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FDW2508P
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Untitled
Abstract: No abstract text available
Text: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6467DQ
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Diode S4 55a
Abstract: No abstract text available
Text: FDW2503NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2503NZ
Diode S4 55a
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