2N3019
Abstract: No abstract text available
Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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2N3019
2N3019
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2N3019
Abstract: No abstract text available
Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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2N3019
2N3019
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2N3019
Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation
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2N3019
2N3020
2N3019
2N3020
2N301
2N3019-2N3020
2N302
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2SA1723
Abstract: BX-0975
Text: Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features · High fT fT=1.5GHz typ .
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EN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
2SA1723
BX-0975
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2SA1815
Abstract: 2SC4432 ITR04747 ITR04748
Text: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.
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ENN4625
2SA1815
100MHz)
750MHz
2SC4432.
2018B
2SA1815]
2SA1815
2SC4432
ITR04747
ITR04748
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2SC3837K
Abstract: 2SC4082 2SC4725 2SC5661 SC-75A T106 T146 transistor frequency 1.5GHz gain 20 dB marking NP
Text: 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 20V, 50mA, 1.5GHz 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K zDimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 6ps)
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2SC5661
2SC4725
2SC4082
2SC3837K
2SC5661
2SC3837K
SC-75A
T106
T146
transistor frequency 1.5GHz gain 20 dB
marking NP
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2SC5662
Abstract: 2SC3838K 2SC4083 2SC4726 SC-75A T106 T146
Text: 2SC5662 / 2SC4726 / 2SC4083 /2SC3838K Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K zExternal dimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT= 3.2GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 4ps)
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2SC5662
2SC4726
2SC4083
/2SC3838K
2SC3838K
2SC5662
2SC3838K
SC-75A
T106
T146
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MSG56BBB0L
Abstract: No abstract text available
Text: ACHIEVED HIGH-PERFORMANCE HIGH FREQUENCY CHARACTERSITIC WITH THE NEWEST FINE PROCESSIG TECHNOLOGY OF SiGeC HIGH-FREQUENCY TRANSISTOR MSG56BBA0LBF/BBB0LBF Unit : mm Overview The MSG56BBA0LBF and MSG56BBB0LBF are Silicon Germanium Carbon SiGeC transistors most suitable for low-noise
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MSG56BBA0LBF/BBB0LBF
MSG56BBA0LBF
MSG56BBB0LBF
MSG56BBB0L.
MSG56BBA0LBF.
MSG56BBB0L
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Untitled
Abstract: No abstract text available
Text: 8 Microwave Components Isolators Chip Multilayer Hybrid Couplers Field-Effect Transistors MESFET Chip Multilayer Antennas Chip Dielectric Antennas Dielectric Resonators (RESOMICS ) High-Frequency Monolithic Ceramic Capacitors High-Frequency Microchip Capacitors
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2SC3354
Abstract: No abstract text available
Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT 15.6±0.5
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2SC3354
2SC3354
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2SC3354
Abstract: No abstract text available
Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT
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2SC3354
2SC3354
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SMD M1A
Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Text: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun
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OT-23
OT-23
BF536
BF550
BF569
BF579
BF660
BF747
BF767
BF824
SMD M1A
marking g3p
marking L2 SOT23 6
m1a smd
smd marking code m1a
L2 SOT23
smd transistors
smd code marking sot23
smd transistors code
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2N3866
Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains
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2N3866
2N4427
2N2708
2N918
BFY90
OT-23
ZTX325
zetex ztx327
Zetex bfy90
Transistor 2N3866
2N2102
BSY55
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2N4036
Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details
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2N918
2N2708
BUY92
BUY91
BUY90
2N4036
2N4037
TP-39
TRANSISTOR BC140
transistor 2N2219
ZT Ferranti
2N2102
2N2405
2N3866
2N4427
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marking AD
Abstract: 2sc4043 2SC4083 2SC3838K 2SC4043S 2SC4726 2SC4726H SC-75A SC-89 T106
Text: 2SC4726H / 2SC4726 / 2SC4083 / _ 2SC3838K / 2SC4043S Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC4726H12SC472612SC408312SC3838K 2SC4043S •External dimensions (Units : mm) •Features 1) High transition frequency. (Typ. fr= 1.5GHz)
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2SC4726H
2SC4726
2SC4083
2SC3838K
2SC4043S
marking AD
2sc4043
2SC4043S
SC-75A
SC-89
T106
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Transistor 2N3866
Abstract: P039 zt91 2N2102 2N2708 2N3866 2N4427 2N918 BFY90 BSY55
Text: HIGH FREQUENCY TABLE 7 - NPN SILICO N PLANAR HIGH FREQUENCY T R A N SIST O R S The transistors show n in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains
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2N3866
2N4427
2N2708
2N918
BFY90
BSY55
2N2102
2N4036
Transistor 2N3866
P039
zt91
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"Marking AC"
Abstract: marking ac 05 marking code transistor ROHM 2SC3837K 2SC4082 2SC4725 2SC4725H SC-75A SC-89 T106
Text: 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 18V, 50mA, 1.5GHz 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K •External dimensions (Units: mm) •Features 1) High transition frequency. (Typ. fr = 1.5GHz) 2) Small rbb’ Ccand high gain. (Typ. 6ps)
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2SC4725H
2SC4725
2SC4082
2SC3837K
SC4725
"Marking AC"
marking ac
05 marking code transistor ROHM
2SC3837K
SC-75A
SC-89
T106
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3020
Abstract: 3019 2N3019 3020 transistor 2n3020
Text: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.
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2N3019
2N3019
3020
3019
3020 transistor
2n3020
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation
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2N3019
2N3019
P008B
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2SA1870
Abstract: SST8245 2sa1807 SSTA13
Text: Transistors/Surface Mounting Type Quick Reference MOS FET Transistors • EMT3 Package • Negative symbol for PNP type is omitted. § : High-Frequency type • UMT3 Package # : High hpe type § : High-Frequency type 66 itomn * >> \ , <“ • H I# , ‘ ,
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2SA1514K
2SC3906K
2SC4713K5
2SC3838K5
2SC3837K1
2SC2413K5
2SC4061K
2SA1037AK
2SC2412K
2SD2226K*
2SA1870
SST8245
2sa1807
SSTA13
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2SB511
Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
Text: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2SC2078
O-220
27MHz
tag75
2SD895
2SB776
2SD896
2SB816
2SD1046
2SB817
2SB511
2SC4030
2SA1011
2SC2344
2SC4031
2SC4493
2SC4572
2SC4578
2SC4579
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2SD1046
Abstract: 2SB514
Text: SAfiYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2SC2078
O-220
27MHz
T0-220
MT930303TR
2SD1046
2SB514
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MPQ918
Abstract: MO chip Transistor 2n918 die transistor k84 2N918 2N918 thermal resistance PDB00 chip die hp transistor
Text: MPQ918 SILICON QUAD DUAL IN-LINE NPN SILICON ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed for low-level, high-ijain am plifier applications. • Lo w Noise Figure — @ I q - 1.0 mAdc
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MPQ918
2N918
MPQ918
MO chip Transistor
2n918 die
transistor k84
2N918
2N918 thermal resistance
PDB00
chip die hp transistor
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MRF581
Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz
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MRF581
MRF581A
VK-200,
56-590-65/3B
MRF581A
IS211
MRF581M
f5b FERRITE
f5b FERRITE bead
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