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    HIGH SENSITIVITY REFLECTIVE PHOTOTRANSISTOR Search Results

    HIGH SENSITIVITY REFLECTIVE PHOTOTRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    HIGH SENSITIVITY REFLECTIVE PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CNB2001

    Abstract: No abstract text available
    Text: Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor Unit : mm Overview 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor


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    ic measurement type

    Abstract: Reflective photosensor high sensitivity reflective phototransistor CNB2001
    Text: Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor Unit : mm Overview 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor


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    PDF CNB2001 CNB2001 ic measurement type Reflective photosensor high sensitivity reflective phototransistor

    Untitled

    Abstract: No abstract text available
    Text: Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor Unit : mm Outline 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor


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    RPR-359F

    Abstract: 359F PHOTO SENSORS RPR-359F
    Text: RPR-359F Sensors Reflective photosensor photoreflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in


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    PDF RPR-359F RPR-359F 359F PHOTO SENSORS RPR-359F

    3tf4

    Abstract: Reflective photosensor response time high sensitivity reflective phototransistor CNB1302
    Text: Reflective Photosensors Photo Reflectors CNB1302 Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.


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    PDF CNB1302 CNB1302 3tf4 Reflective photosensor response time high sensitivity reflective phototransistor

    Untitled

    Abstract: No abstract text available
    Text: Reflective Photosensors Photo Reflectors ON2180 Reflective Photosensor Unit : mm Outline 9.0±1.0 ON2180 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.


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    Untitled

    Abstract: No abstract text available
    Text: Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor Unit : mm Outline 9.0±1.0 ONN2270 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor is used as the photo


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    PDF ON2270 ONN2270

    CNB2301

    Abstract: ON2270 Reflective photosensor response time
    Text: Reflective Photosensors Photo Reflectors CNB2301 (ON2270) Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo


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    PDF CNB2301 ON2270) CNB2301 ON2270 Reflective photosensor response time

    photo darlington sensor

    Abstract: high sensitivity reflective phototransistor infrared photo reflector Reflective photosensor response time CNB2301 3tf4
    Text: Reflective Photosensors Photo Reflectors CNB2301 Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo


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    PDF CNB2301 CNB2301 photo darlington sensor high sensitivity reflective phototransistor infrared photo reflector Reflective photosensor response time 3tf4

    high sensitivity reflective phototransistor

    Abstract: CNB1303
    Text: Reflective Photosensors Photo Reflectors CNB1303 Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB1303 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.


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    PDF CNB1303 CNB1303 high sensitivity reflective phototransistor

    Untitled

    Abstract: No abstract text available
    Text: Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor Unit : mm Outline 9.0±1.0 ON2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.


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    CNB1302

    Abstract: ON2170
    Text: Reflective Photosensors Photo Reflectors CNB1302 (ON2170) Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.


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    PDF CNB1302 ON2170) CNB1302 ON2170

    rl 205 diode

    Abstract: focal reflective phototransistor Reflective photosensor high sensitivity reflective phototransistor infrared photo reflector phototransistor visible light Reflective photosensor response time CNZ2179
    Text: Reflective Photosensors Photo Reflectors CNZ2179 Reflective Photosensor Unit : mm 5.2 Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor


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    PDF CNZ2179 CNZ2179 85max. rl 205 diode focal reflective phototransistor Reflective photosensor high sensitivity reflective phototransistor infrared photo reflector phototransistor visible light Reflective photosensor response time

    Reflective photosensor response time

    Abstract: high sensitivity reflective phototransistor CNZ2152
    Text: Reflective Photosensors Photo Reflectors CNZ2152 Reflective Photosensor Overview 8.0±0.2 3.2±0.2 CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor


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    PDF CNZ2152 CNZ2152 Reflective photosensor response time high sensitivity reflective phototransistor

    ON2180

    Abstract: CNB1303
    Text: Reflective Photosensors Photo Reflectors CNB1303 (ON2180) Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB1303 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.


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    PDF CNB1303 ON2180) CNB1303 ON2180

    ON2179

    Abstract: focal reflective phototransistor CNZ2179 ON2179 circuit V40IF
    Text: Reflective Photosensors Photo Reflectors CNZ2179 (ON2179) Reflective Photosensor Unit : mm 5.2 Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor


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    PDF CNZ2179 ON2179) CNZ2179 85max. ON2179 focal reflective phototransistor ON2179 circuit V40IF

    high sensitivity reflective phototransistor

    Abstract: ON2152 CNZ2152
    Text: Reflective Photosensors Photo Reflectors CNZ2152 (ON2152) Reflective Photosensor Overview 8.0±0.2 3.2±0.2 CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor


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    PDF CNZ2152 ON2152) CNZ2152 high sensitivity reflective phototransistor ON2152

    focal reflective phototransistor

    Abstract: SG-113 paper sensor
    Text: Photointerrupters Reflective KODENSHI SG-113 DIMENSIONS (Unit : mm) The SG-113 reflective sensor for paper sensing combine high-output GaAs IRED with high sensitivity phototransistor.It is most applicable to paper sensor. FEATURES •Long focal distance type


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    PDF SG-113 SG-113 focal reflective phototransistor paper sensor

    Reflective photosensor response time

    Abstract: CNB1001 high sensitivity reflective phototransistor Reflective photosensor CNB1002
    Text: Reflective Photosensors Photo Reflectors CNB1001, CNB1002 Reflective Photosensors Unit : mm 3.4 1.8 Overview CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si


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    PDF CNB1001, CNB1002 CNB1001 CNB1002 CNB1001 Reflective photosensor response time high sensitivity reflective phototransistor Reflective photosensor

    2Y DIODE SMD

    Abstract: Reflective photosensor 2Y SMD high sensitivity reflective phototransistor Photosensor CNB2001
    Text: Panasonic Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor • Outline CNB2001 is a small, thin SM D-compatible reflective photosensor consisting o f a high efficiency GaAs infrared light em itting diode which is integrated with a high sensitivity Darlington phototransistor


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    PDF CNB2001 CNB2001 2Y DIODE SMD Reflective photosensor 2Y SMD high sensitivity reflective phototransistor Photosensor

    RPR-359F

    Abstract: phototransistor visible light photoreflector
    Text: RPR-359F Sensors _ Reflective photosensor photoreflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in


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    PDF RPR-359F phototransistor visible light photoreflector

    IEC50

    Abstract: Infrared photosensor
    Text: Sensors Reflective photosensor with encased reflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity and a built-in visible light filter


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    PDF RPR-359F RPR-359F IEC50 Infrared photosensor

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Reflective Photosensors Photo Reflectors ON2173 Reflective Photosensor • Outline ON2173 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor


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    PDF ON2173 ON2173

    rpr359f

    Abstract: No abstract text available
    Text: Sensors Reflective photosensor with encased reflector RPR-359F The RPR-359F is a reflective photosensor. The em itter is a GaAs infrared light em itting dio d e and the de tector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity and a built-in visible light filter


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    PDF RPR-359F RPR-359F rpr359f