tantalum capacitor case b avx
Abstract: AVX Tantalum Capacitance
Text: A W O R L D O F A D V A N C E D Honey, I shrunk the tantalums C O M P O N E N T S AVX is the first to deliver the industry’s smallest 0603 tantalum capacitor. The revolutionary TAC microchip packs 10 times more capacitance value than traditional tantalum technology, while reducing ESR by 3.5 times.
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F/10V.
tantalum capacitor case b avx
AVX Tantalum Capacitance
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ZENER DIODE 0.5W 3.7 V
Abstract: voltage regulation diode 8.2 v 1w Zener diode 183 39 77 zener diode Honey Technology ZM-PTZ10B ZENER DIODE 15W ZM-PTZ12B ZM-PTZ13B ZM-PTZ16B
Text: ZM-PTZ3.6B ~ ZM-PTZ36B SILICON EPITAXIAL PLANAR ZENER DIODES LL-41 Features 1 Small surface mounting type 2) 1W of power can be obtained despite compact size 3) High surge withstand level Applications 1) Voltage regulation and voltage limiting 2) Voltage surge absorption
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ZM-PTZ36B
LL-41
144X220X1
ZENER DIODE 0.5W 3.7 V
voltage regulation diode 8.2 v 1w
Zener diode 183
39 77 zener diode
Honey Technology
ZM-PTZ10B
ZENER DIODE 15W
ZM-PTZ12B
ZM-PTZ13B
ZM-PTZ16B
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MCR100
Abstract: MCR100-8 Honey Technology transistor mcr100-6 MCR100-7 MCR100-3 MCR100-4 MCR100-5 MCR100-6
Text: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM
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MCR100-3
MCR100-8
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100
MCR100-8
Honey Technology
transistor mcr100-6
MCR100-7
MCR100-3
MCR100-4
MCR100-5
MCR100-6
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Honey Technology
Abstract: carton box 1N-SS254 0092G SEMTECH LABEL SS-254 ss254 HONEY
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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1N-SS254
100mA
DO-34
50kpcs
Honey Technology
carton box
1N-SS254
0092G
SEMTECH LABEL
SS-254
ss254
HONEY
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Untitled
Abstract: No abstract text available
Text: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
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200mA
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LL700
Abstract: LL700A Honey Technology
Text: LL700, LL700A SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features • Low forward rise voltage VF and satisfactory wave • detection efficiency (η) • Small temperature coefficient of forward characteristic
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LL700,
LL700A
LL700
30MHz
000MHz.
LL700
LL700A
Honey Technology
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zener barrier
Abstract: Gems Sensors 202530 MIR-800 wave guide radar sensor Types of Radar Antenna radar level sensor MIR-900
Text: MIR-900 Series – Flexible Dual Rod Highly Repeatable Lengths to 12 Feet Tefzel Ideal Wave Guide Encapsulation for Coating/Viscous Liquids MIR-900 Series sensors handle tank depths to 12 feet, but more important for some will be the ability of this series to deliver
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MIR-900
zener barrier
Gems Sensors
202530
MIR-800
wave guide
radar sensor
Types of Radar Antenna
radar level sensor
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student
Abstract: No abstract text available
Text: mexictst.qxd 6/16/00 9:12 AM Page 1 Going Mobile Instituto Tecnológico y de Estudios Superiores de Monterrey Monterrey Tech Called “the MIT of Mexico” in the Wall Street Journal, the Monterrey Institute of Technology and Higher Education claims to be the most wired university in
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/0600/6K/MA/JM/KG/HOP
student
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sensor Flow meter PNP
Abstract: sensor DN15 npn transistor dc 558 en 175301-803 burkert s070 DD0-2 transistor 1451 "Flow Sensor" DN25 DN50
Text: 8070 Positive displacement Flow sensor for continuous flow measurement • High accuracy • Medium with high viscosity • Mounting and dismounting of the sensor head by a quarter-turn • Connection to Bürkert devices in remote versions Type 8070 can be combined with.
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erni 32 pins connector
Abstract: erni minibridge 1.27 connectors M12 connector PCB AWG30 ITS 7166 erni smc
Text: New Products 2009 On the right track. www.erni.com With ERNI, you’re heading in the right direction. You set the pace. You know the feeling: When your navigation system tells you to turn around or your passenger has the map in his or her head, you have no time to look at
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Qwik Connect
Abstract: No abstract text available
Text: Qwik Connect GLENAIR n o c t o b er 2010 VOLUME 14 n NUMBER 4 Electronica 2010 New Product Launch Extravaganza QwikConnect Electronica 2010, Munich, Germany New Product Launch Extravaganza Why CHOOSE Glenair? W illkommen! Glenair has a long history of interconnect system product innovation. We designed and
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October 2010 QwikConnect
Abstract: No abstract text available
Text: Qwik Connect GLENAIR n OCTOBER 2010 VOLUME 14 n NUMBER 4 Electronica 2010 New Product Launch Extravaganza QwikConnect Electronica 2010, Munich, Germany New Product Launch Extravaganza W illkommen! Glenair has a long history of interconnect system product innovation. We designed and
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WP_001 Connecting Peripherals to an Android Platform
Abstract: Android
Text: White Paper WP_001 Connecting Peripherals to an Android Platform Version 1.0 Issue Date: 2012-02-09 This white paper will describe some of the options for connecting peripheral accessories to Android OS based tablets/phones. The main focus will be the use of the Android Open Accessory Initiative.
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Untitled
Abstract: No abstract text available
Text: MSS1Û7S GÜG1D12 flSb « H 0 N 3 b3E D Honeywell HONEYùlELL/S S E C Advance Information 64K X 16 RADIATION-HARDENED SRAM HC81610 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Full military temperature operation -55°C to 125°C
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G1D12
HC81610
1x101
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Untitled
Abstract: No abstract text available
Text: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02
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HC6464
24-Pin
1x10s
1x101
PIN23
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t4423
Abstract: No abstract text available
Text: HONEY WEL L DIGITAL PRODUCT hb D E j MSS14S3 OQOOOlfl 0 T-44-23' S AUGUST 1985 16K x 1 STATIC RAM HC6167R PRODUCT DESCRIPTION FEATURES The HC6167R is a 16,384-word by 1-bit static Random Access Memory RAM designed for strategic and tactical military applications. The HC6167R is fabricated
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MSS14S3
T-44-23'
HC6167R
384-word
110-ns
20-pin
HC6167R
t4423
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HR2340
Abstract: sram pull down honeywell memory sram
Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec
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1x106
1x103rad
1x1012rad
HR2340
HR2340
sram pull down
honeywell memory sram
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harris 6616
Abstract: No abstract text available
Text: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02
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HC6616
1x106
1x109
1x101
24-Lead
HC6616/1
pin21
HC6616/2
harris 6616
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Untitled
Abstract: No abstract text available
Text: HONEYÜI ELL/ S S E C 3ÖE D D 4SS1Ô72 GQOOSSfl 1 HH0N3 Advance Information 16K x 1 MAGNETORESISTIVE RAM MRAM T ^ fc -^ -O S T FEATURES Non-volatile 250 ¡as Read Cycle Time Fabricated with RICMOS 1.2 |am Process 400 ns Write Cycle Time Write Cycles in Excess of 1x1015
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1x101
1x10e
1x1014c
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HM3500
Abstract: No abstract text available
Text: HONEYüJELL D I G I T A L P R O D U C T bt De | 4 S S m S 3 □□0DD73 7 | T-42-11-15 MAY 1985 HM3500 ECL/TTL GATE ARRAY PRELIMINARY PRODUCT DESCRIPTION The HM3500 Figure 1 is a 400 picosecond, 3500 equivalent gate density VLSI monolithic integrated circuit using Honeywell’s ADB-II fabrication process.
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0DD73
T-42-11-15
HM3500
10K/KH
HM3500
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Untitled
Abstract: No abstract text available
Text: b3E D • Honeywell 4 S 5 1 Û 7 2 G Q D 1 1 G 1 151 « H O N B MAGNETIC FIELD SENSORS honeyüiell / s s e c DESCRIPTION SSEC permalloy magnetic field sensors provide an unmatched ability to trade off size, power consumption, and sensitivity. They are fabricated by depositing a thin film of nickel-iron onto a silicon substrate which can have a simple
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HBSA220)
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Honey Technology
Abstract: MCL245 55199
Text: MCL245 SILICON EPITAXIAL PLANAR DIODE Absolute Maximum Ratings Ta= 25°C Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage V rm 250 V Mean Rectified Current lo 200 mA Maximum Forward Current Ifm 625 mA Surge Forward Current at t<1s and Tj= 25°C
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MCL245
200mA
22lectrodes
100uA
1996-MWtGOfivA
Honey Technology
MCL245
55199
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BZT33
Abstract: Bzt30 BZT200 BZT36
Text: BZT2.0 . BZT200 Silicon Planar Zener Diodes in Mini Melf case especially for automatic insertion. The Zener voltages are graded according to the international E24 standard. Other tolerance, non standard and higher Zener voltages upon request. These diodes are delivered
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BZT200
BZT91
BZT100
BZT110
BZT120
BZT130
BZT150
BZT160
BZT180
BZT200
BZT33
Bzt30
BZT36
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DIODE 1N34A Reverse resistance
Abstract: diodes 1N34A DIODE 1N34A 1n34a germanium diode 1n34a diode 1N34A diode germanium 1N34A germanium point contact diode n34a Honey Technology
Text: 1N34A POINT CONTACT GERMANIUM DIODE The germanium point contact Ge diodes are widely used For detecting the rectifying efficiency or for switching on the radio, TV, or stereo, ect. max. 03. 2 L Features • High reliability for resistance to vibration and shock proof.
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1N34A
1N34A)
40MHz
DIODE 1N34A Reverse resistance
diodes 1N34A
DIODE 1N34A
1n34a germanium diode
1n34a diode
1N34A
diode germanium 1N34A
germanium point contact diode
n34a
Honey Technology
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