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Toshiba America Electronic Components HN2S01FUTE85LF DIODE ARRAY SCHOTT 10V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2S01FUTE85LF	Cut Tape	12,345		1	1 $0.42 10 $0.257 100 $0.42 1000 $0.10798 10000 $0.10798	Buy Now
	HN2S01FUTE85LF	Digi-Reel	12,345		1	1 $0.42 10 $0.257 100 $0.42 1000 $0.10798 10000 $0.10798	Buy Now
	HN2S01FUTE85LF	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.09103	Buy Now
Mouser Electronics	HN2S01FUTE85LF		10,600			1 $0.3 10 $0.204 100 $0.106 1000 $0.096 10000 $0.064	Buy Now
Toshiba America Electronic Components HN2S02FU(TE85L,F) DIODE ARRAY SCHOTT 40V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2S02FU(TE85L,F)	Cut Tape	2,230		1	1 $0.39 10 $0.236 100 $0.39 1000 $0.09851 10000 $0.09851	Buy Now
	HN2S02FU(TE85L,F)	Digi-Reel	2,230		1	1 $0.39 10 $0.236 100 $0.39 1000 $0.09851 10000 $0.09851	Buy Now
Mouser Electronics	HN2S02FU(TE85L,F)		2,993			1 $0.33 10 $0.209 100 $0.097 1000 $0.087 10000 $0.058	Buy Now
Chip One Stop	HN2S02FU(TE85L,F)	Cut Tape	311			1 - 10 $0.253 100 $0.157 1000 $0.157 10000 $0.157	Buy Now
EBV Elektronik	HN2S02FU(TE85L,F)			25 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN2S02JE(TE85L,F) DIODE ARRAY SCHOTT 40V 100MA ESV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2S02JE(TE85L,F)	Digi-Reel	6		1	1 $0.38 10 $0.233 100 $0.38 1000 $0.09677 10000 $0.08655	Buy Now
	HN2S02JE(TE85L,F)	Cut Tape	6		1	1 $0.38 10 $0.233 100 $0.38 1000 $0.09677 10000 $0.08655	Buy Now
Mouser Electronics	HN2S02JE(TE85L,F)		4,000			1 $0.32 10 $0.238 100 $0.114 1000 $0.092 10000 $0.055	Buy Now
Quest Components	HN2S02JE(TE85L,F)		3,200			1 $0.845 10 $0.845 100 $0.845 1000 $0.338 10000 $0.2958	Buy Now
TTI	HN2S02JE(TE85L,F)	Bulk			4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	HN2S02JE(TE85L,F)	Cut Tape	4,000			1 - 10 $0.146 100 $0.145 1000 $0.144 10000 $0.144	Buy Now
NXP Semiconductors TDA1566TH-N2S,112 IC AMP AB MONO/STER 150W 24HSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TDA1566TH-N2S,112	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors TDA1566TH-N2S,118 IC AMP AB MONO/STER 150W 24HSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TDA1566TH-N2S,118	Digi-Reel			1	1 $5.62 10 $5.62 100 $5.62 1000 $5.62 10000 $5.62	Buy Now
	TDA1566TH-N2S,118	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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HN2S Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF
HN2S01F	Toshiba	Array of Independent Diodes	Original	PDF
HN2S01F	Unknown	Silicon Diode	Scan	PDF
HN2S01F	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Scan	PDF
HN2S01FU	Toshiba	Diode, Low Voltage High Speed Switching Application	Original	PDF
HN2S01FU	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Scan	PDF
HN2S01FU	Toshiba	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF
HN2S01FU(T5L,F,T)	Toshiba	HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R	Original	PDF
HN2S01FU(TE85L,F)	Toshiba	HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R	Original	PDF
HN2S01FUTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA US6	Original	PDF
HN2S02FU	Toshiba	High Speed Switching Application	Original	PDF
HN2S02FU	Toshiba	Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: US6; Number of Pins: 6; Features: standard; Internal connection: 3 in 1; V R (V): (max 40)	Original	PDF
HN2S02FU(TE85L,F)	Toshiba America Electronic Components	SMALL-SIGNAL SCHOTTKY BARRIER DI	Original	PDF
HN2S02JE	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Original	PDF
HN2S02JE(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 100MA ESV	Original	PDF

HN2S03FE	Toshiba	Third Silicon Epitaxial Schottky Barrier Diode	Original	PDF
HN2S03FE(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA ES6	Original	PDF
HN2S03FU	Toshiba	High Speed Switching Application	Original	PDF
HN2S03FUTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA US6	Original	PDF
HN2S03T	Toshiba	Dual Silicon Epitaxial Schottky Barrier Diode	Original	PDF
HN2S03T	Toshiba	Japanese - Diodes	Original	PDF

HN2S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HN2S02JE Abstract: 2A93 Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S02JE HN2S02JE 2A93	PDF
HN2S01FU Abstract: No abstract text available Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
HN2S03FE Abstract: No abstract text available Text: HN2S03FE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FE Unit: mm High Speed Switching Applications z HN2S03FE is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FE HN2S03FE	PDF
HN2S02JE Abstract: No abstract text available Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE Unit: mm High-speed Switching Applications HN2S02JE is composed of two independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max.) Maximum Ratings (Ta = 25°C)	Original	HN2S02JE HN2S02JE	PDF
HN2S01F Abstract: No abstract text available Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
HN2S02JE Abstract: No abstract text available Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S02JE HN2S02JE	PDF
HN2S03FE Abstract: No abstract text available Text: HN2S03FE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FE Unit: mm High Speed Switching Applications z HN2S03FE is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FE HN2S03FE	PDF
HN2S03T Abstract: No abstract text available Text: HN2S03T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03T Unit: mm High Speed Switching Application 1.2±0.05 Two independent diodes are mounted on Thin Extreme Super Mini Quad package that are suitable for higher mounting densities. : IR= 0.5µA max	Original	HN2S03T HN2S03T	PDF
Untitled Abstract: No abstract text available Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Untitled Abstract: No abstract text available Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
HN2S03FE Abstract: A2 marking diode Text: HN2S03FE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FE Unit: mm High Speed Switching Applications HN2S03FE is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance	Original	HN2S03FE HN2S03FE A2 marking diode	PDF
HN2S01FU Abstract: No abstract text available Text: HN2S01FU 東芝ダイオードシリコンエピタキシャルショットキバリア形 HN2S01FU ○ 低電圧高速スイッチング用単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)	Original	HN2S01FU 100mA HN2S01FU	PDF
Untitled Abstract: No abstract text available Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Power DIODES, toshiba Abstract: HN2S01FU Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application l HN2S01FU is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C)	Original	HN2S01FU HN2S01FU Power DIODES, toshiba	PDF

HN2S03FU Abstract: marking a8 40110 application notes Text: HN2S03FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU Unit: mm High Speed Switching Application z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FU HN2S03FU marking a8 40110 application notes	PDF
HN2S03FE Abstract: No abstract text available Text: HN2S03FE 東芝ダイオードエピタキシャルショットキバリア形 HN2S03FE ○ 高速スイッチング用単位: mm z エクストリームスーパーミニ 6 端子に独立したダイオードを 3 個搭載しており超高密度実装に最適です。	Original	HN2S03FE HN2S03FE	PDF
HN2S02FU Abstract: Q2 1 P200 Text: HN2S02FU 東芝ダイオードシリコンエピタキシャルショットキバリア形 HN2S02FU ○ 超高速スイッチング用単位: mm z 独立した 3 個の SBD を搭載。 z 順方向電圧が低い。 : VF 3 = 0.54V (標準) z リーク電流が小さい。	Original	HN2S02FU 100mA HN2S02FU Q2 1 P200	PDF
HN2S01FU Abstract: No abstract text available Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic	Original	HN2S01FU HN2S01FU	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2	OCR Scan	HN2S01F HN2S01F 100mA	PDF
HN2S01F Abstract: HN2S01FU 12T1 Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0.1 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 ±0.1 : VF = 0.23V TYP. @IF = 5mA	OCR Scan	HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H • mN'm n n i F ■ mm ■ w ■ LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • • HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01F HN2S01F 100mA	PDF
HN2S01 Abstract: No abstract text available Text: TO SHIB A HN2S01FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 7 H N < ; n i F h LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0 . • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 + 0.1 -H : Vjr = 0.23V TYP. @Ip = 5mA	OCR Scan	HN2S01FU HN2S01F 100mA HN2S01	PDF
toshiba diode 3D Abstract: 015G HN2S01F Text: T O S H IB A HN2S01F T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE HN2S01F U nit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING A PPLICATIO N • HN 2S01F is composed of 3 independent diodes. • Low Forward Voltage + 0.2 2.8-0.3 +0.2 1.6 : Vjr = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01F HN2S01F toshiba diode 3D 015G	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01 HN2S01F 100mA HN2S01FU	PDF

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Toshiba America Electronic Components HN2S01FUTE85LF

Toshiba America Electronic Components HN2S02FU(TE85L,F)

Toshiba America Electronic Components HN2S02JE(TE85L,F)

NXP Semiconductors TDA1566TH-N2S,112

NXP Semiconductors TDA1566TH-N2S,118

HN2S Datasheets (23)

HN2S Datasheets Context Search

HN2S02JE

HN2S01FU

HN2S03FE

HN2S02JE

HN2S01F

HN2S02JE

HN2S03FE

HN2S03T

Untitled

Untitled

HN2S03FE

HN2S01FU

Untitled

Power DIODES, toshiba

HN2S03FU

HN2S03FE

HN2S02FU

HN2S01FU

Untitled

HN2S01F

Untitled

HN2S01

toshiba diode 3D

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