2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
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Original
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2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
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PDF
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Untitled
Abstract: No abstract text available
Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)
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OCR Scan
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HN3C17FU
16GHz
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PDF
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HN3C17
Abstract: No abstract text available
Text: HN3C17F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C17F Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS 2.8 CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) + 0.2 0.3 - + 0.2 1 .6 -0 .1
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OCR Scan
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HN3C17F
16GHz
HN3C17
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PDF
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HN3C17FU
Abstract: No abstract text available
Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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HN3C17FU
HN3C17
16GHz
HN3C17FU
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PDF
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Untitled
Abstract: No abstract text available
Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)
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OCR Scan
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HN3C17FU
16GHz
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PDF
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HN3C17F
Abstract: TOSHIBA IC 2803 E33 marking
Text: TOSHIBA TENTATIVE HN3C17F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C 17F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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HN3C17F
16GHz
HN3C17F
TOSHIBA IC 2803
E33 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2 l e|2= 9.0dB (f=2GHz) 2.1 +0.1 MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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HN3C17FU
16GHz
S21el2
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PDF
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HN3C17FU
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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HN3C17FU
N3C17
16GHz
HN3C17FU
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PDF
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Silicon NPN Epitaxial Planar Type
Abstract: No abstract text available
Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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HN3C17FU
HN3C17
16GHz
Silicon NPN Epitaxial Planar Type
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PDF
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