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    HIGH VOLTAGE DIODE 3.3KV Search Results

    HIGH VOLTAGE DIODE 3.3KV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE DIODE 3.3KV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HP STEP RECOVERY DIODES

    Abstract: cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann
    Text: CIBH Diode with Superior Soft Switching Behavior in 3.3kV Modules for Fast Switching Applications Jürgen Biermann, Infineon Technologies AG, Max-Planck-Strasse 5, D-59581 Warstein, Germany Manfred Pfaffenlehner, Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany


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    PDF D-59581 D-85579 HP STEP RECOVERY DIODES cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann

    A 3150V

    Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
    Text: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT


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    PDF 500Hz-1000Hz A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


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    PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    HIGH VOLTAGE 3.3kv mosfet

    Abstract: STR D 6601 mitsubishi electric igbt module igbt 3.3kv HIGH VOLTAGE DIODE 3.3kv HVIGBT from Mitsubishi electric 80E04 3.3kv diode IC1 4558 powerex cd
    Text: Design Approach of Newly Developed 3.3kV IGBT Modules 1 Shinichi Iura(1), John F. Donlon(2), Eckhard Thal(3) MITSUBISHI ELECTRIC, POWER DEVICE WORKS 1-1-1 Imajukuhigashi Nishi-ku Fukuoka, Japan Tel.: +81 / (92) – 805.3395 Fax: +81 / (92) – 805.3745 (2)


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    PDF com/library/content/c020311b HIGH VOLTAGE 3.3kv mosfet STR D 6601 mitsubishi electric igbt module igbt 3.3kv HIGH VOLTAGE DIODE 3.3kv HVIGBT from Mitsubishi electric 80E04 3.3kv diode IC1 4558 powerex cd

    HIGH VOLTAGE DIODE 3.3kv

    Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
    Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany


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    PDF D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv

    6.5kV IGBT

    Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
    Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany


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    PDF D-59581 D-85579 6.5kV IGBT 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode

    IEGT

    Abstract: HIGH VOLTAGE 3.3kv mosfet Brunner vertical mosfet scsoa JF-25 3.3kv diode 600V GaN mitsubishi igbt cm
    Text: IGBT Module Chip Improvements for Industrial Motor Drives John F. Donlon Katsumi Satoh Powerex, Inc. 173 Pavilion Lane Youngwood, PA USA Mitsubishi Electric Corporation Power Semiconductor Device Works Fukuoka JAPAN Abstract—Since the introduction of the IGBT module,


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    68w Transistor smd

    Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
    Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W


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    PDF HG4100 HG4516 HG4507 HG4078B SGR46G 125VAC 60VDC 150VDC 24VDC 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H

    BUSBAR calculation

    Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal


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    eupec igbt 10kv

    Abstract: Inverter Delta 6.5kV IGBT igbt 3.3kv eupec igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter eupec igbt 6.5kV thyratron DIAGRAM thyristor inverter
    Text: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 764-1153 Fax: +49 2902 764-1150 [email protected] In an effort to combine the advantages of modern high voltage IGBT chip and packaging technology


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    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


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    calculation of IGBT snubber

    Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
    Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: [email protected]


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    PDF EPE99, T0900TA52E calculation of IGBT snubber abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB

    FZ1200R33KF1

    Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv
    Text: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became


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    PDF 200V/1600V FZ1200R33KF1 FZ1200R33KF1 igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv

    6.5kV IGBT

    Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
    Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)


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    igbt spice model

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR
    Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*


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    PDF D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD94142 IRU3007 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES DESCRIPTION Provides Single Chip Solution for Vcore, GTL+, Clock Supply & 3.3V Switcher On-Board Second switcher provides simple control for the


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    PDF PD94142 IRU3007 200mA IRU3007

    Hysteresis-12V

    Abstract: 10MV1500GX 2SB772 2SD882 HIP6019 IRF3706S IRL2203NS IRU3027 IRU3027CW ir*024
    Text: Data Sheet No. PD94146 IRU3027 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH TRIPLE LDO CONTROLLER FEATURES DESCRIPTION Designed to meet VRM 9.0 specification for next generation microprocessors On-Board 5-Bit DAC programs the output voltage from 1.075V to 1.850V in 25mV steps


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    PDF PD94146 IRU3027 Hysteresis-12V 10MV1500GX 2SB772 2SD882 HIP6019 IRF3706S IRL2203NS IRU3027 IRU3027CW ir*024

    Q1/IRON POWDER

    Abstract: No abstract text available
    Text: Data Sheet No. PD94142 IRU3007 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES DESCRIPTION Provides Single Chip Solution for Vcore, GTL+, Clock Supply & 3.3V Switcher On-Board Second switcher provides simple control for the


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    PDF PD94142 IRU3007 200mA Soft-Sta93 Q1/IRON POWDER

    irf 9430

    Abstract: IRL3103D1S IRL3103S IRLR024 IRU3007 IRU3007CW MBRB1035 HIGH VOLTAGE 3.3kv mosfet 1500MF capacitor 1500MF 6.3v
    Text: Data Sheet No. PD94142 IRU3007 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES DESCRIPTION Provides Single Chip Solution for Vcore, GTL+, Clock Supply & 3.3V Switcher On-Board Second switcher provides simple control for the


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    PDF PD94142 IRU3007 200mA irf 9430 IRL3103D1S IRL3103S IRLR024 IRU3007 IRU3007CW MBRB1035 HIGH VOLTAGE 3.3kv mosfet 1500MF capacitor 1500MF 6.3v

    Untitled

    Abstract: No abstract text available
    Text: Bi direction ESD Protection Diode Data Sheet RSB6.8ZS lApplication lDimensions Unit : mm 0~0.03 1) Ultra small mold type. (GMD2) 0.19±0.03 0.6±0.05 8 lFeatures 0.38±0.03 ESD Protection 0.27±0.03 0.3±0.03 0.3±0.05 2) Bi direction. 3) High reliability


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    PDF OD962 R1102A

    1nF Y1 CAPACITOR

    Abstract: voltage transformer 3.3kv - 400v PC817 orient ef25 bobbin 12 pins EF25 bobbin zener 1v8 LXZ16VB101MF11LL SHARP PC817 ug2d equivalent SBC1-681-251
    Text: Design Example Report Title 16W Power Supply using TOP243P Input: 195Vac - 265Vac Specification Output: 1.8V/600mA, 3.3V/750mA, 5V/520mA, 12V/0.8A Application Set Top Box Author Power Integrations Applications Department Date April 20, 2005 Document Number


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    PDF OP243P 195Vac 265Vac V/600mA, V/750mA, V/520mA, DER-51 1nF Y1 CAPACITOR voltage transformer 3.3kv - 400v PC817 orient ef25 bobbin 12 pins EF25 bobbin zener 1v8 LXZ16VB101MF11LL SHARP PC817 ug2d equivalent SBC1-681-251

    PH ON 823 m 8645

    Abstract: AS1117-18 as1117-33 fz 79 1500uf as1117 L 33 LT1117-18 lm1084-33 AS1117-25 transistor marking code 12W SOT-23 Intel ATX smps circuit diagram
    Text: Designer's Manual DC-DC Power Management IC Databook www.irf.com The information presented in this DC-DC Power Management IC Databook Designer’s Manual is believed to be accurate and reliable. However, International Rectifier can assume no responsibility for its use nor any infringement of patents or other rights of third parties which


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    1287-standard

    Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
    Text: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability


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    schematic diagram Power supply 500w

    Abstract: schematic diagram 230VAC to 5VDC POWER SUPPLY R30IB "electronic measurements inc" hcr ADAPTER circuit AC TO DC 220V TO 6V in4740a R30iA wiring diagram prepaid energy meter program flow chart Automatic Load Sharing between Two or More Transf 220V DC regulated power supply
    Text: INSTRUCTION MANUAL F0 R NCR POWER SUPPLY MODEL SERIAL NO. 201 922-9300 ELECTRONIC MEASUREMENTS INC. 405 ESSEX ROAD, NEPTUNE, N.J. 07753 FIVE-YEAR WARRANTY Electronic Measurements, Inc. warrants this equipment manufactured by us and sold by us or our authorized agents to a manufacturer or


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    PDF 20-047-XXX 1QS46 schematic diagram Power supply 500w schematic diagram 230VAC to 5VDC POWER SUPPLY R30IB "electronic measurements inc" hcr ADAPTER circuit AC TO DC 220V TO 6V in4740a R30iA wiring diagram prepaid energy meter program flow chart Automatic Load Sharing between Two or More Transf 220V DC regulated power supply