HP-214B
Abstract: nanosecond pulse generator AN1335 tepro VN2222L equivalent "FET based feedback" gain control amplifier AN1331 VN2222L fet probe service manual AN-1331
Text: Application Note 133 October 2011 A Closed-Loop, Wideband, 100A Active Load Brute Force Marries Controlled Speed Jim Williams Introduction Digital systems, particularly microprocessors, furnish transient loads in the 100A range that a voltage regulator must service. Ideally, regulator output is invariant during
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500kHz
an133f
AN133-11
AN133-12
HP-214B
nanosecond pulse generator
AN1335
tepro
VN2222L equivalent
"FET based feedback" gain control amplifier
AN1331
VN2222L
fet probe service manual
AN-1331
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C8808
Abstract: DDD0304 IRF221 T-39 A2TE
Text: it9 . 8 3 68 60 2 S O L I T RO N D EV IC ES INC - bl M *• DE | Û3bôb0a DDG0304 o' § 0 l i t r 0 n H_ T-39^11 SFÜ204B3 . D E V I C E S . IN C. POWER IV30S DEVICE 1 5 0 V /5 A N Channel, TO-3 Package, IRF221 equivalent
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DDD0304
50V/5A)
IRF221
HP214A
F/450V
C8808
T-39
A2TE
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100Cr6
Abstract: BYT30-200
Text: S G S-THGMSON S^C D 1 -7 ^ 59C O T H O M S O N -C S F 2 3 ? GGG2151 D Y' 02151 B Y T 30 - 200 — 400, R DIVISION SEM ICO N D U CTEU RS DISCRETS FAST RECOVERY RECTIFIER REDRESSEUR RAPIDE ADVANCE INFORMATION ~\ / > V r r m 200 to 400 V •f(AV) 3 0 A « t T c8ta 90 °C
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GGG2151
CB-34)
CB-425)
CB-262)
CB-262
i0840
CB-19)
CB-428)
CB-244
100Cr6
BYT30-200
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SFN402A3
Abstract: IRF320
Text: '^ 8 3 6 8 6 0 2 SOLITRON DEVICES INC DE J fl3tflbG2 □ □ □ 0 3 D S ô q T-39-11 smoua B o ü tro n D E V I C E S , I NC. / POWER MOS DEVICE 400V/3A N Channel, TO-3 Package, IRF320 Equivalent The new Solitron Power MOS technology combines the efficient
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T-39-11
00V/3A)
IRF320
SFN402A3
HP214A
flF/450V
SFN402A3
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SFN402B3
Abstract: IRF321 HP-214A
Text: f i 11—i • 8 3 6 8 6 0 2 SO L IT R O N D E V IC E S , , . 11. IN C b l DE | _ fl3 h ô b O E DD 0D 31S □ | Dr T-3 9 -1 1 _ S o ls f r o h SFN _ DEVICES, INC. POWER IV30S DEVICE 350V/3A N Channel, TO-3 Package, IRF321 Equivalent The
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T-39-11
SFN402B3
IV30S
50V/3A)
IRF321
hp214a
s0j1f/450v
SFN402B3
HP-214A
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BYT30-200
Abstract: 100-C rm 76
Text: S G S-THGMSON S^C D 1 - 7 ^ 2 3 ? 59C 02151 O THOMSON-CSF GGG2151 S | D Y' BYT 30 - 200 —400, R DIVISION SEMICONDUCTEURS DISCRETS FAST RECOVERY RECTIFIER REDRESSEUR RAPIDE ADVANCE INFORMATION ~ \ / > V r r m 200 to 400 V •f(AV) 3 0 A « t T c8ta 90 °C
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GGG2151
CB-34)
BYT30-200
100-C
rm 76
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sfn106a9
Abstract: No abstract text available
Text: 8368602 § SOL ITRQN l i t r 0 n - D E V IC E S , INC. D E V IC ES INC kl PE [ f l 3 b f l i3D5 □□□□350 ^ _ | T-39-09 SFN106A9 POWER MOS DEVICE 100V/6A N Channel, TO-39 Package, IRFF120 Equivalent The new Solitron Power MOS technology combines the efficient
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T-39-09
00V/6A)
IRFF120
SFN106A9
F/450V
HP214A
sfn106a9
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varo diode
Abstract: H1812 varo semiconductor h1812 diode Varo integrated rectifiers Varo Semiconductor high voltage diode h1812 VARO Varo Semiconductor diode TV flyback transformer sy 171
Text: VARO 2UALITY vy VARO "50 d F | ^ 1 4 4 B 3 3 3 _ 0 D 0 D cì 27 V A R O S E M I C O N D U C T O R , INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214 271-8511 T W X 910-860-5178 High Voltage Diode H1812 Designed for B & W TV High Voltage Rectifier up to
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H1812
I--63
BP214A
P6042
varo diode
H1812
varo semiconductor
h1812 diode
Varo integrated rectifiers
Varo Semiconductor high voltage diode h1812
VARO
Varo Semiconductor diode
TV flyback transformer
sy 171
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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BU105
Abstract: LG flyback MJ105 k535 transistor BU 110 flyback transformer lg Lg flyback transformer 18 pulse drive allen bradley bu 105 Transistor W03
Text: MJ105 S ILIC O N BU105 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S . . . designed for use in line operated black and w hite (19 and 20 inch 1 1 0 ° deflection circuits) or color (11 and 14 inch 9 0 ° deflection circuits) television receivers.
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MJ105
BU105
BUI05
MJ105,
bu105
mj105
LG flyback
k535
transistor BU 110
flyback transformer lg
Lg flyback transformer
18 pulse drive allen bradley
bu 105
Transistor W03
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rg3j 005
Abstract: 4948 1N5626 HP214A HP-214A
Text: G P R 3A GLASS AMP II 3A Toper ~ 65" + 175 C T.t r K,! 300 C Type Types Typen G 3A G 3B G 3D G 3G G 3J G 3K G 3M lo V rrm (V) (1N 5624) (1N 5625) (1N5626) (1N 5627) 50 100 200 400 600 800 1000 FAST RECOVERY-GPR Topor = - 6 5 ° + 175 C — RG 1A RG 1B RG 1D
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1N5626)
HP-214A
rg3j 005
4948
1N5626
HP214A
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N25U
Abstract: 7b92a AMs03 BM-7A GDGE173 GSDS50018 GSDS50020 QQG2174 TWX910-950-1942
Text: í SÛUARE D CO/ D GE NE RA L 3918590 G EN ERAL ^ • □005175 95 D SEM IC O N D U C TO R General Sem iœ nductor Industries,Inc. ^ ÛSE550Ô 1 0 U B H E T Ì COMPANY 1 02172 D NPN 180, 200 V. 50 Amp Switching G S D S 5 0 0 1 8 , 20 C 2R c2r ®high speed / high power switching transistors
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TWX910-950-1942
N25U
7b92a
AMs03
BM-7A
GDGE173
GSDS50018
GSDS50020
QQG2174
TWX910-950-1942
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varo diode
Abstract: High Voltage Multipliers VARO varo semiconductor Varo Semiconductor diode P6042 VARO varo tripler HP-214A diode varo vf 30
Text: VARO DUALITY vy SO T443333 0000^55 VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 214 271-8511 TWX 910-860-5178 VARO High Voltage Glass Diodes El H1701 If(AV) Tj Tc T st g ELECTRICAL C H A R A C T E R IS E S (At T a = 25°C unless otherwise noted)
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H1701
HP214A
P6042
varo diode
High Voltage Multipliers VARO
varo semiconductor
Varo Semiconductor diode
VARO
varo tripler
HP-214A
diode varo vf 30
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IRFF122
Abstract: ANA1-20
Text: 8 368602 SOL ITRON DEVICES INC hi fl3bflb DS DD0D2flfl fc, | S o litro n _ T-39-09 SFN10GC9 D E V I C E S , IIMC. POWER MOS DEVICE 1 0 0 V /5 A N Channel, TO-39 Package, IRFF122 Equivalent The new Solitron Power MOS technology combines the
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T-39-09
00V/5A)
IRFF122
HP214A
ANA1-20
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N06A
Abstract: IRFF123 ANA1-20 OV60 MH110
Text: 8368602 * S OLITRON D EV ICES olltron D E V I C E S , IN g bl f i B b A bO a □ 0 0 D H ,:i2 ô JV T-39-09 _ SFM Ü I N C . POWER IVSOS DEVICE 60V/5A N Channel, TO-39 Package, IRFF123 Equivalent The new Solitron Power MOS technology combines îhe efficient
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t-39-09
IRFF123
HP214A
F/450V
N06A
ANA1-20
OV60
MH110
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