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    HONEYWELL SOI CMOS Search Results

    HONEYWELL SOI CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    HONEYWELL SOI CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HX2080

    Abstract: HX2160 HX2000 HX2040 HX2300 rad asic
    Text: RICMOS SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates Raw


    Original     		PDF HX2000 HX2000r HX2000 HX2000r 1x106 1x1010 HX2000* 1x109 HX2080 HX2160 HX2040 HX2300 rad asic

    HX2000

    Abstract: HX2040 HX2080 HX2160 HX2300 military IMU
    Text: RICMOS SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000 – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates Raw


    Original     		PDF HX2000 HX2000r HX2000 HX2000r 1x106 1x1010 HX2000* 1x109 HX2040 HX2080 HX2160 HX2300 military IMU

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Hone8295

    HX6228

    Abstract: honeywell memory sram
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Honeywe-8295 HX6228 honeywell memory sram

    honeywell hx3000

    Abstract: HX306G HX311G HX303G HX3000 HX314G
    Text: HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 µm Leff RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Array Sizes to 1M Usable Gates • Total Dose Hardness ≥3x105 rad(SiO2 )


    Original     		PDF HX3000 3x105 1x106 1x10-10 honeywell hx3000 HX306G HX311G HX303G HX3000 HX314G

    honeywell hx3000

    Abstract: HX3000
    Text: HIGH PERFORMANCE SOI-V GATE ARRAYS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened TM 0.30µm Leff RICMOS Silicon On Insulator (SOI-V) process Array Sizes to 1.0M Usable Gates 3.3V or 2.5V Core Operation


    Original     		PDF HX3000 honeywell hx3000 HX3000

    honeywell SOI CMOS

    Abstract: HLX2000 Silicon on insulator SRAM HLX2015 HLX2060 HLX2120 HLX2240 HLX2450
    Text: RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 µmLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing


    Original     		PDF HLX2000 1x10-9 1x106 HLX2000 honeywell SOI CMOS Silicon on insulator SRAM HLX2015 HLX2060 HLX2120 HLX2240 HLX2450

    HLX2000

    Abstract: HLX2015 HLX2060 HLX2120 HLX2240 HLX2450 Silicon on insulator SRAM honeywell SOI CMOS
    Text: RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 µmLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing


    Original     		PDF HLX2000 1x10-9 1x106 HLX2000 HLX2015 HLX2060 HLX2120 HLX2240 HLX2450 Silicon on insulator SRAM honeywell SOI CMOS

    Untitled

    Abstract: No abstract text available
    Text: Honeywell RICMOS SOI GATE ARRAYS HX2000 HX2000r FEATURES FAMILY • Fabricated on Honeywell’s Radiation Hardened - 0.65 nm Leff RICMOS™ IV SOI Process, HX2000 - 0.55 nm Leff RICMOS™ IV SOI Process, HX2000r • Array Sizes from 40K to 390K Available Gates Raw


    OCR Scan     		PDF HX2000 HX2000r HX2000 HX2000r 1x106 1x1010rad HX2000*

    honeywell SOI CMOS

    Abstract: No abstract text available
    Text: Honeywell Preliminary RICMOS " — LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Total Dose Hardness of >1x106 rad S i02 • Fabricated on Honeywell’s Radiation Hardened 0.55 |im RICMOS IV SOI Process


    OCR Scan     		PDF HLX2000 1x106 1x109rad 1x109Errors/Bit-Day 1x101 honeywell SOI CMOS

    HX3800

    Abstract: hx3400 HX-340
    Text: Honeywell Preliminary HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 |im RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Total Dose Hardness >3x106 rad(SiOg)* • Array Sizes to 925K Usable Gates


    OCR Scan     		PDF 3x106 HX3000 211RevC HX3800 hx3400 HX-340

    honeywell SOI CMOS

    Abstract: HLX2000 HLX2015 HLX2060 HLX2120 HLX2240 HLX2450 HLX2600 Silicon on insulator SRAM 900170
    Text: Honeywell RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 ^mLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing


    OCR Scan     		PDF HLX2000 HLX2000 honeywell SOI CMOS HLX2015 HLX2060 HLX2120 HLX2240 HLX2450 HLX2600 Silicon on insulator SRAM 900170

    HX2160

    Abstract: No abstract text available
    Text: Honeywell HX2000 RICMOS" — SOI GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm R IC M O S IV SOI Process • Total Dose Hardness of >1x106 rad S i02 • Array Sizes from 10K to 336K Available Gates (Raw) Dose Rate Upset Hardness: >1x10'°rad(Si)/sec (5V)


    OCR Scan     		PDF 1x106 1x109 HX2000 HX2160

    HX6856

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES OTHER RADIATION • Full Military Temperature Operation -55°C to125°C Fabricated with RICMOS” Silicon on Insulator (SOI) 0.7 |im Process • Access Time < 25 ns


    OCR Scan     		PDF HX6828 1x106 1x101 1x1012rad to125 40-Lead HX6856

    Untitled

    Abstract: No abstract text available
    Text: b3E D MSS1Ö72 ÜDDlQQb SS2 « H O N S Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES O THER RADIATION Fabricated with RICM OS Silicon on Insulator SOI 1.2 (o.m Process - Latchup Free Total Dose Hardness through


    OCR Scan     		PDF HX6664 1x107 1x101

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6256 1x109 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6228 1x106 1x101 1x109 0014flb 6C634

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6228 1x101 1x109 32-Lead

    HX6856

    Abstract: ceramic insulator high voltage Honeywell Capacitors
    Text: Honeywell Military Products Advance Informatio i 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES OTHER RADIATION • Full Military Temperature Operation -55°C to 125°C Fabricated with RICMOS Silicon on Insulator (SOI) 0.7 nm Process • Access Time s 25 ns


    OCR Scan     		PDF HX6828 1x101 -40-Lead B-40-Lead HX6856 ceramic insulator high voltage Honeywell Capacitors

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 nm Process Total Dose Hardness through 1x106 rad(Si02) • Full military temperature operation (-55°C to 125°C)


    OCR Scan     		PDF 1x106 1x101' 10upsets/bit-day HX6364

    DQ4-21

    Abstract: No abstract text available
    Text: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process


    OCR Scan     		PDF 1x10s HX6364 DQ4-21

    Transistors smd A7H

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10erad 1x101 HLX6228 32-Lead Transistors smd A7H

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)


    OCR Scan     		PDF HX6256 1x10erad 1x101 1x109 28-Lead 28-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HLX6228 32-Lead