Untitled
Abstract: No abstract text available
Text: HE8403ML-Infrared Emitting Diodes IRED Description H E 8 4 0 JM L is a 0.8 f i m G aA IA s infrared e m it ting d iode w ith d o u b le h eterojunction stru ctu re, w hich provides high speed response. Optical o u tp u t from the chip is directed to the
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HE8403ML----Infrared
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Untitled
Abstract: No abstract text available
Text: HITACHI/tOPTOELECTRONICS S4E T> m MMTbEQS DG121b7 ÛMT • HE8403SG/ML/TR_ GaAIAs IRED The HE8403SG/ML/TR are 0.8 nm band infrared light emitting diodes for use as the light sources in opti cal fiber communications. They provide a high speed response due to their double heterojunction GaAIAs structure.
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DG121b7
HE8403SG/ML/TR_
HE8403SG/ML/TR
HE8403SG/ML/TR
T-41-i;
HE8403ML)
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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HE8403ML
Abstract: No abstract text available
Text: HE8403SG/ML GaAIAs IRED Description The HE8403SG/M L are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance
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HE8403SG/ML
HE8403SG/M
HE8403SG:
HE8403ML:
HE8403ML)
HE8403ML
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laser diode 780 nm
Abstract: HE8403ML
Text: Part Numbers 1. Hitachi optoelectronic device part numbers indicate the following: !-!□□□□□[]□ Package type Chip structure, characteristics Emitting wavelength Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type ' Laser diode: L Infreared emitting diode: E
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HE8403ML
laser diode 780 nm
HE8403ML
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Untitled
Abstract: No abstract text available
Text: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance
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HE8403SG/ML
HE8403SG/ML
HE8403SG:
HE8403ML:
HE8403ML)
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