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    HN2S01F Price and Stock

    Toshiba America Electronic Components HN2S01FUTE85LF

    DIODE ARR SCHOTT 10V 100MA US6
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    DigiKey HN2S01FUTE85LF Cut Tape 12,345 1
    • 1 $0.42
    • 10 $0.257
    • 100 $0.42
    • 1000 $0.10798
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    HN2S01FUTE85LF Digi-Reel 12,345 1
    • 1 $0.42
    • 10 $0.257
    • 100 $0.42
    • 1000 $0.10798
    • 10000 $0.10798
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    HN2S01FUTE85LF Reel 9,000 3,000
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    • 10000 $0.09103
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    Mouser Electronics HN2S01FUTE85LF 10,760
    • 1 $0.3
    • 10 $0.204
    • 100 $0.106
    • 1000 $0.096
    • 10000 $0.064
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    Toshiba America Electronic Components HN2S01FU(TE85L,F)

    Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R
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    Verical HN2S01FU(TE85L,F) 1,599 255
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    • 1000 $0.1139
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    Newark HN2S01FU(TE85L,F) Cut Tape 3,000 5
    • 1 $0.312
    • 10 $0.212
    • 100 $0.157
    • 1000 $0.13
    • 10000 $0.13
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    TME HN2S01FU(TE85L,F) 3
    • 1 -
    • 10 $0.242
    • 100 $0.192
    • 1000 $0.173
    • 10000 $0.161
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    Chip1Stop HN2S01FU(TE85L,F) Cut Tape 1,599
    • 1 -
    • 10 $0.284
    • 100 $0.11
    • 1000 $0.0917
    • 10000 $0.0917
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    EBV Elektronik HN2S01FU(TE85L,F) 3,000 15 Weeks 3,000
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    New Advantage Corporation HN2S01FU(TE85L,F) 3,000 1
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    • 10000 $0.2548
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    HN2S01F Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2S01F Toshiba Array of Independent Diodes Original PDF
    HN2S01F Unknown Silicon Diode Scan PDF
    HN2S01F Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
    HN2S01FU Toshiba Diode, Low Voltage High Speed Switching Application Original PDF
    HN2S01FU Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
    HN2S01FU Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    HN2S01FU(T5L,F,T) Toshiba HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R Original PDF
    HN2S01FU(TE85L,F) Toshiba HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R Original PDF
    HN2S01FUTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA US6 Original PDF

    HN2S01F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01F

    Abstract: No abstract text available
    Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01F HN2S01F

    Untitled

    Abstract: No abstract text available
    Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01F HN2S01F

    Untitled

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU 東芝ダイオード シリコンエピタキシャルショットキバリア形 HN2S01FU ○ 低電圧高速スイッチング用 単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)


    Original     		PDF HN2S01FU 100mA HN2S01FU

    Untitled

    Abstract: No abstract text available
    Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01F HN2S01F

    Power DIODES, toshiba

    Abstract: HN2S01FU
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application l HN2S01FU is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C)


    Original     		PDF HN2S01FU HN2S01FU Power DIODES, toshiba

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01F

    Abstract: No abstract text available
    Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01F HN2S01F

    Power DIODES, toshiba

    Abstract: 015G HN2S01F
    Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF HN2S01F HN2S01F 10mstransportation Power DIODES, toshiba 015G

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01F

    Abstract: No abstract text available
    Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm l HN2S01F is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF HN2S01F HN2S01F

    Untitled

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01F

    Abstract: No abstract text available
    Text: HN2S01F 東芝ダイオード シリコンエピタキシャルショットキバリア形 HN2S01F ○ 低電圧高速スイッチング用 単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)


    Original     		PDF HN2S01F 100mA HN2S01F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2


    OCR Scan     		PDF HN2S01F HN2S01F 100mA

    HN2S01F

    Abstract: HN2S01FU 12T1
    Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0.1 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 ±0.1 : VF = 0.23V TYP. @IF = 5mA


    OCR Scan     		PDF HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H • mN'm n n i F ■ mm ■ w ■ LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • • HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V TYP. @Ijr = 5mA


    OCR Scan     		PDF HN2S01F HN2S01F 100mA

    HN2S01

    Abstract: No abstract text available
    Text: TO SHIB A HN2S01FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 7 H N < ; n i F h LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0 . • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 + 0.1 -H : Vjr = 0.23V TYP. @Ip = 5mA


    OCR Scan     		PDF HN2S01FU HN2S01F 100mA HN2S01

    toshiba diode 3D

    Abstract: 015G HN2S01F
    Text: T O S H IB A HN2S01F T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE HN2S01F U nit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING A PPLICATIO N • HN 2S01F is composed of 3 independent diodes. • Low Forward Voltage + 0.2 2.8-0.3 +0.2 1.6 : Vjr = 0.23V TYP. @Ijr = 5mA


    OCR Scan     		PDF HN2S01F HN2S01F toshiba diode 3D 015G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA


    OCR Scan     		PDF HN2S01 HN2S01F 100mA HN2S01FU

    toshiba diode 3D

    Abstract: HN2S01F
    Text: TOSHIBA HN2S01F T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING APPLICATIO N + 0.2 2 .8 - 0.3 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage + 0.2 1.6 : VF = 0.23V TYP. @IF = 5mA


    OCR Scan     		PDF HN2S01F HN2S01F toshiba diode 3D

    JP303

    Abstract: No abstract text available
    Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2


    OCR Scan     		PDF HN2S01F HN2S01F 100mA JP303

    toshiba diode 3D

    Abstract: HN2S01F HN2S01FU
    Text: TOSHIBA HN2S01 FU T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING A PPLICATIO N • • 2.1 ± 0 . HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V TYP. @Ijr = 5mA


    OCR Scan     		PDF HN2S01 HN2S01FU HN2S01F toshiba diode 3D HN2S01FU

    33P33

    Abstract: No abstract text available
    Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA


    OCR Scan     		PDF HN2S01 HN2S01F 100mA HN2S01FU 33P33