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    HM 6116 RAM Search Results

    HM 6116 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    6116LA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA55DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA35DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA20SOG Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, SOIC31/Tube Visit Renesas Electronics Corporation
    6116LA35TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation

    HM 6116 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L

    Untitled

    Abstract: No abstract text available
    Text: § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM C k V rsx Features • MILITARY/INDUSTRIAL : FAST A C C E SS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SU PPLY CURRENT : SO mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116L 6116/6116L

    Untitled

    Abstract: No abstract text available
    Text: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY .120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY: 2.0 (xW (TYP) DATA RETENTION : 4 (TYP)


    OCR Scan     		PDF 6116/Rev

    6116 RAM

    Abstract: 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116
    Text: Illiïü HM 6116 DATA SHEET_ 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY : 120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY : 2.0 nW (TYP) DATA RETENTION : 4 fiW (TYP)


    OCR Scan     		PDF 6116/Rev 6116 RAM 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116

    6116 block diagram

    Abstract: No abstract text available
    Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C


    OCR Scan     		PDF F12-H F0F11 6116 block diagram

    ES 61162

    Abstract: No abstract text available
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		PDF Sflbfl45b HM6116/Rev ES 61162

    6116 RAM

    Abstract: SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		PDF 6116/Rev 6116 RAM SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6

    hm6116l -70

    Abstract: 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116 SRAM 6116 6116 RAM expansion circuit HM 6116 RAM 6116 static RAM chip
    Text: _ MTE D li 5 fifc>fl45 b 0 D Q 1 3 1 Ô Q37 • i l M H S T tj^ - z .3 - /^ MATRA M H S ifllll I V r i H September 1990 HM 6116 DATA SHEET_ 2 kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESSS TIME MILITARY : 120 ns max


    OCR Scan     		PDF DG0131Ã hm6116l -70 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116 SRAM 6116 6116 RAM expansion circuit HM 6116 RAM 6116 static RAM chip

    74c920

    Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
    Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous


    OCR Scan     		PDF 256x4, HM-6508 HM-6518 HM-6551 HM-6561 74C929 74C930 74C920 HM-6504 74c920 ram 6164 6116 RAM 2116 ram 2064 ram 4016 RAM 4045 RAM 6264 cmos ram

    HM6116P-3

    Abstract: HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3
    Text: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM HM6116P S erie s •FEA TURES • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/jW typ. 10/uW (typ.) (L-version) 120ns/150ns/200ns (max.)


    OCR Scan     		PDF HM6116 2048-word 120ns/150ns/200ns HM6116P 100/jW 10/uW 200mW 175mW P-141 HM6116P-2 HM6116P-3 HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3

    8403602JA

    Abstract: 8403606JA
    Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max


    OCR Scan     		PDF HM-65162 HM-65162 8403602JA 8403606JA

    65162C

    Abstract: 8403602JA 8403606JA
    Text: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V


    OCR Scan     		PDF HM-65162 65162C 8403602JA 8403606JA

    2048x8 RAM

    Abstract: 6216 static ram
    Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec


    OCR Scan     		PDF 2048x8 S10307FDS 110ns MA6116) MA6216) 5x10s 5x1010 100pA ma6H6/6216 2048x8 RAM 6216 static ram

    M65162

    Abstract: t29 55v
    Text: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random


    OCR Scan     		PDF HM-65162/883 HM-65162/883 100kHz M65162 t29 55v

    8403602JA

    Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
    Text: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max


    OCR Scan     		PDF HM-65162 70/90ns HM-65162 T777777777A 8403602JA 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA a651

    Halbleiterbauelemente DDR

    Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
    Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)


    OCR Scan     		PDF R-1035 Halbleiterbauelemente DDR transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR

    Untitled

    Abstract: No abstract text available
    Text: HM-65162/883 S 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random


    OCR Scan     		PDF HM-65162/883 MIL-STD883 HM-65162/883

    Untitled

    Abstract: No abstract text available
    Text: m HARIRIS U U HM-6504/883 S E M I C O N D U C T O R 4096 x 1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mii-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6504/883 is a 4096 x 1 static CMOS RAM


    OCR Scan     		PDF HM-6504/883 HM-6504/883 MIL-M-38510 MIL-STD-1835, GDIP1-T18

    HM6116LP-4

    Abstract: HM6116LP3 HM6116LP-3 HM6116P-4 HM6116P-3 HM6116 hm6116 battery HM6116LP-2 HM6118 HM6116LP HM6116LP-2 HM6116LP-3
    Text: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM •FEATURES H M 6 1 1 6 P S e rie s • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/iW typ. 10juW (typ.) (L-version)


    OCR Scan     		PDF HM6116 2048-word 120ns/150ns/200ns 100/jW 10juW 200mW 175mW HM6116P-2 HM6116P-3 HM6116P-4 HM6116LP-4 HM6116LP3 HM6116LP-3 hm6116 battery HM6116LP-2 HM6118 HM6116LP HM6116LP-2 HM6116LP-3

    HA 12058

    Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
    Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION


    OCR Scan     		PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P

    Untitled

    Abstract: No abstract text available
    Text: CXK5816PN/M SONY 2K-word X 8 bit High Speed CM O S Static RAM D escription The CXK5816PN /M static RAM organized operates from a single suitable for use in high in w hich battery back Package Outline is a 1 6 ,3 8 4 bits high speed CMOS as 2 ,0 4 8 words by 8 bits and


    OCR Scan     		PDF CXK5816PN/M CXK5816PN 100jttW s/120ns/150n

    Untitled

    Abstract: No abstract text available
    Text: HM-65162 f f l H A R R IS 2048 x 8 Asynchronous CMOS Static RAM Pinouts Features D IP • Fast Access Time. 55/70/90ns Max. T O P V IE W • Low Standby Current. 50/j A Max.


    OCR Scan     		PDF HM-65162 55/70/90ns 20/yA

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR TS D É 4302271 0010714 b | T-4 6 -2 3 -12 HARRIS H M - 6 5 1 6 2 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts D IP • Fast Access Tim e. 55/70/90ns Max. T O P VIEW


    OCR Scan     		PDF M302271 T-46-23-12 HM-65162 55/70/90ns 50/iA 20/uA -550C TAVWH1221-

    Untitled

    Abstract: No abstract text available
    Text: HM-65162 33 HARRIS 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts DIP • Fast Access T im e . 55 /7 0 /9 0 n s M ax. • Low Standby C u rre n t. TO P VIEW 50piA M ax.


    OCR Scan     		PDF HM-65162 50piA