2N3019
Abstract: No abstract text available
Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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2N3019
2N3019
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2N3019
Abstract: No abstract text available
Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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2N3019
2N3019
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2N3019
Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation
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2N3019
2N3020
2N3019
2N3020
2N301
2N3019-2N3020
2N302
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2SA1723
Abstract: BX-0975
Text: Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features · High fT fT=1.5GHz typ .
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EN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
2SA1723
BX-0975
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5541A
2SC5375
2059B
2SC5375]
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2SC5375
Abstract: ITR06394 ITR06395 ITR06396 ITR06397
Text: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5541A
2SC5375
S21e2
2059B
2SC5375]
2SC5375
ITR06394
ITR06395
ITR06396
ITR06397
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TRANSISTOR KT 837
Abstract: a1046 transistor A1046 A1684
Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5535A
2SC5374
2SC5374]
TRANSISTOR KT 837
a1046
transistor A1046
A1684
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ITR08169
Abstract: 2SC5374 ITR08168 ITR08170 ITR08171 ITR08172
Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5535A
2SC5374
S21e2
2SC5374]
ITR08169
2SC5374
ITR08168
ITR08170
ITR08171
ITR08172
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2SC5375
Abstract: TA-0824 Transistor 4733 transistor kt 801 IC 7484
Text: Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm
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EN5541A
2SC5375
2059B
2SC5375]
2SC5375
TA-0824
Transistor 4733
transistor kt 801
IC 7484
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7
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ENN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
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2SC5374
Abstract: KT 819 transistor Specification zo 607
Text: Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10.5dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm
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EN5535A
2SC5374
2SC5374]
2SC5374
KT 819 transistor
Specification zo 607
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High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and
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2SA1723
Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7
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ENN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
2SA1723
ITR04378
ITR04379
ITR04380
ITR04381
ITR04382
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npn folded cascode
Abstract: differential pair cascode LM324 DG folded cascode folded cascode op amp EL2044 EL2150 EL2210 LM324 LM324 DP
Text: Application Note Using Single-Supply High-Frequency Amplifiers Using Single-Supply High-Frequency Amplifiers by Barry Harvey and Mike Wong 20 The trend toward lower power supply voltages has recently inspired the design of integrated single-supply high-frequency amplifiers The greatest use of these circuits is in passing video signals although there are many other applications
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LM324
npn folded cascode
differential pair cascode
LM324 DG
folded cascode
folded cascode op amp
EL2044
EL2150
EL2210
LM324 DP
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100nf(104)mylar capacitor
Abstract: 100nF(104)mylar capacitors 100nF(104) mylar capacitors VFC110AP 104 mylar capacitor datasheet vfc110ap datasheet VFC110 VFC110AG VFC110AG2 VFC110APG4
Text: VFC110 SBVS021A − OCTOBER 1988 − REVISED APRIL 2007 High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES DESCRIPTION D HIGH-FREQUENCY OPERATION: D The VFC110 voltage-to-frequency converter is a third-generation VFC offering improved features and performance. These include higher frequency operation,
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VFC110
SBVS021A
VFC110
100nf(104)mylar capacitor
100nF(104)mylar capacitors
100nF(104) mylar capacitors
VFC110AP
104 mylar capacitor datasheet
vfc110ap datasheet
VFC110AG
VFC110AG2
VFC110APG4
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100nf(104)mylar capacitor
Abstract: 100nF(104)mylar capacitors 104 mylar capacitor datasheet 10nf mylar capacitor vfc110ap datasheet VFC110 VFC110AG VFC110AG2 VFC110AP VFC110APG4
Text: VFC110 SBVS021A − OCTOBER 1988 − REVISED APRIL 2007 High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES DESCRIPTION D HIGH-FREQUENCY OPERATION: D The VFC110 voltage-to-frequency converter is a third-generation VFC offering improved features and performance. These include higher frequency operation,
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VFC110
SBVS021A
VFC110
100nf(104)mylar capacitor
100nF(104)mylar capacitors
104 mylar capacitor datasheet
10nf mylar capacitor
vfc110ap datasheet
VFC110AG
VFC110AG2
VFC110AP
VFC110APG4
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NE-SE5539
Abstract: AN140
Text: Philips Semiconductors Section 3 High Frequency/Video Amplifiers General Purpose/Linear ICs INDEX NE/SA5204A Wide-band high-frequency amplifier . 181 NE/SA/SE5205AWide-band high-frequency amplifier . 192
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NE/SA5204A
NE/SA/SE5205AWide-band
NE/SA5209
NE/SA5219
NE/SE5539
AN140
NE5592
NE592
AN141
HA733/733C
NE-SE5539
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2N5583
Abstract: MRF558
Text: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and
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MIL-S-19500
MRFS583HX,
MRF5583HXV
2N5583
b3b72S4
MRF558
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3020
Abstract: 3019 2N3019 3020 transistor 2n3020
Text: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.
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2N3019
2N3019
3020
3019
3020 transistor
2n3020
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation
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2N3019
2N3019
P008B
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MRF911
Abstract: F914 2N6604
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6604 The RF Line N F « 2.7 dB 1.0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR .d e s ig n e d for use in high-frequency, low-noise, small-signal, narrow and wideband amplifiers. Ideal fo r use in m icrostrip th in
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2N6604
IS22I
MRF911
F914
2N6604
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LP1983
Abstract: motorola 039
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ
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LP1983
MRF901
Temperat13
IS22I
LP1983
motorola 039
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MRF581
Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz
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MRF581
MRF581A
VK-200,
56-590-65/3B
MRF581A
IS211
MRF581M
f5b FERRITE
f5b FERRITE bead
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2sc377
Abstract: No abstract text available
Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.
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250mm
2SC3771
2SC3772
2SC3773
2SC377
2SC3775
2SC4269
2SC4270
2SC4364
2SC4365
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