Untitled
Abstract: No abstract text available
Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as
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SXB-2089Z
2500MHz
2500MHz
OT-89
SXB-2089Z
PSF-S01-1mm
EEF-101407
ECB-102925-B
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Untitled
Abstract: No abstract text available
Text: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor
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SZA-3044
EDS-103989
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Untitled
Abstract: No abstract text available
Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5089
OT-89
areA-5089
SBA5089â
SBA5089Zâ
SBA-5089Z
SBA-5089
EDS-102743
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Untitled
Abstract: No abstract text available
Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
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SZM-2066Z
SZM-2066Z
11b/g
a336-678-5570
EDS-104641
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dk39
Abstract: circuit amplifier wireless 2.4ghz 802.11g
Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier
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SZM-2166Z
SZM-2166Z
SZM-2166Z-EVB1
SZM-2166Z-EVB2
SZM-2166Z-EVB3
EDS-105840
dk39
circuit amplifier wireless 2.4ghz 802.11g
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Untitled
Abstract: No abstract text available
Text: Not for New Design TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode in Side View Package Description TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package with
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TSSF4500
TSSF4500
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier
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SZM-3166Z
SZM-3166Z
SZM-3166Zâ
SZM-3166Z-EVB1
EDS-105462
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EPA240D
Abstract: No abstract text available
Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA240D
33dBm
EPA240D
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EPA025A-70
Abstract: 0466 1.5 micron
Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz
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EPA025A-70
70mil
18GHz
12GHz
Rn/50
EPA025A-70
0466 1.5 micron
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NE1280100
Abstract: NE1280200 NE1280400 ca 9088 PT 14-106
Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE
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NE1280100
NE1280200
NE1280400
NE1280
NE1280100
NE1280200
NE1280406
24-Hour
NE1280400
ca 9088
PT 14-106
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Xa2 TRANSISTOR
Abstract: SXH-189 AN023
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
EDS-101247
Xa2 TRANSISTOR
AN023
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Buffer Amplifier Ghz
Abstract: THM2004J
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Buffer Amplifier Ghz
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EPA240D-SOT89
Abstract: EPA240D EPA240
Text: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features '5$,1 6285& (Top View All Dimensions In Mils Applications • • • $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE
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EPA240D-SOT89
33dBm
40dBm
EPA240D-SOT89
EPA240D
EPA240
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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EPA040A
Abstract: No abstract text available
Text: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA040A
18GHz
12GHz
EPA040A
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AN-075
Abstract: A64 marking amplifier MMIC A64 marking SGA-6486z SGA-6486 marking 64z MMIC "A64" marking
Text: SGA-6486 Product Description The SGA-6486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes
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SGA-6486
SGA-6486
AN-075
SGA-6486Z
EDS-100615
AN-075
A64 marking amplifier
MMIC A64 marking
SGA-6486z
marking 64z
MMIC "A64" marking
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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nec 151
Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.
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NE32900
NE32900
nec 151
transistor NEC ka 42
NEC D 553 C
nec, hetero junction transistor
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NE546
Abstract: NE546N NE546-N
Text: NE546-N DESCRIPTION FEATURES The NE546 is a m o n o lith ic inte grated c irc u it th a t provides an RF am p lifie r, IF a m plifier, m ixer, o s c illa to r, AG C de tector, and voltage re g u la to r in a sin g le 1C. The p rim a ry a p p li catio n is s up er hetero dyne A M ra dio receiv
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NE546-N
NE546
NO400Hz.
190pF
120mm
NE546N
NE546-N
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9315b
Abstract: SLD201V SLD201V3
Text: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.
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SLD201
SLD201U-3/V-3
SLD201U-3
SLD201V-3
9315b
SLD201V
SLD201V3
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U4311B-C
Abstract: rc car receiver remote control rc car circuit diagram
Text: T e m ic U4311B Se m i co n ü u c tors Low-Current Superhet Remote Control Receiver Description The U 431IB is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car
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U4311B
431IB
D-74025
19-Nov-98
U4311B-C
rc car receiver
remote control rc car circuit diagram
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Untitled
Abstract: No abstract text available
Text: Temic TSHF5400 S e m i c o n d u c t o r s High Speed IR Emitting Diode in 0 5 mm T-l3/i Package Description T SH F 5400 is a high speed infrared em itting diode in G aA lA s on G aA lA s double hetero (DH) technology, m olded in a clear, untinted plastic package.
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TSHF5400
15-Oct-96
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Untitled
Abstract: No abstract text available
Text: SLD202U/V SONY. 25mW High Power Laser Diode Description Package Outline SLD202U/V is a gain-guided high-power laser diode fabricated by MOCVO. Unit: mm SLD202U Features • Low noise S/N =80 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.
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SLD202U/V
SLD202U/V
SLD202U
SLD202V
720kHz
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capacitor 47 vishay
Abstract: No abstract text available
Text: TEMIC U4314B S e m i c o n ü u c tors Logarithmic AM Demodulator / RSSI Description The U4314B is a monolithic Integrated Circuit in bipolar technology for low current super-heterodyne receivers. It can be used as a logarithmic Received Signal Strength Indicator RSSI or as a logarithmic AM demodulator. Its
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U4314B
U4314B
D-74025
19-Nov-98
capacitor 47 vishay
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