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Catalog Datasheet	MFG & Type	Document Tags	PDF
65728 Abstract: No abstract text available Text: HM 65767B MATRA MHS 16 K x 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TTL compatible and operate from single 5 V supply thus	Original	65767B 65767B 16384x1 65728	PDF
Untitled Abstract: No abstract text available Text: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL	OCR Scan	65767B 65767B 16384x1 bfl45b 00GS411	PDF
HM 65767B Abstract: 300MILS Text: Tem ic Semiconductors 16 K x 1 High Speed CMOS SRAM HM 65767B Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using	OCR Scan	65767B 65767B 16384x1 ss65W HM 65767B 300MILS	PDF
t 16 k Abstract: F01011 Text: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum	OCR Scan	65767B 16384x1 00GS411 t 16 k F01011	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET_ HM 65767B 16 K x 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME	OCR Scan	65767B 65767B GDG33T3 65767Bi	PDF
hm65767 Abstract: HM 65767B 65767B Text: HM 65767B DATA SHEET_ 16 Kx 1 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY : 110 mW (max) WIDE TEMPERATURE RANGE : - 55'C TO + 125’C	OCR Scan	65767B 16384x1 50KHzÂ HM65767B/Rev hm65767 HM 65767B	PDF
Untitled Abstract: No abstract text available Text: HM 65767B DATA SHEET 16 K x 1 HIGH SPEED CMOS SRAM FEATURES . . . FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max MILITARY: 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY: 110 mW (max) . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS	OCR Scan	65767B 65767B 16384x1 65767B/Rev	PDF