REFLECTIVE OBJECT SENSOR
Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Text: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
|
Original
|
OPB609
OP609
REFLECTIVE OBJECT SENSOR
ir sensor for object detection using led
ir sensor 0038
OBJECT SENSOR
OPB609AX
OPB609GU
OPB609RA
OP508
LED 020 ir sensor
|
PDF
|
ir sensor for object detection using led
Abstract: vibra tite OPB609AX REFLECTIVE OBJECT SENSOR OPB609 OPB609GU OPB609RA reflective sensor 4 pin
Text: Reflective Object Sensor OPB609 Series Features: • • • • RA OPB609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
|
Original
|
OPB609
ir sensor for object detection using led
vibra tite
OPB609AX
REFLECTIVE OBJECT SENSOR
OPB609GU
OPB609RA
reflective sensor 4 pin
|
PDF
|
ir sensor 0038
Abstract: LED 020 ir sensor OBJECT SENSOR ir sensor for object detection using led REFLECTIVE OBJECT SENSOR reflective sensor 4 pin OPB609GU
Text: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
|
Original
|
OPB609
OP609
ir sensor 0038
LED 020 ir sensor
OBJECT SENSOR
ir sensor for object detection using led
REFLECTIVE OBJECT SENSOR
reflective sensor 4 pin
OPB609GU
|
PDF
|
ir sensor 0038
Abstract: No abstract text available
Text: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are
|
Original
|
OPB609
OP609
ir sensor 0038
|
PDF
|
schematic photo sensor
Abstract: photo 3-pin IR sensor 3-pin IR sensor PC105 high speed ir sensor diode uv sensor UV diode 250 nm Pacific Silicon Sensor
Text: First Sensor PIN Photo Diode Data Sheet Part Description PC10-5b TO Order # 501426 Version 21-12-11 Features Description Application RoHS • Ø 3.6 mm active area • Low dark current • Fast response time • High speed epitaxy • Fully depleted at 3.5 V
|
Original
|
PC10-5b
2002/95/EC
0E-09
0E-10
0E-11
0E-12
schematic photo sensor
photo 3-pin IR sensor
3-pin IR sensor
PC105
high speed ir sensor diode
uv sensor
UV diode 250 nm
Pacific Silicon Sensor
|
PDF
|
PAN3601DH
Abstract: trf7903 paw3601 pan3601 paw3601dh-nf mouse chip PAW3601dh PAW optical mouse TRF7903-PW20 CY7C63813-PXC
Text: PAW3601DH-NF BUNDLES DATASHEET PAW3601DH-NF Bundles Datasheet introduction z The PAW3601DH-NF sensor along with the PNLR-00038 lens and PNDR-00004 laser diode form a complete and compact laser mouse tracking system. z High speed motion detection up to 28 inches/sec and acceleration can be up to 20g.
|
Original
|
PAW3601DH-NF
PNLR-00038
PNDR-00004
PAW3601DH-NF
PNLR-00038
I230890,
I287732
PAN3601DH
trf7903
paw3601
pan3601
mouse chip
PAW3601dh
PAW optical mouse
TRF7903-PW20
CY7C63813-PXC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Mid-IR Products Introduction Mid-Infrared Light Emitting Diodes and Photodiodes Light emitting diodes LEDs and Photodiodes (PDs) are semiconductor devices. LED or PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal
|
Original
|
|
PDF
|
TCRT5000
Abstract: dark detector application ,uses and working DC motor speed control using IC 555 and ir sensor coil gold detector circuit diagram sensor cny70 CNY70 BC178B 74HCTXX angular position sensor DC motor speed control using 555 and ir sensor
Text: Vishay Telefunken Application of Optical Reflex Sensors TCRT1000, TCRT5000, CNY70 Vishay Telefunken optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. Typical applications include: D Copying machines
|
Original
|
TCRT1000,
TCRT5000,
CNY70
74HCT14
LS393
B7474
74HCT74
TCRT5000
dark detector application ,uses and working
DC motor speed control using IC 555 and ir sensor
coil gold detector circuit diagram
sensor cny70
CNY70
BC178B
74HCTXX
angular position sensor
DC motor speed control using 555 and ir sensor
|
PDF
|
dark detector application ,uses and working
Abstract: coil gold detector circuit diagram sensor cny70 CNY70 74HCTXX BC108B transistor specification TCRT5000 Reflective Optical Sensor TCRT1000 CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC LIGHT DEPENDENT RESISTOR sensor
Text: Vishay Semiconductors Application of Optical Reflex Sensors TCRT1000, TCRT5000, CNY70 Vishay Semiconductor optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. Typical applications include: D Copying machines
|
Original
|
TCRT1000,
TCRT5000,
CNY70
74HCT14
B7474
LS393
74HCT74
dark detector application ,uses and working
coil gold detector circuit diagram
sensor cny70
CNY70
74HCTXX
BC108B transistor specification
TCRT5000
Reflective Optical Sensor TCRT1000
CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC
LIGHT DEPENDENT RESISTOR sensor
|
PDF
|
OP300
Abstract: OP600 OP640 OP224
Text: High Speed, High Power, Hermetic Infrared Emitting Diode OP224K Features: • • • • • Hermetically sealed package Mechanically and spectrally matched to other OPTEK devices Designed for direct mount to PCBoard High Modulation Bandwidth High Irradiance Power
|
Original
|
OP224K
OP224K
package20
OP300
OP600
OP640
OP224
|
PDF
|
LZ2314J
Abstract: 10X10 sharp CCD Image Sensor
Text: SHARP LZ2314J LZ2314J 1/3 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS LZ2314J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 270 000 pixels (horizontal 542 x vertical
|
OCR Scan
|
LZ2314J
LZ2314J
16-PIN
0013bb2
Q1607
0013bb3
DD13bb4
10X10
sharp CCD Image Sensor
|
PDF
|
SEG NC3
Abstract: LZ2414J LJ sharp Sharp LJ
Text: LZ2414J SHARP 1/4 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS LZ2414J is a 1/4-type 4.5 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 270 000 pixels (horizontal 542 x vertical
|
OCR Scan
|
LZ2414J
LZ2414J
16-pin
WDIP016-N-0500B)
SEG NC3
LJ sharp
Sharp LJ
|
PDF
|
LZ2324J
Abstract: No abstract text available
Text: SHARP LZ2324J 1 /3 type B/W CCD Area Sensor for CCIR DESCRIPTION PIN CONNECTIONS LZ2324J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 320 000 pixels (horizontal 542 x vertical
|
OCR Scan
|
LZ2324J
LZ2324J
16-pin
LR36683N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHARP LZ2353A 1/3 type Color CCD Area Sensor for NTSC DESCRIPTION PIN CONNECTIONS LZ2353A is a 1 /3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approximately 410 000 pixels (horizontal 811 x vertical 507), the
|
OCR Scan
|
LZ2353A
LZ2353A
|
PDF
|
|
LZ2354J
Abstract: sharp CCD Image Sensor
Text: SHARP LZ2354J LZ2354J 1/3 type B/W CCD Area Sensor for EIA PIN CONNECTIONS DESCRIPTION CCD AREA SENSORs LZ2354J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 410 000 pixels (horizontal 811 xve rtica l
|
OCR Scan
|
LZ2354J
LZ2354J
D137bti
001377D
sharp CCD Image Sensor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHARP LZ23242J 1 /3 type B/W CCD Area Sensor for CCIR DESCRIPTION LZ23242J is a 1/3-type 6.0 mm solid state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 320 000 pixels (horizontal 542 x vertical
|
OCR Scan
|
LZ23242J
LZ23242J
16-PIN
LR36683N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHARP LZ2363 LZ2363 1/3 type Color CCD Area Sensor for PAL sensor that consists of PN phote-diodes and CCDs charge-coupled devices . Having approxi mately 4 7 0 000 pixels (horizontal 795 x vertical 595), the sensor provides a high resolution stable color image.
|
OCR Scan
|
LZ2363
LZ2363
fll807Rfl
D01377A
|
PDF
|
U601
Abstract: No abstract text available
Text: SHARP LZ2313H5 1 /3 type Color CCD Area Sensor for NTSC DESCRIPTION PIN CONNECTIONS LZ2313H5 is a 1/3 -ty p e 6.0 mm solid-state im age sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 270 000 pixels (horizontal 542 x vertical
|
OCR Scan
|
LZ2313H5
LZ2313H5
16-PIN
P09ds
U601
|
PDF
|
SEG NC3
Abstract: LZ2424J
Text: SHARP LZ2424J LZ2424J 1 /4 type B/W CCD Area Sensor for CCIR DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ2424J is a 1/4-type 4.5 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 320 000 pixels (horizontal 542 x vertical
|
OCR Scan
|
LZ2424J
LZ2424J
LR36683N
SEG NC3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LZ2336 SHARP Two-power supply + 5 V and + 1 2 V operation 1 / 3 type B /W CCD A rea Sensor for EIA DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ2336 is a 1 /3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices) driven by only
|
OCR Scan
|
LZ2336
LZ2336
|
PDF
|
Sharp amplifier SM 30
Abstract: No abstract text available
Text: LZ2363 SHARP LZ2363 1 /3 type Color CCD Area Sensor for PAL DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ2363 is a 1/3-typ e 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 470 000 pixels (horizontal 795 x vertical
|
OCR Scan
|
LZ2363
LZ2363
Sharp amplifier SM 30
|
PDF
|
74HCTxx
Abstract: RT9000 dark detector application ,uses and working CAT 1527654 TCRT9000 TCRT5000 sensor circuit coil gold detector circuit diagram circuit diagram for simple IR transmitter using u report on infrared object counter D Type 37 way
Text: Temic Semiconductors. Application of Optoelectronic Reflex Sensors TCRT1000, TCRT5000, TCRT9000, CNY70 TEMIC optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. 'typical applications include: •
|
OCR Scan
|
TCRT1000,
TCRT5000,
TCRT9000,
CNY70
74HCTxx
RT9000
dark detector application ,uses and working
CAT 1527654
TCRT9000
TCRT5000 sensor circuit
coil gold detector circuit diagram
circuit diagram for simple IR transmitter using u
report on infrared object counter
D Type 37 way
|
PDF
|
pin diagram of lt 542
Abstract: No abstract text available
Text: SHARP LZ2324AK LZ2324AK 1/3 type B/W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION LZ2324AK is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approximatelyO00Opixels (horizontal 542 x ve rtica l
|
OCR Scan
|
LZ2324AK
16-PIN
LZ2324AK
approximatelyO00Opixels
013fc
DD13b
LR36683N
pin diagram of lt 542
|
PDF
|
h1b transistor
Abstract: LZ23362
Text: SHARP LZ23362 LZ23362 Two-power supply + 5 V and + 1 2 V operation 1 /3 type B /W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ23362 is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices) driven by only
|
OCR Scan
|
LZ23362
DPI372fi
h1b transistor
|
PDF
|