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    HI649A

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 1/3 HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C


    Original     		PDF HE9003 HI649A HI649A O-251

    transistor mark code H1

    Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


    Original     		PDF HE9003 HI649A HI649A O-251 183oC 217oC 260oC transistor mark code H1 A1 marking code amplifier y2 marking marking Y1 transistor