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    HFE TRANSISTOR Search Results

    HFE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HFE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTC3875S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		PDF KTA1504S. KTC3875S 100mA, KTC3875S

    KTA2014F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.


    Original     		PDF KTC4075F KTA2014F. 270Hz KTA2014F

    KTA2013F

    Abstract: tfsm package TFSM
    Text: SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.


    Original     		PDF KTA2013F KTC4074F. -100mA, -10mA KTA2013F tfsm package TFSM

    TFSM

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.


    Original     		PDF KTC4074F KTA2013F. 100mA, TFSM

    KTC4074F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.


    Original     		PDF KTC4074F KTA2013F. KTC4074F

    HN3C51F

    Abstract: MARKING L toshiba TRANSISTOR 015G hn3c51 015G
    Text: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN3C51F HN3C51F MARKING L toshiba TRANSISTOR 015G hn3c51 015G

    2SC4738FV

    Abstract: MARKING LY toshiba 2SA1832FV
    Text: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV


    Original     		PDF 2SC4738FV 2SA1832FV 2SC4738FV MARKING LY toshiba 2SA1832FV

    HN4A51J

    Abstract: No abstract text available
    Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A51J -120V HN4A51J

    hn3a51f

    Abstract: No abstract text available
    Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN3A51F -120V hn3a51f

    HN4C51J

    Abstract: No abstract text available
    Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN4C51J HN4C51J

    HN4A06J

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J -120V HN4A06J

    Untitled

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN4C06J

    Untitled

    Abstract: No abstract text available
    Text: Transistors hFE rankings codes hFE rankings codes FThe hFE values of ROHM transistors are classified as shown below, and the hFE code is marked on each product. The hFE of the TO-220FP and TO-220FN are classified as shown below, and the hFE code is marked on each product.


    Original     		PDF O-220FP O-220FN

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		PDF KTA1517S -120V. KTC3911S. -120V, -10mA,

    HN4A06J

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J -120V HN4A06J

    HN4C06J

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN4C06J HN4C06J

    Untitled

    Abstract: No abstract text available
    Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN4A06J -120V

    Untitled

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN4C06J

    Untitled

    Abstract: No abstract text available
    Text: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN3C51F

    HN3C51F

    Abstract: No abstract text available
    Text: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN3C51F HN3C51F

    HN1B26FS

    Abstract: No abstract text available
    Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 • High hFE : hFE = 120~400 0.35 0.35 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original     		PDF HN1B26FS HN1B26FS

    HN3A51F

    Abstract: No abstract text available
    Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		PDF HN3A51F -120V HN3A51F

    Untitled

    Abstract: No abstract text available
    Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN4C51J

    Untitled

    Abstract: No abstract text available
    Text: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		PDF HN4C06J