IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials
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DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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HM62W8201HLJP-12
Abstract: Hitachi DSA00164
Text: HM62W8201H Series 16M High Speed SRAM 2-Mword x 8-bit ADE-203-955A (Z) Preliminary Rev. 0.1 May. 28, 1999 Description The HM62W8201H Series is an asynchronous high speed static RAM organized as 2-Mword × 8-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit
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HM62W8201H
ADE-203-955A
44-pin
36-pin
ns/12
ns/15
HM62W8201H-10
HM62W8201HJP/HLJP
HM62W8201HLJP-12
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
HM62W8127HJP/HLJP
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Untitled
Abstract: No abstract text available
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word X 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
HM62W8127HJP/HLJP
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Untitled
Abstract: No abstract text available
Text: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology
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HM624256A
262144-word
144-word
32-bit
HM624256A,
400-mil
28-pin
HM624256AP/ALP
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F31Z
Abstract: 922z
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 fim CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
8127HJP/HLJP
F31Z
922z
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Untitled
Abstract: No abstract text available
Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word X 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data
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HM5117805
152-word
ADE-203-630B
28-pin
ns/60
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Untitled
Abstract: No abstract text available
Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data
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HM5117805
152-word
ADE-203-630B
28-pin
ns/60
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Untitled
Abstract: No abstract text available
Text: HM62W4100H Series 1048576-word x 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed circuit
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HM62W4100H
1048576-word
ADE-203-774
400-mil
32-pin
ns/12
ns/15
D-85622
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asynchronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed
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HM62W1400H
4194304-word
ADE-203-773
400-mil
32-pin
ns/12
ns/15
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ZUA15
Abstract: ZUA12
Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asyncronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed circuit
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HM62W1400H
4194304-word
ADE-203-773
400-mil
32-pin
ns/12
ns/15
D-85622
ZUA15
ZUA12
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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17805T
Abstract: 51W17805 51w17805j
Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words x 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805
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HM51W17805
152-word
ADE-203-631B
152-words
28-pin
ns/60
17805T
51W17805
51w17805j
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Untitled
Abstract: No abstract text available
Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed
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HM62W4100H
ADE-203-774A
400-mil
32-pin
ns/12
ns/15
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HM629127HLJP-20
Abstract: HM629127H HM629127HJP-20 HM629127HJP-25 HM629127HLJP-25 Hitachi Scans-001
Text: HM629127H Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM629127H is an asynchronous high speed static RAM organized as 131,072-word X 9-bit. It realizes high speed access time 20/25 ns with employing 0.8 (Am CMOS process and high speed circuit designing
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HM629127H
131072-word
072-word
400-mil
32/36-pin
HM629127HLJP-20
HM629127HJP-20
HM629127HJP-25
HM629127HLJP-25
Hitachi Scans-001
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zua11
Abstract: No abstract text available
Text: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 )J.m CMOS process and high-speed circuit designing
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HM62W8511H
524288-word
ADE-203-750
512-kword
400-mil
36-pin
ns/12
ns/15
zua11
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5118160
Abstract: No abstract text available
Text: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM5118160 Series are CMOS dynamic RAMs organized as 1,048,576word x 16-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM5116160
HM5118160
1048576-word
16-bit
ADE-203-634D
576word
16-bit.
5118160
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Untitled
Abstract: No abstract text available
Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-773A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W1400H is an asynchronous high speed static RAM organized as 4-Mword X 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed
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OCR Scan
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HM62W1400H
ADE-203-773A
400-mil
32-pin
ns/12
ns/15
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PDF
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TI410
Abstract: No abstract text available
Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM 62W 16255H is an asynchronous high speed static RAM organized as 256-kword X 16-bit. It has realized high speed access tim e (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed
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HM62W16255H
256-kword
16-bit)
ADE-203-751A
16255H
16-bit.
400-mil
44-pin
TI410
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PDF
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m5118160
Abstract: m51161 S-024BB
Text: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576word X 16-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM5116160
HM5118160
1048576-word
16-bit
ADE-203-634D
576word
16-bit.
42-pin
m5118160
m51161
S-024BB
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W16255H is an asynchronous high speed static RAM organized as 256-kword x 16-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed
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OCR Scan
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HM62W16255H
256-kword
16-bit)
ADE-203-751A
16-bit.
400-mil
44-pin
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PDF
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