rd15hvf
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:
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RD15HVF1
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RD15HVF1
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rd15hvf
Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:
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RD15HVF1
175MHz520MHz
RD15HVF1
175MHz
520MHz
Oct2011
rd15hvf
RF Transistor s-parameter 30W
transistor d 1302
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diode marking SJ
Abstract: JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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diode marking SJ
JESD22
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65C6070
Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
726-IPW65R070C6
65C6070
infineon MOSFET parameter test
diode marking SJ
65C6
ipw65r
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6r041c6
Abstract: IPW60R041C6 ipw60r041 6r041c6 mosfet data 6R041 JESD22 if444 TO-247-3
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.1, 2010-07-12 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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6r041c6
IPW60R041C6
ipw60r041
6r041c6 mosfet data
6R041
JESD22
if444
TO-247-3
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6r3k3c6
Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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6r3k3c6
transistor SMD MARKING CODE 772
IPD60R3K3C6
TRANSISTOR SMD MARKING CODE 42
JESD22
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6R070C6
Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 infineon MOSFET parameter test c6 transistor JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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6R070C6 MOSFET TRANSISTOR
IPW60R070C6
infineon MOSFET parameter test
c6 transistor
JESD22
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65F6080
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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6r1k4c6
Abstract: IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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6r1k4c6
IPD60R1K4C6
smd diode EG - 413
Diode SMD SJ 94
Diode SMD SJ 98
JESD22
MOSFET TRANSISTOR SMD MARKING CODE 11
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65F6080
Abstract: ipw65r080
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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65F6080
Abstract: ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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65F6080
ipw65r080
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65F608
coolmos cfd
ipw65r
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6r2k0c6
Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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g1 TRANSISTOR SMD MARKING CODE
JESD22
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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Transistor C G 774 6-1
Abstract: 100OHM RD45HMF1 Transistor C 1279
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers
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800-900MHz
RD45HMF1-101
Transistor C G 774 6-1
100OHM
Transistor C 1279
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RD70HHF
Abstract: RD70HHF1 mosfet HF amplifier idq10
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
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RD70HHF
mosfet HF amplifier
idq10
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RD15HVF1
Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica
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RD15HVF1
175MHz
520MHz
RD15HVF1-101
100OHM
RF Transistor s-parameter vhf
transistor D 1557
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RD70HVF1-101
Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.
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Oct2011
RD70HVF1-101
RD70HVF
70w power amplifier rd70hvf1
60W VHF circuit RF amplifier
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RD70HVF
Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers
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520MHz
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175MHz
520MHz
RD70HVF
rd70
RD70HVF1-101
100OHM
071J
1695 GP 1
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RD15HVF1
Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica
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175MHz15W
520MHz
RD15HVF1
175MHz
520MHz
rd15hvf
RD15HV
175mhz
gp 845
100OHM
mitsubishi rf RD15HVF1
UHF POWER mosfet 3w
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RD70HVF
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.
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520MHz
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RD60HUF1
Abstract: 100OHM ZO-10 Rf power transistor mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.
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520MHz
100OHM
ZO-10
Rf power transistor mosfet
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100OHM
Abstract: RD45HMF1 TRANSISTOR HANDLING 2A A 107 transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers
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900MHz-band
900MHz
800-900MHz
100OHM
TRANSISTOR HANDLING 2A
A 107 transistor
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RD100HHF1
Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
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30MHz
TRANSISTOR D 1765
304 fet transistor
TRANSISTOR D 1765 720
100w RD100HHF1
hf amplifier 100w
hf power transistor mosfet
mosfet HF amplifier
68 0154
rf amplifier 100w
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RD60HUF1-101
Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.
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520MHz
RD60HUF1-101
RD60HUF1-101
Rf power transistor mosfet
UHF transistor FET
100OHM
PINw10
transistor A 1568
mitsubishi 250
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