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    HF POWER AMPLIFIERS 2-30 MHZ Search Results

    HF POWER AMPLIFIERS 2-30 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    HF POWER AMPLIFIERS 2-30 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4c6 toroids

    Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
    Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96


    Original     		PDF BLW96 BLW50F AN98030 BLW96 4c6 toroids Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 ECO6907 BLW50F blw96 equivalent

    1gw 82

    Abstract: PBTC-1GW BL301 K558 Y460 ZNBT-60-1W
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-f U ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 1gw 82 PBTC-1GW BL301 K558 Y460 ZNBT-60-1W

    1gw 75

    Abstract: JEBT-6G
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 BL301 1gw 75 JEBT-6G

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 BL301

    RFDC

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G Note B C O N N E C T I O N — — — — — — BL301 BL301 hr hr 39.95 59.95 1.05 1.2 1.1 1.3 1.1 1.2 1.2 2.2 GU1041 GU1041


    Original     		PDF BL301 BL301 TB-268 RFDC

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES 50Ω Surface Mount o HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU CAPD DATA ISOLATION*, dB INSERTION LOSS*, dB FREQ. RANGE MHz Note B C O N N E C T I O N BL301 BL301 hr hr 39.95 59.95 BL301 BL301 hr hr 59.95 69.95 CASE STYLE RF-DC, RF&DC-DC


    Original     		PDF BL301 BL301

    K18 diodes

    Abstract: TB268
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268 K18 diodes TB268

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount o 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW 10-4200 0.1-4200 NEW TCBT-2R5G NEW TCBT-6G 20-2500 50-6000 Note B C O N N E C T I O N 1.2 1.2 0.6 0.6 1.6 1.6 32 25 20 15 40 40 20 20 40 40 20 20 — — —


    Original     		PDF BL301 BL301 TB-268

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES HIGH CURRENT 50Ω Surface Mount o 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU ISOLATION*, dB CAPD DATA CASE STYLE RF-DC, RF&DC-DC (see RF/IF Designer handbook) Page Note B C O N N E C T I O N INSERTION LOSS*, dB FREQ. RANGE MHz L M U L M U Typ. Max.


    Original     		PDF BL301 BL301

    GU1041

    Abstract: 1gW 38
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268 GU1041 1gW 38

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268

    philips ferroxcube 4c6

    Abstract: philips toroid 4c6 ferroxcube 4C6 toroid core 4C6 toroid AN98032 Philips Application Note ECO6907 electrosil HF power amplifier blf177 4C6 ferrite power combiner toroid
    Text: APPLICATION NOTE Combining units for a 1 kW wideband HF amplifier AN98032 Philips Semiconductors Combining units for a 1 kW wideband HF amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 CIRCUIT DESCRIPTION 3.1 3.2 The input power divider The output power combiner


    Original     		PDF AN98032 SCA57 philips ferroxcube 4c6 philips toroid 4c6 ferroxcube 4C6 toroid core 4C6 toroid AN98032 Philips Application Note ECO6907 electrosil HF power amplifier blf177 4C6 ferrite power combiner toroid

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    indiana general

    Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
    Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


    Original     		PDF S175-50 5-240pF 75-480pF 2700pF F627-9, F625-9, F624-19, F627-8, indiana general F624-19 F627 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9

    1gw 75

    Abstract: HF 4093 N
    Text: Bias-Tee □ Mini-Circuits ZFBT ZFBT-FT 0.1 to 6000 MHz case style selection outline drawings see Table of Contents PBTC FREQ. MHz L MODEL NO. ZFBT-4R2G ZFBT-4R2G-FT ZFBT-6G ZFBT-6G-FT •fr ZFBT-4R2GW <• ZFBT-4R2GW-FT ■fr ZFBT-6GW 4- ZFBT-6GW-FT PBTC-1G


    OCR Scan     		PDF 100mA 150mA 200mA 1gw 75 HF 4093 N

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411

    40375

    Abstract: 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 40375 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180

    complement of 2N3053

    Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 complement of 2N3053 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102

    LC 7995

    Abstract: No abstract text available
    Text: Bias-Tees 50 Q Surface MountJ High Current 100 kHz to6000 MHz JEBT INSERTION LOSS*, dB FREQ. RANGE MHz MODEL NO. H CASE STYLE ISOLATION*, C» RF-DC, RF&DC-DC L M u L M u Typ. Max. Typ. Max. Typ. M ax. iy p . Min. Typ. Min. Typ . Min. Note B JEBT-4R2G JEBT-6G


    OCR Scan     		PDF to6000 BL301 LC 7995

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    MOTOROLA SELECTION mrf150

    Abstract: mrf154 amplifier motorola MRF150 mrf138 mrf140 MRF148 MRF150 Selection guide of Transistors MRF153 mrf154
    Text: l. jT, : p i r CuK \rjQyìms\ ! LI 1 / 3 1 211- 0 i MOS (TMOS) FETs 211-09 RF Power FETs provide high gain, improved high-order inter­ modulation distortion, high input impedance, and built-in gain control for ALC and manual power output control. The FETs


    OCR Scan     		PDF 211-0I MRF153 MRF154 MRF138 MRF140 MRF148 MRF150 MOTOROLA SELECTION mrf150 mrf154 amplifier motorola MRF150 Selection guide of Transistors

    MC1350P

    Abstract: MC1330 IC Motorola mc1330 nf 931 MC1330 455 khz if transformer coil 455 khz if transformer MC1350 hf power amplifiers 2-30 mhz nf 922
    Text: M O T O R O LA 11 MCI 350 Monolithic IF Amplifier The MC1350 is an integrated circuit featuring wide range AGC for use as an IF amplifier in radio and TV over an operating temperature range of 0° to +75°C. IF AMPLIFIER • Power Gain: 50 dB Typ at 45 MHZ


    OCR Scan     		PDF MC1350 140at455kHl MC1350P MC1330 IC Motorola mc1330 nf 931 MC1330 455 khz if transformer coil 455 khz if transformer hf power amplifiers 2-30 mhz nf 922

    Untitled

    Abstract: No abstract text available
    Text: 12E D I b3fc>7554 0000115 Ö | MOTORO LA SC MOTOROLA XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA M R T 0 1 05-75 The RF Line UHF Power Transistor . designed primarily for wideband, large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.


    OCR Scan     		PDF

    MRF485

    Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan     		PDF MRF476 T0-220AB MRF453 MRF455/A MRF454 MRF475 MRF449 MRF450/A MRF497 O-220AB MRF485 mrf477 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460