UPC8236
Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ39V0PF
UPC8236
2SC5508
NE3512S02
digital tv tuner
hjfet
NESG240033
SW SPDT
NE5510279A
antenna for microwave CATV materials
ANTENNA parabolic
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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NE5510279A
Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is
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NESG3031M14
Abstract: NESG3031M14-T3
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
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NESG3031M14
NESG3031M14-T3
NESG3031M14
NESG3031M14-T3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3032M14
NESG3032M14
NESG3032M14-A
NESG3032M14-T3
NESG3032M14-T3-A
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NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M14
NESG3031M1conductor
NEC JAPAN
NESG3031M14
NESG3031M14-T3
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transistor marking T1k ghz
Abstract: MARKING T1K NESG3031M05 NESG3031M05-T1 ZL 58 transistor marking T1k
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
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NESG3031M05
NESG3031M05-T1
transistor marking T1k ghz
MARKING T1K
NESG3031M05
NESG3031M05-T1
ZL 58
transistor marking T1k
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1658 NEC
Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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PX10020EJ08V0PF
1658 NEC
SW SPDT
FRS transceiver
SW-SPDT
upc8112tb
2SC5288
NE52418
RF basics
NE5510279A
discrete LNA D
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2012 NEC
Abstract: transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
2012 NEC
transistor marking T1k ghz
nec 2012
NESG3031M05
NESG3031M05-T1
MARKING T1K
transistor marking T1k
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NESG220033
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG220033
NESG220033
NESG220033-A
M8E0904E
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R7A marking
Abstract: NESG240033
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG240033
NESG240033
NESG240033-A
M8E0904E
R7A marking
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NESG3033M14
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3033M14
NESG3032M14.
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
PU10640EJ01V0DS
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HBT transistor s parameters measures
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG210833
NESG210833
NESG210833-A
M8E0904E
HBT transistor s parameters measures
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nec 2501
Abstract: NESG240034 ic nec 2501 2501 nec
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG240034
NESG240034
NESG240034-A
M8E0904E
nec 2501
ic nec 2501
2501 nec
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NESG3032M14
Abstract: NEC ROHS COMPLIANT HBT transistor s parameters measures nec rohs marking
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3032M14
NESG3032M14-A
NESG3032M14
NEC ROHS COMPLIANT
HBT transistor s parameters measures
nec rohs marking
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NEC ROHS COMPLIANT
Abstract: NEC PART NUMBER MARKING NESG3032M14 NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3033M14
NESG3032M14.
NESG3033M14-A
NEC ROHS COMPLIANT
NEC PART NUMBER MARKING
NESG3032M14
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
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NESG3031M05
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG3031M05
NESG3031M05-T1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M14
NESG3031M14
NESG3031M14-T3
NESG3031M14-A
NESG303ntrol
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
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NESG3031M14
NESG3031M14
NESG3031M14-T3
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NESG3031M14
Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M14
NESG3031M14-A
NESG3031M14-T3
NESG3031M14
NESG3031M14-A
NESG3031M14-T3-A
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NESG3031M05-T1
Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M05
NESG3031M05-T1
transistor marking T1k ghz
NESG3031M05
NESG3031M05-A
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NESG3031M05-T1-A
Abstract: NESG3031M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG3031M05
NESG3031M05-T1-A
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NESG3031M14
Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M14
NESG3031M14-A
NESG30NEC
NESG3031M14
NESG3031M14-A
NESG3031M14-T3
NESG3031M14-T3-A
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