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    HN2S02JE Price and Stock

    Toshiba America Electronic Components HN2S02JE(TE85L,F)

    DIODE ARRAY SCHOTT 40V 100MA ESV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HN2S02JE(TE85L,F) Digi-Reel 6 1
    • 1 $0.38
    • 10 $0.233
    • 100 $0.38
    • 1000 $0.09677
    • 10000 $0.08655
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    HN2S02JE(TE85L,F) Cut Tape 6 1
    • 1 $0.38
    • 10 $0.233
    • 100 $0.38
    • 1000 $0.09677
    • 10000 $0.08655
    		Buy Now
    HN2S02JE(TE85L,F) Reel 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0707
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    Mouser Electronics HN2S02JE(TE85L,F) 4,000
    • 1 $0.32
    • 10 $0.238
    • 100 $0.114
    • 1000 $0.092
    • 10000 $0.055
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    Quest Components HN2S02JE(TE85L,F) 3,200
    • 1 $0.845
    • 10 $0.845
    • 100 $0.845
    • 1000 $0.338
    • 10000 $0.2958
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    TTI HN2S02JE(TE85L,F) Bulk 4,000
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    Chip One Stop HN2S02JE(TE85L,F) Cut Tape 4,000
    • 1 -
    • 10 $0.146
    • 100 $0.145
    • 1000 $0.144
    • 10000 $0.144
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    HN2S02JE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2S02JE Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    HN2S02JE(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 100MA ESV Original PDF

    HN2S02JE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HN2S02JE

    Abstract: 2A93
    Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		HN2S02JE HN2S02JE 2A93 PDF

    HN2S02JE

    Abstract: No abstract text available
    Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE Unit: mm High-speed Switching Applications HN2S02JE is composed of two independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max.) Maximum Ratings (Ta = 25°C)


    Original     		HN2S02JE HN2S02JE PDF

    HN2S02JE

    Abstract: No abstract text available
    Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		HN2S02JE HN2S02JE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		HN2S02JE HN2S02JE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE Unit: mm High Speed Switching Application HN2S02JE is composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max.) Maximum Ratings (Ta = 25°C)


    Original     		HN2S02JE HN2S02JE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm HN2S02JE is composed of two independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		HN2S02JE HN2S02JE PDF

    HN2S02JE

    Abstract: A9Q11 1Q22
    Text: HN2S02JE 東芝ダイオード シリコンエピタキシャルショットキバリア形 HN2S02JE ○ 低電圧高速スイッチング用 単位: mm z エクストリームスーパーミニ 5 端子 パッケージに独立した ダイオードを 2 個搭載しており超高密度実装に最適です。


    Original     		HN2S02JE 100mA HN2S02JE A9Q11 1Q22 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    L6703

    Abstract: ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. K36 MLB SCHEMATIC REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		ITP700FLEX L6703 ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550 PDF

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01 PDF

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B PDF

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS PDF

    smd diode Lz zener

    Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B PDF

    ISL6258

    Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE


    Original     		PDF

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A PDF

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


    Original     		3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent PDF

    5252 0.9V 1.5V led driver

    Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT
    Text: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors


    Original     		BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT PDF