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    HEP TRANSISTORS Search Results

    HEP TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HEP TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMILL

    Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector
    Text: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision


    Original     		PDF 10MRAD D-85386 I-20157 DMILL RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector

    DMILL

    Abstract: nuclear radiation detector Higgs 3 microprocessor radiation hard Neutron Radiation Detector Bipolar Junction Transistor npn LHC HEP transistors 10MRAD
    Text: 2 rad s/cm M 10 utron 14 ne 10 DMILL mixed analog/digital Radiation Hard BiCMOS An emerging need in HEP The decision to develop new equipment for High Energy Physics HEP research has lead to the need for ultra hard technology. The detector electronics adjacent to proton collision areas can accumulate radiation doses


    Original     		PDF

    OPA03

    Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
    Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in


    Original     		PDF

    OPA03

    Abstract: OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation
    Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in


    Original     		PDF 4169B OPA03 OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation

    2N5141

    Abstract: No abstract text available
    Text: , Lf nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TYPES 2N4998, 2N5000, 2NS148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY


    Original     		PDF 2N4998, 2N5000, 2NS148, 2N5150 2N4999 2N5001, 2N5147, 2N6149 2N40M 2N514Â 2N5141

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    2n2222 itt

    Abstract: 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84 2N2218A
    Text: ITT Semiconductors NPN Transistors N P N S ilicon M edium Current Transistors Metal Can TO-39 or TO-18 . V CBo up to 75V. O u tlin e D raw ing H o. 66 ap plies fo r TO -39 ty p es . O u tlin e D raw ing N o. 65 ap plies fo r TO -18 ty p es . M ax. ratings


    OCR Scan     		PDF 2N2218 7785A 2N2218A 31275X 2N2219 27786X 2N2219A 31276H 2N2221 31272E 2n2222 itt 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84

    HEP transistors

    Abstract: 2n6576 2N6578
    Text: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:


    OCR Scan     		PDF 2N6576, 2N6577, 2N6578 15-Ampere 2751ft 2N6578 HEP transistors 2n6576

    BD2428

    Abstract: HEP transistors
    Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations Limited, UK JU N E 1973 - REVISED M ARCH 1997 D esigned for Complementary U m with the BD241 Series T 0-220 PA C KA G E TOP VIEW 40 W at 25°C C ase Temperature


    OCR Scan     		PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A 8D242B BD2428 HEP transistors

    HEP transistors

    Abstract: transistor s 544a B0544 544c
    Text: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, U K JU NE 1973 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with the BD543 Series • 70 W at 25“C Case Temperature • 8 A Continuous Collector Current


    OCR Scan     		PDF BD544, BD544A, BD544B, BD544C BD543 O-220 BD544 BD544B BD544A HEP transistors transistor s 544a B0544 544c

    TIPP31

    Abstract: TIPP31A TIPP31B TIPP31C TIPP32 TIPP32A TIPP32B TIPP32C
    Text: TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS _ M A Y 1989 • R EVISED M A Y 1995 20 W Pulsed Pow er Dissipation • 100 V C apability 1 LP PACKAGE TOP VIEW • 2 A C ontinuous Collector Current • 4 A Peak C ollector Current


    OCR Scan     		PDF TIPP31, TIPP31A, TIPP31B, TIPP31C TIPP31 TIPP31A TIPP31B TIPP32 TIPP32A TIPP32B TIPP32C

    2N3599

    Abstract: 2N3597 2N3598 Pirgo Electronics 2N3599/2N3598/2N3597
    Text: 0 0 4 3 5 9 2 _ A _ P ^ E L E C T R O N I C S I N C ,r<f 3 ’ ” ] £ | D 0 4 3 5 c] g POWER TRANSISTORS ENGINEERING BULLETIN D 000D 4S ñ D &: 2N3599/2N3598/2N3597 '“*^.Vv3 b TYPE 2N 3599,2N 3598,2N 3597, 2 0 AMP NPN SILICON PLANAR POWER TRANSISTORS


    OCR Scan     		PDF DD43Sc DDD0D42 2N3599/2N3598/2N3597 2N3599 2N3598 2M3597, 2N3597 Pirgo Electronics 2N3599/2N3598/2N3597

    s43a

    Abstract: 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier
    Text: 3Ö750Ö1 DQ17HS3 0 | } .u a rn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 A(2N6531)


    OCR Scan     		PDF 2N6530, 2N6531, 2N6532, 2N6533 2N6532) 2N6533) 2N6531) 92CS-39969 O-220AB s43a 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier

    9931 morocco

    Abstract: L6504 si24
    Text: Æ T S C S 'T H O M S O N EiilOg^OllLKgTr^QHgi L6504 SOLENOID CONTROLLER PRELIM IN ARY DATA . SWITCH MODE CURRENT REGULATION •TTL COMPATIBLE LOGIC INPUTS . DRIVES ONE OR TWO EXTERNAL POWER TRANSISTORS ■VERY PRECISE ON-CHIP REFERENCE . ANALOG CURRENT CONTROL INPUT


    OCR Scan     		PDF L6504 L6504 9931 morocco si24

    HEP transistors

    Abstract: No abstract text available
    Text: 3257 O ULTRA FAST AND HYPER FAST RECOVERY RECTIFIERS B -0 4 * 2 Pin C ase 3 C ontact S S D I for higher voltage units. AXIAL LEADED RECTIFIERS @ 3269 o IH W K 1-3 1 > o —3 N) W [m !«C lO m to !h •IZ r> u i' - 'J It? 0= ULl cr ir □ !§ in Is I'ru


    OCR Scan     		PDF f/163 O-111 HEP transistors

    n6532

    Abstract: No abstract text available
    Text: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )


    OCR Scan     		PDF DQ17HS3 2N6530, 2N6531, 2N6532, 2N6533 -220AB RCA-2N6530, P60I9 n6532

    CQ417

    Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
    Text: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A


    OCR Scan     		PDF 180mA 200mA 260mA 275mA 280mA 390mA 350mA 500mA 2N4212 2N2009 CQ417 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686

    2n2222 itt

    Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
    Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C


    OCR Scan     		PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50

    HEP transistors

    Abstract: 250/motorola hep hep 570
    Text: 3260 n o r~ H Ö ULTRA FAST AND HYPER FAST EPION II AND SCHOTTKY RECTIFIERS H -3 >• 03 I m *u ö o m <c M n m t /i M iz o -j i *=< □3 LU û~ er □ t-1 b-1 O □ □ lb -1 ULTRA FAST EPION II RECTIFIERS CONTINUED ADC CASE piv 50A 30A 70A 100 A 75A DO-5


    OCR Scan     		PDF 10R5S 12R5S 15R5S 5R5/61 7R5/61 10R5/61 12R5/61 15R5/61 10R5/3D 12R5/3D HEP transistors 250/motorola hep hep 570

    hep 230 pnp

    Abstract: Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D
    Text: TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 5 , M A R C H 1973 D ESIG NED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCH IN G A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined with Very Low Saturation Voltage


    OCR Scan     		PDF 2N2904 2N2907, 2N2904A 2N2907A 2N2221 hep 230 pnp Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D

    2n3706

    Abstract: 2n3705 8T3704 2N3704 8T3702 A8T3705 A8T3704
    Text: T Y P ES 2N3704 TH RU 2N3706, A8T3704 TH R U A8T3706 N-P-N S ILIC O N T R A N S IS T O R S B U L L E T IN N O . O L -S 7 3 1 1 7 7 1 , J A N U A R Y 1973 S IL E C T t T R A N S IS T O R S i • For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers


    OCR Scan     		PDF 2N3704 2N3706, A8T3704 A8T3706 2IM5451 8T3702, 8T3703 2N3705, A8T3705 2n3706 2n3705 8T3704 8T3702 A8T3705

    circuit diagram for switched reluctance motor for

    Abstract: switched reluctance motor application note gate driver for h bridge mosfet mosfet reluctance motor driver ic driver mosfet 8 pin PWR-INT201PFI PWR-INT201TFI Logic Level Gate Drive mosfet full bridge control mosfet and driver circuit logic gate diagram of ic
    Text: PWR-INT201 High-side Driver IC Floating Inputs Floating High-side Drive POWER INTEGRATIONS, INC. Product Highlights Floating Control Inputs • • Connects directly to P W R -IN T200 or PW R -IN T202 HSD outputs No external level translators or transform ers required


    OCR Scan     		PDF PWR-INT201 PWR-INT200 PWR-INT202 PWR-INT201 PI-538-091191 PI-536A-111391 PI-537-D91191 circuit diagram for switched reluctance motor for switched reluctance motor application note gate driver for h bridge mosfet mosfet reluctance motor driver ic driver mosfet 8 pin PWR-INT201PFI PWR-INT201TFI Logic Level Gate Drive mosfet full bridge control mosfet and driver circuit logic gate diagram of ic

    T1P147

    Abstract: TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 T1P146 3055 5c pnp TIP141
    Text: TYPES TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 1 4 0 , T IP 1 4 1 , TIP142 125 W at 25° C Case Temperature Min h p E 10-A Rated Collector Current 100 m j Reverse Energy Rating


    OCR Scan     		PDF TIP145, TIP146, TIP147 TIP140, TIP141, TIP142 TIP145 T1P146 T1P147 T1P147 TEXAS INSTRUMENTS TIP145 B0738 transistor tip 35c TIP5530 TIP 122 transistor TIP142 3055 5c pnp TIP141