h9y se
Abstract: No abstract text available
Text: SSI 32R2100R/2101R/2102R 10 Channel Thin Film Read/Write Devices October 1995 FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver,
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32R2100R/2101R/2102R
32R2100R/2101R/2102R
32R2100/
32R2100R
36-Lead,
10-Channel
h9y se
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DIODE H5X
Abstract: diode zd 33 DIODE H5y diode zd 12
Text: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current
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10-CHANNEL,
10-Channel
44-lead
36-lead
28-Lead
DIODE H5X
diode zd 33
DIODE H5y
diode zd 12
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Untitled
Abstract: No abstract text available
Text: SSI 32R2028R ¿¡lim systems' 5V, 10-Channel Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2028R is a bipolar monolithic integrated circuits designed for use with two-terminal recording heads. It provides a low noise read amplifier, write
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32R2028R
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Untitled
Abstract: No abstract text available
Text: SSI 32R2010R 10-Channel Thin Film Read/Write Device m cm M Îm s A dvance Inform ation July, 1990 FEATURES DESCRIPTION The SSI 32R2010R is an integrated read/write circuit designed for use with non-center tapped thin film heads in disk drive systems. Each chip controls ten
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32R2010R
32R2010R
44-pin
10-Channel
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diode zd 33
Abstract: yy12
Text: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum
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10-CHANNEL,
50V/V
200nH
10OmV,
10MHz
600nH,
diode zd 33
yy12
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PDF
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H13Y
Abstract: HD12X
Text: ^ VTC1nc y jr jE S ; . V M 313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • High Performance: - Read mode gain = 250V/V - Low input noise = 0.8nV/VRz maxim um
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14-CHANNEL,
50V/V
200nH
100mV,
10MHz
600nH,
H13Y
HD12X
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PDF
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H13Y
Abstract: No abstract text available
Text: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low
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32R5281R
14-Channel
32R5281R
700ii
H13Y
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PDF
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H13Y
Abstract: No abstract text available
Text: V M 5200 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 |iH Head - Input Capacitance = 15 pF Typical - Input Noise = 0.52 nV/VHi Typical - Head Inductance Range = 0 .2 -1 .5 |iH
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20-CHANNEL,
5W12V
20-Channels,
VM5200
V/12V
5S425,
V/12V
H13Y
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PDF
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VM312
Abstract: DIODE H5y VM312-8PMJ VM3128
Text: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum
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VM312
10-CHANNEL,
50V/V
200nH
32R512
34-lead
VM3129PMJ
28-Lead
VM3126SSJ
10-Channel
VM312
DIODE H5y
VM312-8PMJ
VM3128
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PDF
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Untitled
Abstract: No abstract text available
Text: SSI 32R5161R 1 Swmswfcms 10-Channel Ferrite/MIG Read/Write Device A TDK Group/Company September 1992 DESCRIPTION FEATURES The SSI 32R5161R is a bipolar monolithic integrated circuit designed for use with a center-tapped ferrite or MIG recording heads. The SSI 32R5161R offers the
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32R5161R
10-Channel
32R511
32R5161R-10CM
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PDF
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400284
Abstract: 3104d 32R2100RU IW671
Text: m m M b n s S S I 3 2 R 2 1 O O R /210 1 R 10 Channel Thin Film Read/Write Devices ' A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES 5V ±10%, 12V ±10% supply The SSI 32R2100R/2101R are BiCMOS monolithic integrated circuits designed for use with two-terminal
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32R2100R/2101R
32R2100/2101
001CH71
400284
3104d
32R2100RU
IW671
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PDF
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32R2102R
Abstract: 32r2100ru10
Text: SSI 32R2100R/2101R/2102R m m 10 Channel Thin Film Read/Write Devices s u s b n s A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low
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32R2100R/2101R/2102R
32R2100R/2101R/2102R
32R2100/
powR2101RU-10CM
32R2102RU-10CM
32R2100RU-10
32R2101RU-10
32R2102RU-10
3B-21
32R2102R
32r2100ru10
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PDF
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Untitled
Abstract: No abstract text available
Text: SSI 32R2010R wmsuskms 10-Channel Thin Film Read/Write Device A TDK Group/Company Preliminary Data January 1993 FEATURES DESCRIPTION The SSI 32R2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of
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32R2010R
10-Channel
32R2010R
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PDF
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Untitled
Abstract: No abstract text available
Text: w m sitsfm SSI 32R2028R 5V, 10-Channel Thin-Film Read/Write Device • A TDK Group/Company Advance Information December 1993 DESCRIPTION FEATURES The SSI 32R2028R is a bipolar monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write
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10-Channel
32R2028R
32R2028R
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PDF
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32R2020R
Abstract: No abstract text available
Text: SSI 32R2020R/2021R cmmsusbtis 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device A TDK Group/Company January 1993 DESCRIPTION FEATURES The SSI 32R2020R/2021R are bipolar monolithic inte grated circuits designed for use with two-terminal re cording heads. They provide a low noise read ampli
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32R2020R/2021R
10-Channel
32R2020R/2021R
36-Pin
20-Pin
32R2020R
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PDF
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32R2010R
Abstract: 32R2010R-CM
Text: SSI 32R2010R ¿monsystems 10-Channel Thin Film Read/Write Device A TDK GroupICompany December 1993 DESCRIPTION FEATURES The SSI 32R2010R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of
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32R2010R
10-Channel
32R2010R
300i2
10-channel,
36-pin
36-lead
32R2010R-CM
32R2010R-10CM
32R2010R-CM
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PDF
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32R2020R
Abstract: 32R2020R-4CL 32R2020 32R2020R-4CV 32R2021R-4CV 32R2020R-6CV 32R2020R4CV
Text: SSI 32R2020R/2021R ¿mmsitskms 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device A TDK G ro u p /c o m p a n y' January 1993 DESCRIPTION FEATURES The SSI 32R2020R/2021R are bipolar monolithic inte grated circuits designed for use with two-terminal re
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32R2020R/2021R
10-Channel
32R2020R/2021R
com2020R-2CL
32R2020R-2CN
32R2020R-2CL
32R2020R
32R2020R-4CL
32R2020
32R2020R-4CV
32R2021R-4CV
32R2020R-6CV
32R2020R4CV
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PDF
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Untitled
Abstract: No abstract text available
Text: SSI 32R2100R/2101R/2102R M M M k m 10 Channel Thin Film Read/Write Devices s A TDK Group /Company October 1995 DESCRIPTION FEATURES The SSI 32R2100R/2101R/2102R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low
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32R2100R/2101R/2102R
32R2100R/2101R/2102R
250ft
32R2100/
sequenci10CM
32R2101RU-10CM
32R2102RU-10CM
32R2100RU-10
32R2101RU-10
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PDF
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sol 44
Abstract: H13Y
Text: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They
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32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H13Y
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PDF
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1HS1
Abstract: No abstract text available
Text: VM7800 A V T C In c. Value the C u sto m e rr* 4, 6, OR 10-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER WITH MULTIPLE SERVO WRITE CAPABILITY August, 1995 DESCRIPTIO N The VM7800 is a high-performance read/write preamplifier designed for use in high-end disk drives. It provides write cur
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VM7800
10-CHANNEL,
55nV/ViHz
VM7856
36-lead
VM78510
10-Channel
1HS1
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PDF
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H13Y
Abstract: 5121R H13V
Text: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
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32R5121/5121R
14-Channel
32R5121/5121R
H13Y
5121R
H13V
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PDF
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32R201
Abstract: DDD1421
Text: SSI 32R2011R mmsvskms 10-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information December 1993 DESCRIPTION FEATURES The SSI 32R2011R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains up to ten channels of
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32R2011R
10-Channel
32R2011R
10-channel,
36-pin
32R201
DDD1421
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PDF
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Untitled
Abstract: No abstract text available
Text: r a * 8 VM5200 í % A-A# V T C In c . l/a/ue ífte Cusióme/- 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August,1997 FEATU R ES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 nH Head - Input Capacitance = 15 pF Typical
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VM5200
20-CHANNEL,
VM5200
646362S1605958575655545352515049
5S57565554535.
5r5049'
14-Channel
64-lead
17181920212223242526272829X3132/
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PDF
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sol 44
Abstract: H11Y
Text: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi
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00Qb477
32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H11Y
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PDF
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