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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.	Original	HE6267 H2N3417 H2N3417 183oC 217oC 260oC	PDF
diode marking H2 Abstract: H2N7000 Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching	Original	HE6267 H2N7000 H2N7000 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2	PDF
H2N7000 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.	Original	HE6267 H2N7000 H2N7000	PDF
1902 transistor Abstract: H2N3417 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.	Original	HE6267-B H2N3417 H2N3417 1902 transistor	PDF