HFD2N60
Abstract: No abstract text available
Text: BVDSS = 600 V RDS on typ = 4.0 Ω HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60 1.Gate 2. Drain 3. Source
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HFD2N60
HFU2N60
HFD2N60
O-252
O-251
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RG 702 Diode
Abstract: hfu2n60s HFD2N60S HFU2N60 702 D-PAK
Text: BVDSS = 600 V RDS on typ = 4.2 Ω HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source
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HFD2N60S
HFU2N60S
HFD2N60S
O-252
O-251
RG 702 Diode
hfu2n60s
HFU2N60
702 D-PAK
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HFU2N60
Abstract: 10V 2A MOSFET N-channel c25 mosfet 600V 2A MOSFET N-channel MOSFET C25 mosfet 300V 10A
Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 █ APPLICATIONSL TO-251 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ 1―G T j ——Operating Junction Temperature …………………………150℃
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HFU2N60
O-251
Width300sDuty
600VVGS
HFU2N60
10V 2A MOSFET N-channel
c25 mosfet
600V 2A MOSFET N-channel
MOSFET C25
mosfet 300V 10A
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